Patent application number | Description | Published |
20090086437 | ELECTRONIC CONTROL DEVICE USING LC MODULE STRUCTURE - In an electronic control device that includes two or more kinds of lead-insertion-type parts, including at least a coil and a capacitor, the parts are installed on a support that has a wiring, a terminal structure and mechanically fixing portions; the leads of the above parts are respectively inserted in and electrically connected to holes formed in the wiring portion of the support; the parts and the support are fixed to each other with an adhesion material for fixation; the upper surfaces of the parts are attached to a metallic chasis with a thermally conductive material of a low elasticity modulus interposed in between; the mechanically fixing portions of the support are fixed to the metallic chasis; and the terminal structure of the support is electrically connected to a circuit board that mounts at least a controlling element. | 04-02-2009 |
20090197375 | Metal-resin-boned structured body and resin-encapsulated semiconductor device, and fabrication method for them - A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body. | 08-06-2009 |
20100208427 | SEMICONDUCTOR POWER MODULE, INVERTER, AND METHOD OF MANUFACTURING A POWER MODULE - A semiconductor power module includes an insulated substrate mounting with a plurality of power semiconductor devices and a heat sink for radiating a heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the heat sink and the insulated substrate are bonded in metallic bonding with another surface opposite of one surface on which the radiation fins are formed with the base of the heat sink. | 08-19-2010 |
20110156225 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device achieving both electromagnetic wave shielding property and reliability in a heating process upon mounting electronic components. In the semiconductor device, mount devices | 06-30-2011 |
20110204125 | LOW TEMPERATURE BONDING MATERIAL AND BONDING METHOD - A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material. | 08-25-2011 |
20110223720 | FABRICATION METHOD FOR RESIN-ENCAPSULATED SEMICONDUCTOR DEVICE - A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly. | 09-15-2011 |
20120104618 | LOW TEMPERATURE BONDING MATERIAL AND BONDING METHOD - A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material. | 05-03-2012 |
20130119322 | CONDUCTIVE SINTERED LAYER FORMING COMPOSITION - There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 μm as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 μm and the silver oxide particles. | 05-16-2013 |
20130119525 | Power Semiconductor Unit, Power Module, Power Semiconductor Unit Manufacturing Method, and Power Module Manufacturing Method - Heat radiation surfaces | 05-16-2013 |
20130175678 | Power Semiconductor Module and Manufacturing Method Thereof - A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface. | 07-11-2013 |