| Patent application number | Description | Published |
|---|
| 20090078942 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate. | 03-26-2009 |
| 20100081243 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, includes forming a gate oxide film on an SiC region by a first thermal oxidation treatment in a first oxidizing atmosphere, performing a second thermal oxidation treatment at an oxidation speed of at most 5 nm/hour in a second oxidizing atmosphere having a lower oxygen concentration than the first oxidizing atmosphere, to increase film thickness of the gate oxide film, after the first thermal oxidation treatment, and forming a gate electrode on the gate oxide film with the increased film thickness. | 04-01-2010 |
| 20100308343 | SILICON CARBIDE SEMICONDUCTOR DEVICE - According to the embodiment, a semiconductor device includes an SiC substrate of a first or second conductivity type. An SiC layer of the first conductivity type is formed on a front surface of the substrate, a first SiC region of the second conductivity type is formed on the SiC layer, a second SiC region of the first conductivity type is formed within a surface of the first SiC region, a gate dielectric is continuously formed on the SiC layer, the second SiC region, and the surface of the first SiC region interposed between the SiC layer and the second SiC region, a gate electrode is formed on the gate dielectric, a first electrode is embedded in a trench selectively formed in a part where the first SiC region adjoins the second SiC region, and a second electrode is formed on a back surface of the substrate. | 12-09-2010 |
| Patent application number | Description | Published |
|---|
| 20090012669 | Vehicle Control Device - A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a side slip angle and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied. This arrangement makes it possible to properly control a motion of an actual vehicle to a desired motion while properly considering the characteristics of a road surface reaction force acting from a road surface on a wheel. | 01-08-2009 |
| 20090024293 | Vehicle Control Device - An actual vehicle actuator operation control input and a model operation control input are determined by an FB distribution law such that the difference between a reference state amount determined in a vehicle model and an actual state amount of an actual vehicle approximates zero, and then an actuator device of the actual vehicle and the vehicle model are operated on the basis of the control inputs. The value of a parameter of the vehicle model is set according to an actual vehicle motional state such that the attenuation property of a reference state amount when a drive manipulated variable is changed is higher than the attenuation property of an actual state amount. Accordingly, the actual vehicle actuator device is properly controlled independently of an actual vehicle motional state such that a state amount related to an actual vehicle motion approximates a vehicle state amount on a dynamic characteristic model. | 01-22-2009 |
| 20090118905 | VEHICLE CONTROL DEVICE - A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law based on a difference between a reference state amount determined by a vehicle model and an actual state amount of an actual vehicle such that the state amount error is approximated to zero, and then an actuator device of the actual vehicle and the model vehicle are operated based on the control inputs. The FB distribution law determines a control input for operating the model such that a state amount error is approximated to zero while restraining a predetermined restriction object amount from deviating from a permissible range. A vehicle control device capable of enhancing robustness against disturbance factors or their changes while performing operation control of actuators that is as suited to behaviors of an actual vehicle as possible is provided. | 05-07-2009 |
| 20090132137 | CONTROLLER OF VEHICLE - A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a road surface reaction force and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied. This arrangement makes it possible to properly control a motion of an actual vehicle to a desired motion while properly considering the characteristics of a road surface reaction force acting from a road surface on a wheel. | 05-21-2009 |
| 20090171526 | Vehicle Control Device - A basic required manipulated variable Mfbdmd_a is determined on the basis of a state amount error, which is the difference between a state amount of a motion of an actual vehicle | 07-02-2009 |
| 20090187302 | VEHICLE CONTROL DEVICE - A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law | 07-23-2009 |
| 20090319114 | VEHICLE CONTROL DEVICE - An FB distribution rule | 12-24-2009 |
