Patent application number | Description | Published |
20090087772 | DEVELOPER, IMAGE FORMING METHOD AND IMAGE FORMING APPARATUS - A yellow toner, a magenta toner and a cyan toner, which are used for forming a color image, each contain a yellow pigment having an average dispersed diameter d | 04-02-2009 |
20090233201 | DEVELOPER AND IMAGE FORMING APPARATUS - A developer to be used in an image forming apparatus has a carrier and a toner containing a colorant, a binder resin, a release agent, a charge controlling agent containing Al and Mg, and a conductive inorganic oxide having an intrinsic resistivity of from 1.0×10 | 09-17-2009 |
20090258307 | DEVELOPER AND IMAGE FORMING APPARATUS - A developer used in an image forming apparatus, the developer containing: a toner, and a carrier that charges the toner, the toner containing a core toner, and an external additive that is added to a surface of the core toner, the core toner containing a colorant, a binder resin, a releasing agent, and a charge controlling agent containing Al and Mg, an amount of the charge controlling agent on the surface of the core toner being from 0.2 to 4.0 cps/eV in terms of a Mg amount measured by EDX, the core toner having a circularity of from 0.880 to 0.930, the external additive having a primary particle diameter of from 70 to 200 nm, an amount of the external additive being from 0.2 to 3.0% by weight based on the core toner. | 10-15-2009 |
20100032754 | Semiconductor device and method of manufacturing the semiconductor device - A semiconductor device includes: a high withstanding voltage transistor ( | 02-11-2010 |
20100124714 | DEVELOPING AGENT, IMAGE FORMING APPARATUS, AND IMAGE FORMING METHOD - A developing agent is used for a recycle type image forming apparatus including an image bearing body on which an electrostatic latent image is developed with the developing agent and an image transferred to a transfer medium is formed, and includes a toner particle, a magnetic carrier to charge the toner particle to a specified polarity, and a circulation agent which is charged to a polarity reverse to that of the toner particle in the developing agent, has a primary particle diameter of 20 to 100 μm, has a magnetization lower than that of the magnetic carrier, and has a transfer efficiency of 0 to 10% from the image bearing body to the transfer medium. | 05-20-2010 |
20100327345 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor with a substrate on which source and drain regions, both of a first conductivity type, and a channel region of a second conductivity type between the source and drain are formed, and a gate electrode formed in the channel region to bury a trench formed so the depth thereof changes intermittently in the width direction of the gate. In the channel region, each on a surface of the substrate and in a bottom portion of the trench, there are formed a second high-concentration region and a first high-concentration region, and the dopant concentration of the second conductivity type is higher than the dopant concentration of the second conductivity type in portions sideward from the trench. The dopant concentration of the second conductivity type in the first high-concentration region is higher than the dopant concentration of the second conductivity type in the second high-concentration region. | 12-30-2010 |
20110068391 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME - A trench gate transistor whose gate changes depth intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The first offset region and the second offset region are shallower where they contact the device isolation film than is the device isolation film in those areas. The first and second offset regions nevertheless extend below the bottom of the trench. | 03-24-2011 |
20110068394 | SEMICONDUCTOR DEVICE - A trench gate transistor whose gate changes the depth thereof intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The sum of length measurements of the underlying portion of the second offset region measured from the lower corner of the trench in a direction parallel to the substrate and in a direction perpendicular to the substrate is 0.1 μm or greater. | 03-24-2011 |
20110274451 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD - According to one embodiment, an image forming apparatus includes: plural image forming units including developing devices configured to respectively form images of plural colors; plural toner cartridges in which respective toner of the plural colors is stored respectively and each of the plural toner cartridges configured to supply the respective toner to the developing device respectively; first memories provided respectively incidental to the plural toner cartridges and each of the first memories in which correspondence data between parameter value affecting printing condition and printing condition calculated on the basis of characteristic of the respective toner of the plural colors is stored in advance; a detecting mechanism configured to detect the parameter value; and an arithmetic control mechanism configured to calculate each of printing conditions in the respective toner of plural colors from the correspondence data on the basis of the parameter value and calculate control condition for the image of the plural colors formed to be superimposed one on top of another on the basis of the printing condition. | 11-10-2011 |
20110284951 | Semiconductor device and method of manufacturing the semiconductor device - A semiconductor device includes a transistor that has a trench formed in an element forming region of a substrate, a gate insulating film formed on side faces and a bottom face of the trench, a gate electrode formed on the gate insulating film so as to bury the trench, a source region formed on one side in the gate longitude direction, which is formed on the surface of the substrate, and a drain region formed on the other side in the gate longitude direction. Here, the gate electrode is formed so as to be exposed also on the substrate outside the trench, and the gate electrode is disposed so as to cover upper portions of both ends of the trench and so as to form at least one concave portion having a depth reaching the substrate in a center portion. | 11-24-2011 |
20110284952 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a transistor having multiple trenches with the thickness thereof being intermittently changed in the lateral direction of a gate, a gate insulating film formed on the side walls and at the bottom of each of the trenches, a gate electrode formed over the gate insulating film, a source region formed in the surface of the substrate on one side in the longitudinal direction of the gate, and a drain region formed in the surface of the substrate on the other side in the longitudinal direction of the gate. The thickness of the gate insulating film in the lower portion of the side wall of the trench from an intermediate position directing from the surface of the substrate to the bottom of the trench to the bottom thereof is larger than the thickness of the gate insulating film in the upper portion on the side wall of the trench from the intermediate position directing from the surface of the substrate to the bottom of the trench and equal with or larger than the thickness of the gate insulating film at the bottom of the trench. | 11-24-2011 |
20110318024 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD - An image forming apparatus includes an image forming unit including a developing device, a second toner cartridge replaced for a first toner cartridge storing a first toner having a first characteristic, stores a second toner having a second characteristic, and supplies the second toner to the developing device, a first memory provided in the second toner cartridge, and stores data of the second characteristic, a toner use amount detection mechanism to detect a toner use amount in the developing device after the replacement to the second toner cartridge, a second memory in which a first print condition as an optimum print condition obtained from data of the first characteristic, the second print condition and the toner use amount are written, and an arithmetic mechanism to obtain an execution print condition changed stepwise from the first print condition to the second print condition based on the toner use amount. | 12-29-2011 |
20120319194 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME - A trench gate transistor whose gate changes depth intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The first offset region and the second offset region are shallower where they contact the device isolation film than is the device isolation film in those areas. The first and second offset regions nevertheless extend below the bottom of the trench. | 12-20-2012 |
20120319196 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor with a substrate on which source and drain regions, both of a first conductivity type, and a channel region of a second conductivity type between the source and drain are formed, and a gate electrode formed in the channel region to bury a trench formed so the depth thereof changes intermittently in the width direction of the gate. In the channel region, each on a surface of the substrate and in a bottom portion of the trench, there are formed a second high-concentration region and a first high-concentration region, and the dopant concentration of the second conductivity type is higher than the dopant concentration of the second conductivity type in portions sideward from the trench. The dopant concentration of the second conductivity type in the first high-concentration region is higher than the dopant concentration of the second conductivity type in the second high-concentration region. | 12-20-2012 |