| Patent application number | Description | Published |
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| 20090008660 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 01-08-2009 |
| 20090206333 | ZnO BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure. | 08-20-2009 |
| 20090236598 | ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer. | 09-24-2009 |
| 20090272972 | ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO | 11-05-2009 |
| 20090294758 | ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO. | 12-03-2009 |
| 20110084275 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 04-14-2011 |
| Patent application number | Description | Published |
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| 20100181550 | Manufacture method for ZnO based semiconductor crystal and light emitting device using same - A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. | 07-22-2010 |
| 20110084299 | LED LIGHT SOURCE AND MANUFACTURING METHOD FOR THE SAME - An LED light source can include protection members to protect bonding wires. The LED can include a substrate including electrode patterns, a sub mount substrate located on the substrate, at least one flip LED chip mounted on the sub mount substrate and a phosphor rein covering the LED chip. The bonding wires can connect each of the electrode patterns to conductor patterns connecting to electrodes of the LED chip. The protection members can be located so as to surround both sides of the bonding wires. In addition, because each height of the protection members is higher than each maximum height of the bonding wires and is lower than a height of the phosphor resin, the protection members can protect the bonding wires from external pressure while the light flux is not reduced. Thus, the disclosed subject matter can provide a reliable LED light source having a favorable light distribution. | 04-14-2011 |
| 20110116271 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - In the production of a light emitting device, in which a plurality of light emitting element parts carrying LED elements are formed on a substrate, and the substrate is diced, generation of shaving dusts is suppressed at the time of the dicing, and breakage of the substrate during the production process can be prevented. In the process of forming a slit crossing a region for forming a light emitting element part in a metal substrate, a recess which serves as a resin reservoir can be formed so as to cross the slit. The slit can be filled with an insulating material, the recess can be filled with a resin, and they both can be cured. A light emitting element part can be formed in the region for forming the light emitting element part, the metal substrate can be cut into units comprising one or a plurality of the light emitting element parts, and can be mounted on a printed circuit board on which a pattern is formed. | 05-19-2011 |
| 20110133236 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the light emitting device, a light emitting element is carried on a substrate, and a resin covers the light emitting element. An anisotropic heat conduction material showing a heat conductivity for the substrate main plane direction larger than that for the substrate thickness direction is carried on the substrate. A side of the anisotropic heat conduction material contacts with the resin. Thereby, the anisotropic heat conduction material can receive heat of the resin, conduct it along the main plane direction, and radiate it to the substrate at a position remote from the light emitting element and/or the resin. As the anisotropic heat conduction material, for example, one or more laminated layers of graphite in the form of sheet are used. | 06-09-2011 |
