| Patent application number | Description | Published |
|---|
| 20080215274 | Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication - Equipment extracts components of spatial frequency that need to be evaluated in manufacturing a device or in analyzing a material or process out of edge roughness on fine line patterns and displays them as indexes. The equipment acquires data of edge roughness over a sufficiently long area, integrates a components corresponding to a spatial frequency region being set on a power spectrum by the operator, and displays them on a length measuring SEM. Alternatively, the equipment divides the edge roughness data of the sufficiently long area, computes long-period roughness and short-period roughness that correspond to an arbitrary inspection area by performing statistical processing and fitting based on theoretical calculation, and displays them on the length measuring SEM. | 09-04-2008 |
| 20080226177 | HIGH-ACCURACY PATTERN SHAPE EVALUATING METHOD AND APPARATUS - A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise. | 09-18-2008 |
| 20080293950 | Production Process of Compound Having Anti-Hcv Action and Intermediate Thereof - A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided. | 11-27-2008 |
| 20090049911 | Integrated micro electro-mechanical system and manufacturing method thereof - In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric. | 02-26-2009 |
| 20090050482 | CELL SEPARATION DEVICE AND CELL SEPARATION METHOD - Plural types of cells having different dielectrophoretic properties are separated using a simple structure. There is provided a cell separation device including: a flow path through which a cell suspension flows, the cell suspension containing plural types of cells which have different dielectrophoretic properties; electrodes disposed to face each other in a direction intersecting a flow direction of the cell suspension flowing in the flow path; an electric field gradient forming portion which generates an electric field strength gradient between the electrodes; and a power supply applying an alternating voltage having a direct current component across the electrodes. | 02-26-2009 |
| 20090064785 | Integrated micro electro-mechanical system and manufacturing method thereof - In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric. | 03-12-2009 |
| 20090092319 | PHASE-INFORMATION EXTRACTION METHOD - Only phase information of a measurement object is extracted with superior precision from a phase-information image in which background phase information is superimposed on phase information of the measurement object. A method of extracting phase information of a measurement object includes a region-specifying step of specifying a region in which a measurement object exists and a region in which no measurement object exists in a phase-information image containing measurement objects, showing a two-dimensional distribution of phase information to be measured, a background-image creating step of creating a background phase-information image by interpolating the phase information of the region in which the measurement object exists on the basis of the phase information of the region in which no measurement object exists, specified in the region-specifying step; and a difference calculating step of calculating a difference between the background phase-information image created in the background-image creating step and the phase-information image. | 04-09-2009 |
| 20090097016 | CULTURE VESSEL AND CELLULAR THICKNESS MEASUREMENT METHOD - To enable precise measurement of a cellular thickness distribution regardless of changes in the refractive index of a culture solution with the progress of culture. There is provides a culture vessel made of a transparent material with a culture surface capable of culturing cells in an adhesive manner on the bottom face, wherein a reference substance having an already known refractive index and an already known thickness dimension is fixed to a part of the culture surface. | 04-16-2009 |
| 20090097734 | CELLULAR THICKNESS MEASUREMENT METHOD - To enable precise measurement of a cellular thickness distribution regardless of changes in the refractive index of cell(s). Two-dimensional distribution of phase information is obtained, in a state where a first culture solution having a first refractive index is stored so as to completely immerse cells adhered onto a bottom face of a culture vessel, by transmitting light of a wavelength, and by photographing the transmitted light. Next, two-dimensional distribution of phase information is obtained, in a state where a second culture solution having a second refractive index is stored to have a depth to completely immerse the cells in the culture vessel, by transmitting light, and by photographing the transmitted light. Next, respective average values of the phase information are calculated. Next, the refractive index of the cell is estimated. Next, the thickness dimension is calculated using the refractive index. | 04-16-2009 |
