Patent application number | Description | Published |
20110272664 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode. | 11-10-2011 |
20120091426 | RESISTANCE-VARIABLE ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order. | 04-19-2012 |
20120280200 | RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING RESISTANCE CHANGE ELEMENT - A resistance changing element according to the present invention comprises a first electrode ( | 11-08-2012 |
20130009123 | VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT, AND METHODS FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE - A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode. | 01-10-2013 |
20130082231 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor device includes multilayer interconnects and two variable resistance elements ( | 04-04-2013 |
20130092895 | SEMICONDUCTOR DEVICE AND OPERATION METHOD FOR SAME - A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein
| 04-18-2013 |
20130181180 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element. | 07-18-2013 |
20150155487 | RESISTANCE CHANGING ELEMENT CAPABLE OF OPERATING AT LOW VOLTAGE, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING RESISTANCE CHANGE ELEMENT - A resistance changing element according to the present invention comprises a first electrode ( | 06-04-2015 |