Patent application number | Description | Published |
20080277670 | SiC crystal and semiconductor device - The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×10 | 11-13-2008 |
20080281385 | System and Method For Phototherapy With Semiconductor Light-Emitting Element - A system for phototherapy and a method for phototherapy are disclosed. The system redeems the faults of conventional fluorescent bulb-type phototherapeutic system. Moreover, the system is small size, lightweight and thus portable, and the system renders a topical irradiation for only a diseased portion of skin possible in combination with an irradiation control system. A semiconductor ultraviolet ray light-emitting element is prepared, and a given ultraviolet ray is generated from this semiconductor ultraviolet ray light-emitting element, and the diseased site is irradiated in order to treat said diseased site. | 11-13-2008 |
20090065763 | LIGHT-EMITTING SEMICONDUCTOR DEVICE - The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode. | 03-12-2009 |
20090166674 | Ultraviolet light receiving element - In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band | 07-02-2009 |
20100327228 | GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate ( | 12-30-2010 |
20110049573 | GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of Al | 03-03-2011 |
20120161205 | GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of Al | 06-28-2012 |
20120211801 | GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - There is provided a normally-off group III nitride semiconductor device having a high breakdown field strength and minimal crystal defects, and a group III nitride laminated semiconductor wafer used to make the group III nitride semiconductor device. The group III nitride laminated semiconductor wafer | 08-23-2012 |
20130220223 | RADICAL GENERATOR AND MOLECULAR BEAM EPITAXY APPARATUS - [Object] To provide a radical generator which can produce radicals at higher density. | 08-29-2013 |
20140353804 | Method for Producing Group III Nitride Semiconductor and Group III Nitride Semiconductor - A first side surface of post of the first stripe is formed so that a plane which is most parallel to the first side surface among low-index planes of the growing Group III nitride semiconductor is a m-plane (10-10), and a first angle between the first lateral vector obtained by orthogonally projecting a normal vector of the first side surfaces to the main surface and a m-axis projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing semiconductor to the main surface is from 0.5° to 6°. A second side surface of post of the second stripe is formed so that a plane which is most parallel to the second side surface among low-index planes of the growing semiconductor is an a-plane (11-20), and a second angle between the second lateral vector and an a-axis projected vector of the a-plane is from 0° to 10°. | 12-04-2014 |