| 20090220049 | RADIATION IMAGE CAPTURING SYSTEM, RADIATION DETECTING APPARATUS, IMAGE CAPTURING BASE, RADIATION IMAGE CAPTURING METHOD, AND PROGRAM - A radiation image capturing system includes a first image capturing apparatus for capturing a radiation image of a subject, a second image capturing apparatus for capturing a radiation image of the subject, the second image capturing apparatus having a specification different from that of the first image capturing apparatus, an image correcting device for correcting the radiation image of the subject which is captured by the second image capturing apparatus such that the radiation image of the subject which is captured by the second image capturing apparatus has the same magnification as that of the radiation image of the subject which is captured by the first image capturing apparatus, and a display unit for displaying the corrected radiation image. The radiation images captured by the image capturing apparatus of different specifications are corrected to have the same magnification. | 09-03-2009 |
| 20090236028 | METHOD FOR JOINING MATERIAL - A method for joining materials in which a second material is overlapped over a first material preliminarily formed with a joining hole so as to cover the joining hole. A joining tool arranged in alignment with the joining hole is pressed, while rotated, onto the second material so as to locally soften and enter the second material in solid phase state into the joining hole of the first material through frictional heat generated between the joining tool and the second material. The joining tool is pulled out after a geometric engaging part is provided by the second material in relation with the first material and the engaging part is allowed to harden to join the first and second materials. | 09-24-2009 |
| 20090303638 | MAGNETORESISTANCE DEVICE - A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face. | 12-10-2009 |
| 20090303639 | MAGNETORESISTANCE DEVICE - A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel. | 12-10-2009 |
| 20100001043 | METHOD AND STRUCTURE FOR JOINING MEMBERS - A method and a structure for joining members are provided which are suited for reinforcement of a shape. | 01-07-2010 |
| 20100012706 | METHOD AND STRUCTURE FOR JOINING MEMBERS - Provided are a method and a structure for joining members suited for reinforcement of a shape. | 01-21-2010 |
| 20100064494 | STRUCTURE FOR JOINING MEMBERS - Provided is a structure for joining members applicable even to different members. | 03-18-2010 |
| 20100065611 | STRUCTURE FOR JOINING MEMBERS - A structure for joining members which is suited for joining of thin members together and suited for joining of members made of different materials. The structure includes a nut, a first member superposed on the nut such that a preliminarily formed hole on the first member is contiguous with the threaded hole of the nut, and a second member superposed on the first member so as to cover the hole. | 03-18-2010 |
| 20100152456 | Intermediate compound for synthesis of viridiofungin a derivative - A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided. | 06-17-2010 |
| 20100152457 | Intermediate compound for synthesis of viridiofungin a derivative - A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided. | 06-17-2010 |
| 20100326196 | WELDING INSPECTION METHOD AND WELDING INSPECTION APPARATUS - Disclosed is a welding inspection method which does not require the inspector to be highly skilled, does not require waiting for the spot welded part to cool off, and with which the probe is not consumed or damaged. A probe temporarily mounted close to the welded part on the surface of a metal plate emits ultrasonic waves from an oblique direction with respect to the boundary surfaces between a plurality of metal plates. At this time, the probe is temporarily mounted at the position where the incident ultrasonic waves pass through the welded part at the boundary between the plurality of metal plates in an oblique direction with respect to the boundary surface. Also, a display processing means displays the intensity of the refrected ultrasonic waves. Alternatively, the display processing means displays the details of the detection result estimated based on the intensity of the reflected ultrasonic waves. | 12-30-2010 |
| 20110102947 | MAGNETORESISTANCE DEVICE - A magnetoresistance device comprises a substrate, an elongate semiconductor channel extending in a first direction and at least two conductive leads providing a set of contacts to the channel. The device may comprise an optional semiconductor shunt in contact with the channel. The optional shunt, channel and set of contacts are stacked relative to the substrate in a second direction which is perpendicular to the first direction and the surface of the substrate. The device has a side face running along the channel. The device is responsive to a magnetic field generally perpendicular to the side face. | 05-05-2011 |
