Hirose, Nirasaki-Shi
Jun Hirose, Nirasaki-Shi JP
Patent application number | Description | Published |
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20100043974 | PLASMA PROCESSING METHOD AND APPARATUS - A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate. | 02-25-2010 |
20110000883 | PLASMA PROCESSING APPARATUS, FOCUS RING, AND SUSCEPTOR - A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween. | 01-06-2011 |
20110214813 | PLASMA PROCESSING METHOD AND APPARATUS - A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate. | 09-08-2011 |
Katsuhito Hirose, Nirasaki-Shi JP
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20100080444 | PROCESSING APPARATUS, PROCESSING METHOD, METHOD OF RECOGNIZING TARGET OBJECT AND STORAGE MEDIUM - A CCD detector | 04-01-2010 |
Keizo Hirose, Nirasaki-Shi JP
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20080308041 | PLASMA PROCESSING APPARATUS - In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member for being able to absorb harmonics of the high frequency electric power source so as to come in contact with a peripheral portion or circumference of a face of the first electrode | 12-18-2008 |
20100326601 | PLASMA PROCESSING APPARATUS - In the plasma processing apparatus of the present invention, a first electrode ( | 12-30-2010 |
20130112666 | PLASMA PROCESSING APPARATUS - In the plasma processing apparatus of the present invention, a first electrode ( | 05-09-2013 |
Masayuki Hirose, Nirasaki-Shi JP
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20080306615 | CONTROL DEVICE OF SUBSTRATE PROCESSING APPARATUS AND CONTROL PROGRAM THEREFOR - A control device is provided that flexibly controls a substrate processing apparatus for each product process. Four process recipes PM | 12-11-2008 |
20100087944 | SEMICONDUCTOR MANUFACTURING APPARATUS, METHOD OF MANAGING APPARATUS OPERATION PARAMETERS, AND PROGRAM - A process information managing device including recipe storage units that store two or more recipes which comprise information about a process maintained by two or more control devices, and correspond to the two or more control devices, respectively, a receiving unit that receives process parameter information that is information about process parameters included in the two or more recipes, a recipe information obtaining unit that searches for a recipe in the recipe storage unit by using the process parameter information and obtains recipe information that is information about the found recipe, and an output unit that outputs the recipe information obtained by the recipe information obtaining unit makes it possible to easily determine the one or more recipes affecting a change in the process parameters. | 04-08-2010 |
Shigekazu Hirose, Nirasaki-Shi JP
Patent application number | Description | Published |
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20090085172 | Deposition Method, Deposition Apparatus, Computer Readable Medium, and Semiconductor Device - A deposition method includes steps of placing a substrate on a susceptor in a process chamber; supplying to the process chamber a source gas including an organic compound and a plasma gas for facilitating activation of the source gas into plasma; evacuating the process chamber to a reduced pressure; generating plasma of the plasma gas and the source gas in the process chamber to deposit a barrier film including carbon on the substrate; and applying high frequency bias electric power to the susceptor during the plasma generating step. | 04-02-2009 |
20100279510 | ETCHING METHOD AND RECORDING MEDIUM - An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas. | 11-04-2010 |