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Hiromitsu Ishii
Hiromitsu Ishii, Nagoya-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110071247 | RESIN COMPOSITION AND MOLDED ARTICLE COMPRISING THE SAME - A resin composition comprises a polylactic acid resin (A) 75-10 wt %, an aromatic polycarbonate resin (B) 25-90 wt % and a polymer compound to which a glycidyl compound or an acid anhydride is grafted or copolymerized (D) 1-50 wt parts with respect to 100 wt parts of the total of the component (A) and the component (B). | 03-24-2011 |
Hiromitsu Ishii, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080305575 | THIN FILM TRANSISTOR HAVING OXIDE SEMICONDUCTOR LAYER AND MANUFACTURING METHOD THEREOF - A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film. | 12-11-2008 |
| 20090040408 | DISPLAY DEVICE - A display device includes a substrate having a display area; a plurality of scanning lines and a plurality of data lines, arranged in the display area over the substrate, wherein the data lines extend substantially orthogonally to the scanning lines; a plurality of switching elements each connected to respective one of the scanning lines and to respective one of the data lines; a plurality of pixel electrodes each connected to respective one of the switching elements; and a plurality of storage capacitance lines disposed substantially in parallel with the data lines, each of the storage capacitance lines having a portion overlapping with a portion of the pixel electrode, the storage capacitance lines being disposed on a plane on which the data lines are disposed and being made of the same material as the data lines. | 02-12-2009 |
| 20090244419 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device with multiple pixels provided therein is disclosed comprising: a first sub-pixel provided for each of said pixels and including, a first liquid crystal capacitance formed with a liquid crystal sandwiched between a common electrode and a first pixel electrode, and a first auxiliary capacitance formed with a solid dielectric material sandwiched between said first pixel electrode and a first auxiliary capacitance electrode; a second sub-pixel disposed adjacent to said first sub-pixel for each of said pixels and including, a second liquid crystal capacitance formed with a liquid crystal sandwiched between said common electrode and a second pixel electrode, a second auxiliary capacitance formed with a solid dielectric material sandwiched between said second pixel electrode and a second auxiliary capacitance electrode, and a step-down capacitance formed with a solid dielectric material sandwiched between said second pixel electrode and a step-down capacitance electrode; a first voltage application means for applying a common first voltage to said common electrode, said first auxiliary capacitance electrode, and said second auxiliary capacitance electrode; and a second voltage application means for applying a second voltage, which is different from said first voltage, to said step-down capacitance electrode. | 10-01-2009 |
| 20100012939 | INTERCONNECTION STRUCTURE BETWEEN SIGNAL LINE AND THIN FILM TRANSISTER - A liquid crystal display device achieving high aperture rate and high definition is disclosed. The liquid crystal display device comprises a plurality of scanning lines | 01-21-2010 |
| 20100140624 | Liquid Crystal Display Device - A liquid crystal display device, includes: a gate line ( | 06-10-2010 |
Hiromitsu Ishii, Hamura-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090109361 | LIQUID CRYSTAL DISPLAY DEVICE AND ITS DRIVING METHOD - A liquid crystal display device is disclosed comprising a display part, a scanning line driving circuit, a signal line driving circuit, a counter electrode driving circuit for providing counter electrodes with a counter electrode driving signal reversed in phase from a signal line driving circuit, an auxiliary capacitance having one end connected to an output end of each of switching elements, and an auxiliary capacitance line driving circuit for driving a plurality of auxiliary capacitance lines arranged in rows and has ends of such auxiliary capacitances in each row commonly connected thereto, wherein the auxiliary capacitance line driving circuit is adapted to apply a first voltage to the auxiliary capacitance lines for a first half cycle of the counter electrode driving signal and apply a second voltage thereto for a (p+½)th cycle after the first period of the counter electrode driving signal where p is 0 or a natural number, said auxiliary capacitance line driving circuit making the auxiliary capacitance line in a floating condition after said (p+½) th cycle during the remaining holding time. | 04-30-2009 |
| 20090269881 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR INCLUDING LOW RESISTANCE CONDUCTIVE THIN FILMS - A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer. | 10-29-2009 |
Hiromitsu Ishii, Aichi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080262151 | Resin Composition and Molded Article Comprising the Same - A resin composition in which a polylactic acid resin (A) 95-5 wt %, an aromatic polycarbonate resin (B) 5-95 wt %, and, with respect to 100 wt parts of the total of the (A) and the (B), at least one compatibilizer selected from a polymer compound containing an acrylic resin or styrene resin unit as a graft (C), a polymer compound to which a glycidyl compound or an acid anhydride is grafted or copolymerized (D) and an oxazoline compound, an oxazine compound and a carbodiimide compound (E) are compounded. | 10-23-2008 |
Hiromitsu Ishii, Mitaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110199528 | DISPLAY DEVICE AND CAMERA - A display device includes a liquid crystal layer, which is formed of a polymer dispersed liquid crystal held between a transparent first substrate and a transparent second substrate, a transparent first segment electrode, which is formed on the first substrate so that a predetermined area becomes a positive pattern with respect to a predetermined display information, a transparent second segment electrode, which is formed on the first substrate so that a predetermined area becomes a negative pattern with respect to the predetermined display information, and the transparent second segment electrode is formed as the same first layer as the first segment electrode, a transparent common electrode, which is formed on the second substrate to face the first and second segment electrodes, and a transparent auxiliary electrode, which is formed on the first substrate along a gap between the first and second segment electrodes. | 08-18-2011 |