| Patent application number | Description | Published |
|---|
| 20080308036 | VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD - There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder. | 12-18-2008 |
| 20080311294 | VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD - There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder. | 12-18-2008 |
| 20090007841 | VAPOR-PHASE GROWING APPARATUS AND VAPOR-PHASE GROWING METHOD - A vapor-phase growing apparatus and a vapor-phase growing method which reduce sticking of a wafer to a holder during vapor-phase growth are provided. In the vapor-phase growing apparatus, a holder arranged in a chamber includes a disk-like member having a recessed portion at the center of a holder or a ring-like member having a recessed portion at a center of a holder and having an opening in a bottom center of the holder. A first projecting portion is arranged on an inner circumference wall surface of the holder, and a second projecting portion is formed on a bottom surface of the recessed portion of the holder. In this manner, the holder can support a wafer with a small contact area. In vapor-phase growth, the wafer can be prevented from sticking to the holder. | 01-08-2009 |
| 20090139448 | VAPOR PHASE GROWTH APPARATUS ANS VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus and a vapor phase growth method capable of improving the yield rate of wafers by stopping infiltration of metal contaminants generated below a horizontal disk-like susceptor is provided. The vapor phase growth apparatus according to embodiments of the present invention includes a holder having an annular shape and on which a wafer can be placed, a disk-shaped susceptor on which the holder can be placed and provided on an upper surface thereof with circumferential steps inscribed in inner circumferential edge of the holder when the holder is placed, a rotation driving mechanism for rotating the susceptor and the holder at a predetermined rotational speed, a heating mechanism for heating the wafer placed on the holder, and a wafer push-up mechanism to push up an undersurface of the holder outside the rotation driving mechanism. | 06-04-2009 |
| 20090194018 | APPARATUS AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - An apparatus for manufacturing an epitaxial wafer, includes: a chamber; a gas inlet provided in the chamber and introducing a reaction gas into the chamber; a gas outlet provided in the chamber and exhausting the reaction gas; a rotator unit provided inside the chamber; a wafer holder provided on an upper portion of the rotator unit and holding a wafer; an inner heater provided inside the rotator unit; and an outer heater provided between the rotator unit and an inner wall of the chamber. | 08-06-2009 |
| 20100021631 | COATING APPARATUS AND COATING METHOD - In a coating apparatus, a distributor plate | 01-28-2010 |
| 20110120366 | SUSCEPTOR, FILM FORMING APPARATUS AND METHOD - An outer peripheral portion of the silicon wafer is supported by the first susceptor part. The second susceptor part is a close fit in the opening of the first susceptor part to support a portion other than the outer peripheral portion of the silicon wafer. The second susceptor part comes into contact with the outer peripheral portion of the first susceptor part and is disposed in such a manner that a clearance having a predetermined size is formed between the first susceptor part and the second susceptor part and between the opening and the outer peripheral portion thereof. A gas exiting the clearance, which was expanded by heating, is expelled into the chamber via through holes. | 05-26-2011 |
| 20110171380 | SUSCEPTOR, COATING APPARATUS AND COATING METHOD USING THE SUSCEPTOR - In accordance with the embodiment of the present invention, there is provided a susceptor which includes an annular first susceptor portion for supporting the peripheral portion of a silicon wafer and further includes a second susceptor portion provided in contact with the peripheral portion of the first susceptor portion and covering the opening of the first susceptor portion. The second susceptor portion is disposed so that, when the silicon wafer is supported on the first susceptor portion, a gap of a predetermined size is formed between the silicon wafer and the second susceptor portion, and so that another gap of a size substantially equal to the predetermined size and directly connected to the above gap is formed between the first susceptor portion and the second susceptor portion. | 07-14-2011 |
