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Hironori Yamamoto
Hironori Yamamoto, Toyokawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110020087 | THREAD FORMING TAP - A thread forming tap having a complete thread portion, formed with a predetermined back taper with that decreases rotational torque during tapping work, which reduces load acting on first complete protruding portions, formed at an extreme leading end of the complete thread portion, and thereby suppressing degradation in service life of the tool due to wear or the like | 01-27-2011 |
Hironori Yamamoto, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090127669 | METHOD FOR FORMING INTERLAYER DIELECTRIC FILM, INTERLAYER DIELECTRIC FILM, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - A method for forming an interlayer dielectric film by a plasma CVD method, including turning off a radio frequency power and purging with an inert gas simultaneously. | 05-21-2009 |
| 20090246538 | METHOD OF FORMING A POROUS INSULATION FILM - A method of forming a porous insulation film uses an organic silica material gas having a 3-membered SiO cyclic structure and a 4-membered SiO cyclic structure, or an organic silica material gas having a 3-membered SiO cyclic structure and a straight-chain organic silica structure, and uses a plasma reaction in the filming process. A porous interlevel dielectric film having a higher strength and a higher adhesive property can be obtained. | 10-01-2009 |
| 20090267198 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR - The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film. | 10-29-2009 |
| 20090278178 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed is a semiconductor device which includes a MIS FET on a surface of a substrate, an insulating film on the substrate to cover the MIS FET, an opening that gets to an impurity diffusing region formed in the insulating film, another opening that gets to a gate electrode or to an extension part of the gate electrode formed in the insulating film, and an electrically conductive member including mainly copper filled in each of the openings. The insulating film includes a layer including, as main components, silicon, oxygen, carbon and hydrogen (FIG. | 11-12-2009 |
| 20100025852 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To suppress deterioration in reliability of wiring and to reduce effective dielectric constant of wiring. In a semiconductor device, copper-containing wirings are covered by barrier insulating films, and the barrier insulating films contain a component of an organic silica containing unsaturated hydrocarbon and amorphous carbon. The copper-containing wirings are covered by the barrier insulating films that contain a component that is in an organic silica structure containing unsaturated hydrocarbon and amorphous carbon. Accordingly, inter-wiring capacitance is reduced without deteriorating reliability of the copper-containing wiring, thereby realizing a high-speed LSI with low power consumption. | 02-04-2010 |
| 20100248031 | Anode for secondary battery and secondary battery using the same - A secondary battery includes an anode for a secondary battery, a cathode which absorbs and discharges lithium ions, and an electrolyte which is placed between the anode for the secondary battery and the cathode. The anode for the secondary battery includes an anode active material layer which absorbs and discharges lithium ions, the anode active material layer including a first layer including carbon as a chief ingredient, and a second layer including at least one first element having a theoretical capacity greater than a theoretical capacity of graphite, and at least one second element which has a theoretical capacity equal to or less than the theoretical capacity of graphite. The second layer includes particles, and the particles include the first element and the second element. | 09-30-2010 |
Hironori Yamamoto, Shimotsuke-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090030272 | Endoscopic treatment tool - An endoscopic treatment tool is provided which includes: a grasping portion that has a first shoulder portion and second shoulder portion; a current-carrying portion that protrudes out from a distal end of each of the first and second shoulder portions; a pivot portion that is disposed in the distal end of the first shoulder portion so as to protrude in substantially the same direction as the longitudinal direction of the first shoulder portion, the distal end of the pivot portion being provided with an insulating portion; a wire that is connected to the grasping portion; a sheath which has a tubular shape, and into which the wire and grasping portion are inserted; a main body to which the sheath is fixed; and a sliding portion which is disposed to move in the longitudinal direction of the main body in a sliding manner, and to which the wire is connected. | 01-29-2009 |
| 20100081872 | TREATMENT INSTRUMENT FOR ENDOSCOPE - A treatment instrument for an endoscope includes: an operation portion; a cylindrical sheath that is connected to the operation portion and that also comprises an insertion portion; an axial electrode that is protruded from and retracted into a distal end opening portion of the sheath by an operation of the operation portion; and a distal end electrode portion that is provided at a distal end portion of the axial electrode; wherein a tapered portion is formed at a distal end portion of the sheath, the tapered portion being in a tapered shape that a distal end side of the distal end portion is narrower than a proximal end side of the distal end portion. | 04-01-2010 |
Hironori Yamamoto, Tochigi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090247823 | Instrument for Endoscopic Treatment - A treatment instrument for an endoscope is provided that is suitable for cutting submucosa in endoscopic submucosal dissection. The treatment instrument for an endoscope includes a treatment portion having a cutting unit at a tip of an insertion portion that is to be inserted into the body. The main unit of the treatment portion is formed in a sawtooth shape having a peak portion and a valley portion. An electrode plate serving as the cutting unit is provided in the valley portion. | 10-01-2009 |
| 20090254085 | TREATMENT INSTRUMENT FOR ENDOSCOPE - A treatment instrument for endoscope that is suitable for cutting submucosal layer in endoscopic submucosal dissection is provided, and the treatment instrument for endoscope has a treatment section at a distal end of an insertion section which is inserted in a body. The treatment section includes a conductor that is connected to a high-frequency source, and is configured to have a sandwich structure in which the conductor is sandwiched between a non-conductor on the distal end side thereof and a non-conductor on a proximal end side thereof. The conductor is formed to be exposed in a strip-shape at a side surface of the treatment section, and a lateral movement of the treatment section causes a cutting of a submucosal layer with the conductor to be performed. | 10-08-2009 |
Hironori Yamamoto, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110171775 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film. | 07-14-2011 |