Patent application number | Description | Published |
20080198642 | SEMICONDUCTOR MEMORY DEVICE - A memory cell includes an antifuse device that is capable of having data written thereto by breakdown of a gate dielectric film by application of a high voltage. A data inversion portion generates, according to a relationship between the sense amplifier's determination and write data to be written to the memory cell, inverted write data obtained by inverting the write data. The data inversion portion also inverts, when data is read from the memory cell to which the inverted write data is written, the read data and reads it. | 08-21-2008 |
20080246535 | SEMICONDUCTOR CHARGE PUMP USING MOS (METAL OXIDE SEMICONDUCTOR) TRANSISTOR FOR CURRENT RECTIFIER DEVICE - A semiconductor charge pump includes a plurality of P-channel MOS transistors being connected in series, a plurality of first pumping capacitors one electrode of each of which is connected to a connection point of each of the P-channel MOS transistors, a clock signal generating circuit which generates first and second clock signals whose phases are different from each other by 180 degrees, the first and second clock signals being alternately supplied to the other electrodes of the first pumping capacitors. The semiconductor charge pump further includes a plurality of dynamic level converter circuits each including a resistor element and a second pumping capacitor and connected to each of gates of the P-channel MOS transistors. | 10-09-2008 |
20080316852 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises an array of memory cells each including an antifuse to store information based on a variation in resistance in accordance with destruction of the insulator in the antifuse. The antifuse includes a semiconductor substrate, a first conduction layer formed in the surface of the semiconductor substrate, a first electrode provided on the first conduction layer to be given a first voltage, a second conduction layer provided on the semiconductor substrate with the insulator interposed therebetween, and a second electrode provided on the second conduction layer to be given a second voltage different from the first voltage. The first electrode or the second electrode is formed of a metal silicide. | 12-25-2008 |
20090004037 | Magnetic Bearing and Coupling Device - A follower shaft is rotatably supported coaxially with a driving shaft. An inner rotary permanent magnet having poles in a radial direction is fixed around an outer circumference of the end of the follower shaft. On the inner circumferential surface of a cylindrical coupling, an outer rotary permanent magnet is fixed such that opposite poles face each other between the inner rotary permanent magnet and the outer rotary permanent magnet. A fixed permanent magnet is fixed such that like poles face each other between the fixed permanent magnet and the inner rotary permanent magnet. Thus, rotation of the driving shaft is transmitted to the follower shaft without contact. | 01-01-2009 |
20090027973 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes: one or more memory cells including anti-fuse elements capable of writing data by breaking down a gate insulation film of a MOS transistor with a high voltage; a sense node having its one end connected to each of the anti-fuse elements; a sense amplifier comparing the potential of the sense node with the reference potential and amplifying the difference therebetween, the sense amplifier being activated according to a sense-amplifier activation signal; an initialization circuit initializing the potential of the sense node according to an initialization signal; a control circuit outputting the initialization signal at a predetermined timing after input of an external signal input from the outside and outputting a first activation signal to activate the sense amplifier at a predetermined timing after input of the external signal; and a switching circuit outputting the first activation signal as the sense-amplifier activation signal when a normal data read operation is performed, and outputting an inverted version of the external signal as the sense-amplifier activation signal when a test execution is instructed for the one or more memory cells before the gate insulation film is broken down. | 01-29-2009 |
20090201076 | SEMICONDUCTOR CHARGE PUMP USING MOS (METAL OXIDE SEMICONDUCTOR) TRANSISTOR FOR CURRENT RECTIFIER DEVICE - A semiconductor charge pump includes a plurality of P-channel MOS transistors being connected in series, a plurality of first pumping capacitors one electrode of each of which is connected to a connection point of each of the P-channel MOS transistors, a clock signal generating circuit which generates first and second clock signals whose phases are different from each other by 180 degrees, the first and second clock signals being alternately supplied to the other electrodes of the first pumping capacitors. The semiconductor charge pump further includes a plurality of dynamic level converter circuits each including a resistor element and a second pumping capacitor and connected to each of gates of the P-channel MOS transistors. | 08-13-2009 |
