| Patent application number | Description | Published |
|---|
| 20080211881 | PIEZOELECTRIC MEMBER, PIEZOELECTRIC ELEMENT, AND LIQUID DISCHARGE HEAD AND LIQUID DISCHARGE APPARATUS UTILIZING PIEZOELECTRIC ELEMENT - The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of <100> orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO | 09-04-2008 |
| 20090026408 | PIEZOELECTRIC MATERIAL - The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O | 01-29-2009 |
| 20090140197 | PIEZOELECTRIC ELEMENT, AND LIQUID JET HEAD AND ULTRASONIC MOTOR USING THE PIEZOELECTRIC ELEMENT - There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): | 06-04-2009 |
| 20090315432 | METAL OXIDE, PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(Si | 12-24-2009 |
| 20100025617 | METAL OXIDE - Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). | 02-04-2010 |
| 20100025618 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by A | 02-04-2010 |
| 20100052113 | EPITAXIAL FILM, PIEZOELECTRIC ELEMENT, FERROELECTRIC ELEMENT, MANUFACTURING METHODS OF THE SAME, AND LIQUID DISCHARGE HEAD - There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO | 03-04-2010 |
| 20100155647 | OXYNITRIDE PIEZOELECTRIC MATERIAL AND METHOD OF PRODUCING THE SAME - Provided are an oxynitride piezoelectric material which exhibits ferroelectricity and has good piezoelectric properties and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): | 06-24-2010 |
| 20110012050 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): | 01-20-2011 |
| 20110079883 | FERROELECTRIC THIN FILM - Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of −10° or more to +10° or less with respect to the perpendicular direction. | 04-07-2011 |
