| Patent application number | Description | Published |
|---|
| 20090001436 | Memory device - Disclosed is a memory device having a transistor, the transistor including a substrate; a gate electrode formed on the substrate; an insulation layer formed on the gate electrode, the gate electrode and the insulation layer forming a convex portion; a conductive layer formed at a top of the convex portion; a source electrode formed on one side of the convex portion on the substrate; a drain electrode formed on the other side of the convex portion on the substrate where the source electrode is not formed; and a semiconductor layer formed on the insulation layer existing between the conductive layer and the source electrode and between the conductive layer and the drain electrode. | 01-01-2009 |
| 20090022346 | A HEARING AID ADJUSTER - [Problems] To easily associate the parameters representing the acoustic characteristic of a hearing aid with the audibility of the hearing aid user, shorten the time for adjusting the hearing aid, and improve the accuracy of the adjustment of the parameter. | 01-22-2009 |
| 20090185703 | HEARING AID ADJUSTING APPARATUS, HEARING AID, AND PROGRAM - A hearing aid adjusting apparatus for making adjustment so that duplication, movement, etc. of surrounding setting can easily be changed on software is provided. | 07-23-2009 |
| 20090256157 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE - A display device includes a first substrate on which a semiconductor circuit is formed. A second substrate is disposed over the first substrate to include a first electrode formed on a first surface to perform image displaying, and a second electrode exposed to a second surface and bonded to the first electrode via a contact hole. A third substrate is disposed over the second substrate to include a third electrode formed to perform image displaying in association with the first electrode of the second substrate. An image displaying layer is disposed between the second substrate and the third substrate to perform image displaying. An electrode on a surface of the first substrate on which the semiconductor circuit is formed is electrically connected to the second electrode exposed to the second surface of the second substrate. | 10-15-2009 |
| 20100092016 | BEHIND-THE-EAR HEARING AID WHOSE MICROPHONE IS SET IN AN ENTRANCE OF EAR CANAL - There is provided a behind-the-ear hearing aid that makes it easy for a hearing aid wearer to estimate a position of a sound source with respect to a front-back direction and that enables an increase in aesthetic property when the hearing aid is worn. A behind-the-ear hearing aid of the present invention is used while fitted to an ear of a human body, and includes at least a microphone | 04-15-2010 |
| 20100164918 | ELECTRONIC ELEMENT, CURRENT CONTROL DEVICE, ARITHMETIC DEVICE, AND DISPLAY DEVICE - A disclosed electronic element includes: a substrate; a first electrode layer formed on a portion of the substrate; an insulating layer formed on the first electrode layer; a conductive layer formed on the insulating layer formed on an area where the first electrode layer is formed; a second electrode layer formed on one area where the first electrode layer on the substrate is not formed; a third electrode layer formed on the other area where neither the first electrode layer on the substrate nor the second electrode layer is formed; and a semiconductor layer formed so as to cover between the conductive layer and the second electrode layer and to cover between the conductive layer and the third electrode layer. | 07-01-2010 |
| 20110019848 | HEARING AID AND METHOD OF CONTROLLING VOLUME OF HEARING AID - A hearing aid ( | 01-27-2011 |
| 20110128275 | FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM - A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer. | 06-02-2011 |
