Patent application number | Description | Published |
20080257472 | METHOD FOR MANUFACTURING CERAMIC PLATES - In a method for manufacturing ceramic plates, a Pd paste which does not diffuse into ceramic is formed in a metal paste forming step; metal films each having a thickness such that ceramic layers to be formed after firing are not connected to each other in the lamination direction are formed on surfaces of ceramic green sheets using the Pd paste in a metal film forming step; following a laminate forming step, a firing treatment at a firing temperature, which is a high temperature at which no glass component remains on surfaces of the ceramic layers after the firing and which is equal to or lower than a decomposition temperature of a ceramic material forming the ceramic layers, is performed for a laminate in a firing step; oxygen present at the interfaces between the ceramic layers and the metal layers is removed by immersing a sintered body in n-butyl alcohol in a separation step so as to separate the ceramic layers and the metal layers. Accordingly, ceramic plates having a very small thickness can be manufactured without causing any damage thereto and with high efficiency and can be easily applied to laminate type electronic components. | 10-23-2008 |
20110024033 | Laminated Pieozelectric Ceramic Element Manufacturing Method - There is provided a laminated piezoelectric ceramic element manufacturing method, wherein, even when the number of internal electrode laminations is increased, the lamination and cutting steps can be simplified, to enhance cutting precision and make cutting cost low. A first laminated body having stripe-like internal electrodes is cut into a plurality of second laminated bodies so as to have a width-direction dimension W corresponding to a width dimension of a laminated piezoelectric ceramic element chip to be ultimately obtained. Two or more second laminated bodies are laminated in the laminating direction to obtain a third laminated body, and the third laminated body is cut in the laminating direction and parallel to the width direction W to obtain a laminated piezoelectric body. | 02-03-2011 |
20130277415 | METHOD FOR MANUFACTURING CERAMIC PLATES - In a method for manufacturing ceramic plates, a Pd paste which does not diffuse into ceramic is formed; metal films each having a thickness such that ceramic layers to be formed after firing are not connected to each other in the lamination direction are formed on surfaces of ceramic green sheets using the Pd paste; then, a firing treatment at a firing temperature, which is a high temperature at which no glass component remains on surfaces of the ceramic layers after the firing and which is equal to or lower than a decomposition temperature of a ceramic material forming the ceramic layers, is performed for a laminate; oxygen present at the interfaces between the ceramic layers and the metal layers is removed by immersing a sintered body in n-butyl alcohol so as to separate the ceramic layers and the metal layers. | 10-24-2013 |
Patent application number | Description | Published |
20080214000 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - The present invention relates to a polishing composition more suitable for application in polishing semiconductor devices. The polishing composition consists of a liquid component including water and water-soluble amine. The water-soluble amine includes at least one of triethylenetetramine (TETA) and tetraethylenepentamine (TEPA) and is dissolved in the water. | 09-04-2008 |
20080265205 | Polishing Composition - A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR′COOH and a general formula ROR′OPO | 10-30-2008 |
20090127500 | POLISHING COMPOSITION - A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device. | 05-21-2009 |
20110223840 | Polishing Composition and Polishing Method Using The Same - A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished formed of a substrate material for optical devices, a substrate material for power devices, or a compound semiconductor material. The abrasive grains have a zeta potential satisfying the relationship X×Y≦0, where X [mV] represents the zeta potential of the abrasive grains measured in the polishing composition and Y [mV] represents the zeta potential of the object to be polished measured during polishing using the polishing composition. The abrasive grains are preferably of aluminum oxide, silicon oxide, zirconium oxide, diamond, or silicon carbide. The object to be polished is preferably of sapphire, gallium nitride, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide. | 09-15-2011 |
20120142258 | Polishing Composition and Polishing Method Using The Same - A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1≦0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide. | 06-07-2012 |
