Patent application number | Description | Published |
20080197433 | MEMORY DEVICE AND MEMORY - Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer, in the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer. | 08-21-2008 |
20080225581 | MEMORY DEVICE AND MEMORY - A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer. | 09-18-2008 |
20090281187 | ANTI-ALLERGIC AGENT - The inventors have found that vitamin K3 and vitamin K5 which may be used in pharmaceuticals and foods or ACNQ, DHNA, or the like which can stimulate the growth of bifidobacteria can inhibit degranulation of basophil-like cells, exhibit a potent degranulation-inhibiting effect, and are useful anti-allergic agents or foods. The present invention provides an anti-allergic agent containing, as an active ingredient, one or more species selected from among 2-amino-3-carboxy-1,4-naphthoquinone, 1,4-dihydroxy-2-naphthoic acid, 1,4-naphthoquinone, 4-amino-2-methyl-1-naphthol, 2-methyl-1,4-naphthoquinone, 2-amino-3-chloro-1,4-naphthoquinone, and a salt thereof. | 11-12-2009 |
20090285017 | MEMORY DEVICE AND MEMORY - A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer. | 11-19-2009 |
20100015110 | FERMENTED MILK FOR SKIN IMPROVEMENT AND/OR TREATMENT AND PROCESS FOR PRODUCING THE SAME - The present invention provides a composition and fermented milk, which is derived from natural product, is highly safe, exhibits improvement effect and/or therapeutic effect on skin, and comprises fermented lactic acid bacteria excellent in manufacturability. Disclosed are: use of | 01-21-2010 |
20100135068 | RESISTANCE-CHANGE MEMORY DEVICE - A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon. | 06-03-2010 |
20100135069 | RESISTANCE VARIABLE MEMORY DEVICE - A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing. | 06-03-2010 |
20100200939 | STORAGE ELEMENT AND MEMORY - A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer | 08-12-2010 |
20100314673 | MEMORY DEVICE AND MEMORY - A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer. | 12-16-2010 |
20100322973 | ANTI-ALLERGIC AGENT - Provided is an antiallergic agent including, as an active ingredient, a fermentation product of a propionic acid bacterium. | 12-23-2010 |
20100328992 | MEMORY - A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not. | 12-30-2010 |
20100328993 | RECORDING METHOD OF NONVOLATILE MEMORY AND NONVOLATILE MEMORY - A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device. | 12-30-2010 |
20100328998 | MEMORY AND WRITE CONTROL METHOD - A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more. | 12-30-2010 |
20110026322 | RECORDING METHOD FOR MAGNETIC MEMORY DEVICE - [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10 | 02-03-2011 |
20110032744 | RECORDING METHOD FOR MAGNETIC MEMORY DEVICE - [Object] To provide a recording method for a magnetic memory device including a recording layer that holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, the same level of error rate as in a case where a write pulse a little higher than the inversion threshold value is applied. | 02-10-2011 |
20110123022 | RANDOM NUMBER GENERATING DEVICE, RANDOM NUMBER GENERATING METHOD, AND SECURITY CHIP - A random number generating device includes: a random number generator configured to have a plurality of random number generating elements that generate a random number in response to supply of a spin-injection current; and a temperature controller. | 05-26-2011 |
20140001587 | STORAGE ELEMENT AND MEMORY | 01-02-2014 |
20140042570 | STORAGE ELEMENT AND MEMORY - A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides. | 02-13-2014 |
20140264674 | STORAGE ELEMENT AND MEMORY - A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides. | 09-18-2014 |