| Patent application number | Description | Published |
|---|
| 20090087772 | DEVELOPER, IMAGE FORMING METHOD AND IMAGE FORMING APPARATUS - A yellow toner, a magenta toner and a cyan toner, which are used for forming a color image, each contain a yellow pigment having an average dispersed diameter d | 04-02-2009 |
| 20090233201 | DEVELOPER AND IMAGE FORMING APPARATUS - A developer to be used in an image forming apparatus has a carrier and a toner containing a colorant, a binder resin, a release agent, a charge controlling agent containing Al and Mg, and a conductive inorganic oxide having an intrinsic resistivity of from 1.0×10 | 09-17-2009 |
| 20090258307 | DEVELOPER AND IMAGE FORMING APPARATUS - A developer used in an image forming apparatus, the developer containing: a toner, and a carrier that charges the toner, the toner containing a core toner, and an external additive that is added to a surface of the core toner, the core toner containing a colorant, a binder resin, a releasing agent, and a charge controlling agent containing Al and Mg, an amount of the charge controlling agent on the surface of the core toner being from 0.2 to 4.0 cps/eV in terms of a Mg amount measured by EDX, the core toner having a circularity of from 0.880 to 0.930, the external additive having a primary particle diameter of from 70 to 200 nm, an amount of the external additive being from 0.2 to 3.0% by weight based on the core toner. | 10-15-2009 |
| 20100032754 | Semiconductor device and method of manufacturing the semiconductor device - A semiconductor device includes: a high withstanding voltage transistor ( | 02-11-2010 |
| 20100124714 | DEVELOPING AGENT, IMAGE FORMING APPARATUS, AND IMAGE FORMING METHOD - A developing agent is used for a recycle type image forming apparatus including an image bearing body on which an electrostatic latent image is developed with the developing agent and an image transferred to a transfer medium is formed, and includes a toner particle, a magnetic carrier to charge the toner particle to a specified polarity, and a circulation agent which is charged to a polarity reverse to that of the toner particle in the developing agent, has a primary particle diameter of 20 to 100 μm, has a magnetization lower than that of the magnetic carrier, and has a transfer efficiency of 0 to 10% from the image bearing body to the transfer medium. | 05-20-2010 |
| 20100327345 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor with a substrate on which source and drain regions, both of a first conductivity type, and a channel region of a second conductivity type between the source and drain are formed, and a gate electrode formed in the channel region to bury a trench formed so the depth thereof changes intermittently in the width direction of the gate. In the channel region, each on a surface of the substrate and in a bottom portion of the trench, there are formed a second high-concentration region and a first high-concentration region, and the dopant concentration of the second conductivity type is higher than the dopant concentration of the second conductivity type in portions sideward from the trench. The dopant concentration of the second conductivity type in the first high-concentration region is higher than the dopant concentration of the second conductivity type in the second high-concentration region. | 12-30-2010 |
| 20110068391 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME - A trench gate transistor whose gate changes depth intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The first offset region and the second offset region are shallower where they contact the device isolation film than is the device isolation film in those areas. The first and second offset regions nevertheless extend below the bottom of the trench. | 03-24-2011 |
| 20110068394 | SEMICONDUCTOR DEVICE - A trench gate transistor whose gate changes the depth thereof intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The sum of length measurements of the underlying portion of the second offset region measured from the lower corner of the trench in a direction parallel to the substrate and in a direction perpendicular to the substrate is 0.1 μm or greater. | 03-24-2011 |