Patent application number | Description | Published |
20080236476 | Silicon single crystal wafer for particle monitor - A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm | 10-02-2008 |
20110217180 | GAS TURBINE BLADE, MANUFACTURING METHOD THEREFOR, AND GAS TURBINE USING TURBINE BLADE - Provided are gas turbine blades in which it is possible to simplify the formation of cooling channels provided inside the turbine blades while simultaneously avoiding loss of turbine blade strength and rigidity due to forming of the cooling channels. In a gas turbine blade, cooling channels provided in the interior thereof include a plurality of straight channel-like base-side elongated holes that extend in a longitudinal direction at a base side of the turbine blade, a plurality of straight channel-like tip-side elongated holes that extend in a longitudinal direction at a tip side of the turbine blade, and a plurality of communicating hollow portions that are interposed at connection portions between the two types of elongated holes to individually allow the two types of elongated holes to communicate with each other and that have larger cross-sectional areas than the channel cross-sectional areas of both elongated holes. In addition, the communicating hollow portions are formed so as to match the position of a platform portion of the turbine blade. | 09-08-2011 |
20110217181 | GAS TURBINE BLADE, MANUFACTURING METHOD THEREFOR, AND GAS TURBINE USING TURBINE BLADE - Provided are gas turbine blades in which it is possible to simplify the formation of cooling channels provided inside the turbine blades while simultaneously avoiding loss of turbine blade strength and rigidity due to forming of the cooling channels. In a gas turbine blade ( | 09-08-2011 |
20130209271 | GAS TURBINE BLADE, MANUFACTURING METHOD THEREFOR, AND GAS TURBINE USING TURBINE BLADE - Gas turbine blades which simplify the formation of cooling channels provided inside the turbine blades while simultaneously avoiding loss of turbine blade strength and rigidity due to forming of the cooling channels. Cooling channels provided in the interior of a gas turbine blade include a plurality of straight channel-like base-side elongated holes extending in a longitudinal direction at a base side of the turbine blade, a plurality of straight channel-like tip-side elongated holes extending in a longitudinal direction at a tip side of the turbine blade, and a plurality of communicating hollow portions interposed at connection portions between the two types of elongated holes to allow the two types of elongated holes to communicate with each other, and have larger cross-sectional areas than the channel cross-sectional areas of both elongated holes. The communicating hollow portions are formed to match the position of a platform portion of the turbine blade. | 08-15-2013 |
Patent application number | Description | Published |
20130324015 | POLISHING COMPOSITION - Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a pH of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m | 12-05-2013 |
20140248776 | COMPOSITION FOR POLISHING COMPOUND SEMICONDUCTOR - Disclosed is a polishing composition that contains at least abrasive grains, an oxidizing agent having a redox potential equal to or greater than 1.8 V at a pH for application of polishing, and water. The abrasive grains are preferably composed of at least one substance selected from among silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide, and silicon nitride. The oxidizing agent is preferably composed of at least one substance selected from among sodium persulfate, potassium persulfate, and ammonium persulfate. The polishing composition preferably has a pH equal to or less than 3. | 09-04-2014 |
20140302753 | POLISHING COMPOSITION - A polishing composition containing at least water and silica and satisfying all of the following conditions (a) through (d) is provided. Condition (a) The specific surface area of the silica contained in the polishing composition is 30 m | 10-09-2014 |
20140308155 | METHOD FOR POLISHING ALLOY MATERIAL AND METHOD FOR PRODUCING ALLOY MATERIAL - An efficient polishing method for polishing an alloy material to have an excellent mirror surface is provided. The alloy material contains a main component and 0.1% by mass or more of an element that has a Vickers hardness (HV) different from the Vickers hardness of the main component by 5 or more. A polishing composition used in the polishing method contains abrasive grains and an oxidant. The alloy material is preferably an aluminum alloy, a titanium alloy, a stainless steel, a nickel alloy, or a copper alloy. It is also preferable that the alloy material is subjected to preliminary polishing before being subjected to polishing in which the polishing composition is used. | 10-16-2014 |