| Patent application number | Description | Published |
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| 20090194784 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF, GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP - A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method. | 08-06-2009 |
| 20090206361 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING THE SAME, AND LAMP THEREOF - A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer | 08-20-2009 |
| 20100025684 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LAYER, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer ( | 02-04-2010 |
| 20100213476 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. The method of manufacturing a group-III nitride compound semiconductor light-emitting device includes: a pre-process of performing plasma processing on a substrate ( | 08-26-2010 |
| 20110095327 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP - A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer ( | 04-28-2011 |
| 20110095331 | GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP - Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate | 04-28-2011 |
| 20110163349 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LAMP - The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer. | 07-07-2011 |
| Patent application number | Description | Published |
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| 20080296898 | Wind Power Generation System and Method of Controlling Power Converter - A wind power generation system temporarily stops a power converter when a system disturbance occurs, and reactivates the power converter after detecting a solution of the problem of an influence (overcurrent of a stator, direct current component of a stator, overcurrent of a rotor, etc.) of a fault occurring in a doubly-fed generator during a system fault. During a system fault, a reactive current can be safely output from a doubly-fed generator to an electric power system without destroying equipment of the wind power generation system. | 12-04-2008 |
| 20080304188 | Wind Power Generation System and Control Method Thereof - In a wind power generation system, an energy consuming unit is connected to a DC part of a generator-side converter. A shunt circuit is connected between the generator-side converter and a rotor of an AC-excited power generator. In the event of system failure, the switching operation of the converter is stopped, the shunt circuit is put into operation, and the energy consuming unit is put into operation so that DC voltage (voltage of the DC part) is maintained within a prescribed range. | 12-11-2008 |
| 20090200803 | WIND POWER GENERATION SYSTEM - In a wind power generation system, an AC input of a unit for coping with system faults is connected to an excitation converter and a DC port of the unit for coping with system faults is connected to a DC port of a converter through resistors. A plurality of energy consumptive circuits each constructed of a resistor and switching units are provided for the DC port of the unit for coping with system faults. | 08-13-2009 |
| 20090278354 | Wind turbine generator system - In a wind turbine generator system including an AC exciting converter a grid side converter, and a controller configured to control the AC-exciting converter and the grid side converter, the controller operates a short-circuiting circuit when decrease in the grid voltage and increase in the DC voltage are detected. | 11-12-2009 |
| 20100201330 | WIND POWER GENERATION SYSTEM - A wind power generation system includes an excessive current consumption device, an AC input of which is connected between a generator rotor and an excitation converter on a system failure to detect a DC voltage ascent of the excitation converter and operate a shunt circuit on the system failure. | 08-12-2010 |
