| Patent application number | Description | Published |
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| 20100012935 | CU ALLOY WIRING FILM, TFT ELEMENT FOR FLAT-PANEL DISPLAY USING THE CU ALLOY WIRING FILM, AND CU ALLOY SPUTTERING TARGET FOR DEPOSITING THE CU ALLOY WIRING FILM - An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. | 01-21-2010 |
| 20100032186 | TRANSPARENT ELECTRODE FOR DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a transparent electrode for a display device which includes a first transparent conductive film containing nitrogen, and a second transparent conductive film not containing nitrogen, wherein the first transparent conductive film is in contact with an aluminum alloy film. In accordance with the present invention, there is obtained a transparent electrode for a display device which is capable of, even when a barrier metal layer to be generally provided between an aluminum alloy film and the transparent electrode is omitted, controlling the variance small while keeping the low contact resistance, and further which is also excellent in light transmission characteristics. | 02-11-2010 |
| 20100163877 | DISPLAY DEVICE - A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film. | 07-01-2010 |
| 20100207121 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer. | 08-19-2010 |
| Patent application number | Description | Published |
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| 20080223718 | AI-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to an Al-based alloy sputtering target, comprising Ni in an amount of 0.05 to 10 atomic percent, wherein the Al-based alloy sputtering target satisfies: (1) that a ratio of a P value to a total area of a sputtering surface is 70% or more, wherein the P value indicates a total of area fractions of <001>±15°, <011>±15°, <111>±15° and <311>±15°; (2) that a ratio of the area fraction of <011>±15° to the P value is 30% or more; and (3) that a ratio of the area fraction of <111>±15° to the P value is 10% or less, when crystallographic orientations <001>, <011>, <111> and <311> in a normal line direction to a sputtering surface of the Al-based alloy sputtering target are observed in accordance with the electron backscatter diffraction pattern method. | 09-18-2008 |
| 20080315203 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers. | 12-25-2008 |
| 20090001373 | ELECTRODE OF ALUMINUM-ALLOY FILM WITH LOW CONTACT RESISTANCE, METHOD FOR PRODUCTION THEREOF, AND DISPLAY UNIT - Disclosed herein are an electrode of aluminum alloy film, a method for production thereof, and a display unit provided therewith, said electrode exhibiting a low electric resistance when in contact with a transparent oxide conductive film even though the aluminum alloy contains a less amount of alloying element than usual. The electrode of low contact resistance type is an aluminum alloy film in direct contact with a transparent oxide electrode, wherein said aluminum alloy film contains 0.1-1.0 atom % of metal nobler than aluminum and is in direct contact with a transparent oxide electrode through a surface having surface roughness no smaller than 5 nm in terms of maximum height Rz. | 01-01-2009 |
| 20090004490 | LAYERED STRUCTURE AND ITS MANUFACTURING METHOD - This invention is intended to provide a layered structure in which Al alloy is directly connected to transparent oxide conducting layer without increasing electrical contact resistance between the two, with wiring resistance held low and galvanic corrosion being less likely to occur in developing solution or other electrolyte fluids, and the manufacturing method of such layered structure. The manufacturing method intended to provide such layered structure composed of the Al alloy and the transparent oxide conducting layer directly connected to each other, includes a first process to form the above transparent oxide conducting layer on a substrate, a second process to form, on the transparent oxide conducting layer, an Al alloy layer containing alloy components having less ionization tendency than aluminum, and a third process to heat the above Al alloy layer at a temperature equal to or higher than the temperature at which interchemical compound between aluminum and the above alloy components can be separated out. | 01-01-2009 |
| 20090011261 | METHOD FOR MANUFACTURING DISPLAY APPARATUS - There is provided a direct contact technology whereby the contact electric resistance between an Al alloy film and transparent oxide conductives can be reduced, the heat resistance is also excellent, and hence the Al alloy film can be in direct contact with the transparent oxide conductives, and further the electric resistivity of the Al alloy is also still more reduced, and the productivity is also more enhanced. There is provided a method for manufacturing a display apparatus having a structure in which a transparent oxide conductive film and an Al alloy film are in direct contact with each other on a substrate. The Al alloy film contains at least one alloy element selected from a group consisting of Ag, Zn, Cu, and Ni in an amount of 0.5 atomic percent or less. The temperature of the substrate is controlled to the precipitation temperature of the alloy element or higher, and the Al alloy film is formed. | 01-08-2009 |