20090285041 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF WRITING DATA THERETO - A non-volatile semiconductor storage device includes: a plurality of memory cells storing information based on a change in resistance value; and a plurality of first and second wirings connected to the plurality of memory cells and activated in reading data from and writing data to a certain one of the memory cells. Each of the memory cells includes: an irreversible storage element storing information based on a change in resistance value associated with breakdown of an insulation film; and a voltage booster circuit receiving an input of a voltage-boost clock performing clock operation in writing data to a certain one of the memory cells and applying a voltage-boosted signal boosted based on the voltage-boost clock to one end of the irreversible storage element. | 11-19-2009 |
20100182818 | Non-volatile semiconductor memory device and method of writing data therein - A device includes a memory cell array and a control circuit, the memory cell array inclusing word-lines, bit-lines, and memory cells arranged at the intersections of the word-lines and the bit-lines, each memory cell inclusing an electrically programmable antifuse element. The control circuit may perform, as a first step, applying a programming voltage to one of the word-lines while applying a ground voltage to bit-lines each connected to respective selected memory cells, and as a second step, after the first step, keeping one of the one word-lines at the programming voltage while concurrently reading the electrical states of the selected memory cells, and according to the read electrical states, applying the ground voltage again to a bit-line connected to an unprogrammed selected memory cell after the first step, and applying a voltage higher than the ground voltage to a bit-line connected to a programmed selected memory cell after the first step. | 07-22-2010 |
20110051495 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WITH NO DECREASE IN READ MARGIN AND METHOD OF READING THE SAME - According to one embodiment, a plurality of memory cells, each composed of a variable-resistance element and a diode, are arranged at the intersections of a plurality of word lines and a plurality of bit lines. The sense amplifier compares a voltage corresponding to current in a memory cell selected from the plurality of memory cells with a reference voltage to detect data read from the selected memory cell. The controller generates the reference voltage according to the logical value of a signal output from the sense amplifier. The controller, before detecting data in the memory cell, adjusts the reference voltage on the basis of current flowing in one of a plurality of bit lines connected to a plurality of memory cells in a half-selected state detected by the sense amplifier. | 03-03-2011 |
20110228587 | NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY - According to one embodiment, a nonvolatile semiconductor memory includes word lines, bit lines, memory cells, a dummy word line, a dummy bit line and dummy cells. The word lines and the bit lines cross. The memory cells are provided for each intersection of the word lines and bit lines. Each memory cell includes a first diode and a resistance change memory element. The dummy word line crosses the bit lines. The dummy bit line crosses the word lines. The dummy cells are provided at each intersection of the dummy word line and the bit lines, and at each intersection of the dummy bit line and the word lines. Each dummy cell includes a second diode. | 09-22-2011 |
20120069628 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell which includes a variable resistance element and a current-limiting element that has a nonlinear current-voltage characteristic and a driver which changes the resistance of the variable resistance element by causing a first current to flow in the memory cell. In addition, the nonvolatile semiconductor memory device further comprises a detection module which detects a change in the resistance of the memory cell based on the magnitude of the first current and a current supplying module which causes a second current to flow in the detection module in place of the first current. | 03-22-2012 |
20130070543 | SEMICONDUCTOR MEMORY DEVICE INCLUDING DATA TRANSFER BUS AND DATA TRANSFER METHOD OF THE DEVICE - According to one embodiment, a semiconductor memory device includes a memory cell array, a data bus, a transfer controller, column blocks, and a column selector. The data bus is divided into stages. The transfer controller serially transfers data such that the data are respectively allocated to the stages. The column blocks temporarily stores the data. The column selector selects a column block for each of the stages from the column blocks, and transfers the data parallel between the stages and the column blocks selected for the stages. The data bus extends from one end to the other in a direction in which the column blocks are arranged, and returns from the other end to the one end. | 03-21-2013 |
20130294956 | SCROLL FLUID MACHINE - A scroll fluid machine includes a revolving scroll in which a revolving wrap stands upright on an end plate supported revolvably on a drive shaft, and a fixed scroll which is provided opposite the revolving scroll and in which a fixed wrap stands upright on an end plate. The revolving and fixed wraps overlap to form a compression chamber for compressing a fluid by causing the revolving scroll to revolve. The scroll fluid machine further includes a rod-shaped member attached to the end plate of the revolving scroll and extending to a rear surface side of the fixed scroll, which is a side not opposing the revolving scroll. A revolving plate is attached to the rod-shaped member, provided with a pin crank mechanism, and supported revolvably on the drive shaft. The revolving plate is provided with a sealing unit that seals the compression chamber in an axial direction. | 11-07-2013 |