Patent application number | Description | Published |
20090230422 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer. | 09-17-2009 |
20100051978 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer; a first electrode connected to the n-type semiconductor layer and containing at least one of silver and a silver alloy; and a second electrode connected to the p-type semiconductor layer. | 03-04-2010 |
20100051987 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated. | 03-04-2010 |
20100051994 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film provided on the second semiconductor layer; and a second film provided on a rim of the first film on the second semiconductor layer. The first film has a relatively low contact resistance with the second semiconductor layer. The second film has a relatively high contact resistance with the second semiconductor layer. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface. | 03-04-2010 |
20100051995 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide. | 03-04-2010 |
20100055819 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline Al | 03-04-2010 |
20100059734 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing Al | 03-11-2010 |
20110049541 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface. | 03-03-2011 |
20110049550 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer. | 03-03-2011 |
20110117684 | Semiconductor light-emitting element and method for producing the same - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer. | 05-19-2011 |
20110220911 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light-emitting layer, a third semiconductor layer and a first electrode. The light-emitting layer is provided between the first and second semiconductor layers. The third semiconductor layer is provided on opposite side of the first semiconductor layer from the light-emitting layer, has a lower impurity concentration than the first semiconductor layer, and includes an opening exposing part of the first semiconductor layer. The first electrode is in contact with the first semiconductor layer through the opening. The third semiconductor layer further includes a rough surface portion which is provided on opposite side from the first semiconductor layer and includes a surface asperity larger than wavelength in the third semiconductor layer of peak wavelength of emission light emitted from the light-emitting layer. | 09-15-2011 |
20110220932 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer. | 09-15-2011 |
20110227033 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Al | 09-22-2011 |
20120001151 | Semiconductor light emitting device and wafer - A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing Al | 01-05-2012 |
20120217531 | SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer. | 08-30-2012 |
20120235168 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part. | 09-20-2012 |
20120292631 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part. | 11-22-2012 |
20130065340 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline Al | 03-14-2013 |
20130069032 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer. | 03-21-2013 |
20130069033 | SEMICONDUCTOR DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit. | 03-21-2013 |
20130075374 | MEMBER SEPARATION APPARATUS AND MEMBER SEPARATION METHOD - According to one embodiment, a member separation apparatus includes a stage and a light source. The stage is configured to mount a workpiece. The workpiece includes a first member and a second member. The first member is transmissive to light in a wavelength region. The wavelength region includes a first wavelength. The second member contacts with the first member. The second member has a higher absorptance for light in the wavelength region than the first member. The light source generates laser light and irradiates the workpiece with the laser light. The laser light contains a component of the first wavelength and a component of a second wavelength. The second wavelength includes the wavelength region different from the first wavelength. | 03-28-2013 |
20130087806 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening. | 04-11-2013 |
20130112988 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - A semiconductor light emitting device includes a first layer including at least one of n-type GaN and n-type AlGaN; a second layer including Mg-containing p-type AlGaN; and a light emitting section provided between the first and second layers. The light emitting section includes barrier layers of Si-containing Al | 05-09-2013 |
20130134458 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer. | 05-30-2013 |
20130146914 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide. | 06-13-2013 |
20130193443 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FORMANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor stacked unit and a silver layer. The semiconductor stacked unit includes a light emitting layer, and a semiconductor layer containing gallium provided on the light emitting layer. The silver layer contacts the semiconductor layer. A peak height belonging to a (100) plane of silver is not more than 3% of a peak height belonging to a (111) plane in an X-ray analysis. A detected intensity of a complex of gallium and nitrogen atoms at a first position is 1/100 of a maximum value in the semiconductor layer in a mass analysis. A detected intensity of gallium atoms at a second position at 40 nm distance from the first position is higher than 0.4% and lower than 3.8% of a maximum value of the detected intensity of gallium atoms in the semiconductor layer in the mass analysis. | 08-01-2013 |
20130234182 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer. | 09-12-2013 |
20130234298 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light. | 09-12-2013 |
20130256691 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline Al | 10-03-2013 |
20130299847 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer; a first electrode connected to the n-type semiconductor layer and containing at least one of silver and a silver alloy; and a second electrode connected to the p-type semiconductor layer. | 11-14-2013 |
20140021441 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes: a stacked structure unit including first and second semiconductor layers and a light emitting layer between the first and second semiconductor layers; a first electrode on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film on the second semiconductor layer and a second film on a rim of the first film. The first film has a relatively lower contact resistance with the second semiconductor layer, compared to the second film. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface. | 01-23-2014 |
20140054594 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer. | 02-27-2014 |
20140077248 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer. | 03-20-2014 |
20140091350 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface. | 04-03-2014 |
20140138722 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion. | 05-22-2014 |
20140191269 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part. | 07-10-2014 |
20140217360 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer. | 08-07-2014 |
20140252310 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a stacked body and an optical member. The stacked body includes a first semiconductor layer, a second semiconductor, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The optical member is stacked with the stacked body in the first direction. The optical member is light-transmissive. The length of the optical member in the first direction is longer than a length of the first semiconductor layer in the first direction. The surface area of the optical member projected onto a plane perpendicular to the first direction is less than a surface area of the stacked body projected onto the plane. | 09-11-2014 |
20140252382 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers. | 09-11-2014 |
20140264413 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a stacked body, a first metal layer, and a second metal layer. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first metal layer is stacked with the stacked body in the first direction to be electrically connected to one selected from the first semiconductor layer and the second semiconductor layer. The first metal layer has a side surface extending in the first direction. The second metal layer covers at least a portion of the side surface of the first metal layer. A reflectance of the second metal layer is higher than a reflectance of the first metal layer. | 09-18-2014 |
20140327027 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer. | 11-06-2014 |
20140361248 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer. | 12-11-2014 |
20150048404 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer. | 02-19-2015 |
20150056729 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide. | 02-26-2015 |
20150072459 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer. | 03-12-2015 |