Patent application number | Description | Published |
20080305575 | THIN FILM TRANSISTOR HAVING OXIDE SEMICONDUCTOR LAYER AND MANUFACTURING METHOD THEREOF - A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film. | 12-11-2008 |
20090040408 | DISPLAY DEVICE - A display device includes a substrate having a display area; a plurality of scanning lines and a plurality of data lines, arranged in the display area over the substrate, wherein the data lines extend substantially orthogonally to the scanning lines; a plurality of switching elements each connected to respective one of the scanning lines and to respective one of the data lines; a plurality of pixel electrodes each connected to respective one of the switching elements; and a plurality of storage capacitance lines disposed substantially in parallel with the data lines, each of the storage capacitance lines having a portion overlapping with a portion of the pixel electrode, the storage capacitance lines being disposed on a plane on which the data lines are disposed and being made of the same material as the data lines. | 02-12-2009 |
20090244419 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device with multiple pixels provided therein is disclosed comprising: a first sub-pixel provided for each of said pixels and including, a first liquid crystal capacitance formed with a liquid crystal sandwiched between a common electrode and a first pixel electrode, and a first auxiliary capacitance formed with a solid dielectric material sandwiched between said first pixel electrode and a first auxiliary capacitance electrode; a second sub-pixel disposed adjacent to said first sub-pixel for each of said pixels and including, a second liquid crystal capacitance formed with a liquid crystal sandwiched between said common electrode and a second pixel electrode, a second auxiliary capacitance formed with a solid dielectric material sandwiched between said second pixel electrode and a second auxiliary capacitance electrode, and a step-down capacitance formed with a solid dielectric material sandwiched between said second pixel electrode and a step-down capacitance electrode; a first voltage application means for applying a common first voltage to said common electrode, said first auxiliary capacitance electrode, and said second auxiliary capacitance electrode; and a second voltage application means for applying a second voltage, which is different from said first voltage, to said step-down capacitance electrode. | 10-01-2009 |
20100012939 | INTERCONNECTION STRUCTURE BETWEEN SIGNAL LINE AND THIN FILM TRANSISTER - A liquid crystal display device achieving high aperture rate and high definition is disclosed. The liquid crystal display device comprises a plurality of scanning lines | 01-21-2010 |
20100140624 | Liquid Crystal Display Device - A liquid crystal display device, includes: a gate line ( | 06-10-2010 |
20110234957 | DISPLAY APPARATUS - A display apparatus includes a first gate line extended in a predetermined direction; a second gate line extended in parallel to the first gate line; a first gate output terminal corresponding to the first gate line; a second gate output terminal corresponding to the second gate line; a first gate leading line electrically connecting the first gate line to the first gate output terminal; a second gate leading line electrically connecting the second gate line to the second gate output terminal and having a length longer than said first gate leading line; and a static electric protection line disposed so as to overlap the first gate leading line and the second gate leading line with an insulating layer interposed between said static electric protection line and the first and second gate leading lines, wherein an overlapping area between the first gate leading line and the static electric protection line is larger than an overlapping area between the second gate leading line and the static electric protection line. | 09-29-2011 |
Patent application number | Description | Published |
20080262151 | Resin Composition and Molded Article Comprising the Same - A resin composition in which a polylactic acid resin (A) 95-5 wt %, an aromatic polycarbonate resin (B) 5-95 wt %, and, with respect to 100 wt parts of the total of the (A) and the (B), at least one compatibilizer selected from a polymer compound containing an acrylic resin or styrene resin unit as a graft (C), a polymer compound to which a glycidyl compound or an acid anhydride is grafted or copolymerized (D) and an oxazoline compound, an oxazine compound and a carbodiimide compound (E) are compounded. | 10-23-2008 |
20110275743 | FLAME-RETARDANT THERMOPLASTIC RESIN COMPOSITION AND MOLDED ARTICLE - A flame-retardant thermoplastic resin composition that has a largely decreased corrosiveness to metals while maintaining a high degree of flame retardancy is provided, which is produced by adding a phosphinic acid salt and a compound having a specific structure to a thermoplastic resin, and molded articles with largely decreased corrosiveness to metals are also provided, so that useful molded articles can be provided as materials for mechanical machine parts, electric/electronic components, and automotive parts. The flame-retardant thermoplastic resin composition includes 65 to 99 wt % of (A) a thermoplastic resin, 1 to 35 wt % of (B) at least one phosphinic acid salt selected from the group of phosphinic acid salt, diphosphinic acid salt, polymer of phosphinic acid salts, and polymer of diphosphinic acid salts, and 0.001 to 0.70 wt % of (C) a compound having a specific, and molded articles produced therefrom. | 11-10-2011 |