Patent application number | Description | Published |
20090114933 | GaN BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP - A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf. | 05-07-2009 |
20090205707 | SOLAR CELL AND METHOD FOR PRODUCING THE SAME - The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In | 08-20-2009 |
20090267103 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer | 10-29-2009 |
20090267109 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In | 10-29-2009 |
20090309119 | Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate | 12-17-2009 |
20100025684 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LAYER, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer ( | 02-04-2010 |
20100051981 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer | 03-04-2010 |
20100052007 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp. | 03-04-2010 |
20100230714 | METHOD FOR PRODUCING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP USING THE SAME - A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer | 09-16-2010 |
20100295086 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME, CONDUCTIVE TRANSLUCENT ELECTRODE FOR COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LAMP, ELECTRONIC DEVICE, AND MECHANICAL APPARATUS - The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer ( | 11-25-2010 |
20110018022 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device of the present invention includes: a substrate ( | 01-27-2011 |
20110062479 | METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer ( | 03-17-2011 |
20110068349 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP - A semiconductor light-emitting device ( | 03-24-2011 |
20110095327 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP - A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer ( | 04-28-2011 |
20110104837 | GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH EMISSION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced. | 05-05-2011 |
20110198567 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD - The semiconductor light-emitting device ( | 08-18-2011 |
20110220872 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In | 09-15-2011 |
20120001220 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND LAMP - Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer ( | 01-05-2012 |
20130113012 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LAMP, ELECTRONIC DEVICE AND MACHINE - A semiconductor light-emitting element ( | 05-09-2013 |
20130175571 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - In a semiconductor light emitting element | 07-11-2013 |
20130193478 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface. | 08-01-2013 |
20140117402 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - A semiconductor light emitting element ( | 05-01-2014 |
20140131758 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - A semiconductor light emitting element ( | 05-15-2014 |