Patent application number | Description | Published |
20090243872 | TAMPER PREVENTION SYSTEM - A tamper prevention system includes a mounting unit, a portable terminal device, a first data input unit, an authentication data storing unit, an authentication unit, a detecting unit, and a setting unit. The portable terminal device is detachably mounted to the mounting unit. The portable terminal device includes an operation input unit, and a performing unit. The operation input unit enables a user to input operation data. The performing unit performs operation in accordance with the operation data when the performing unit is set to a first mode, and fails to perform operation in accordance with the operation data when the performing unit is set to a second mode. The first data input unit enables the user to input first data. The authentication data storing unit stores authentication data. The authentication unit authenticates the user when the first data matches the authentication data. The detecting unit detects whether or not the portable terminal device is removed from the mounting unit. The setting unit sets the performing unit to the first mode when the authenticating unit has authenticated a user, and that sets the performing unit to the second mode when the authenticating unit has failed to authenticate the user and the detecting unit has detected that the portable terminal device is removed from the mounting unit. | 10-01-2009 |
20100182234 | Projector System and Driving Method Thereof - In a projector system which includes a plurality of projectors and a pointer, the projector generates instruction information and positional information based on a spot light radiated from the projector to a projection area of the projector, and transmits the instruction information and the positional information to another projector as processing information. One projector detects the spot light and transmits the processing information to another projector, and another projector detects the spot light. Both of a projection image which one projector projects and a projection image which another projector projects are associated with each other based on the processing information, and at least the projection image which one projector projects is changed. | 07-22-2010 |
Patent application number | Description | Published |
20090034131 | Magnetic reading head and magnetic recording apparatus - To provide a magnetic reading head that features high resolution and low noise, and that can support a hard disk with terabit-level surface recording density. A current is caused to flow from a pinned layer with its magnetization direction fixed by an antiferro magnetic material, to a non-magnetic thin wire having a portion affected by an external magnetic field and a portion not affected by the external magnetic field, so that spin polarized electrons are accumulated in the non-magnetic thin wire. A distance between voltage terminals of a voltmeter is set to less than the spin diffusion length of the non-magnetic thin wire. A change in the external magnetic field modulates some of the accumulated spin polarized electron, but does not others. Accordingly, an electrical potential difference depending on the external magnetic field is generated between the both end surfaces of the non-magnetic thin wire, and measured with the voltmeter. | 02-05-2009 |
20090161265 | Magnetic sensor, magnetic head, and magnetic memory by using spin hall devices - A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair. | 06-25-2009 |
20090310399 | SEMICONDUCTOR DEVICE - In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb. | 12-17-2009 |
20090310400 | SEMICONDUCTOR DEVICE - In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction. | 12-17-2009 |
20130028013 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY CELL USING SAME, AND RANDOM ACCESS MEMORY - Provided is a magnetoresistive effect element which uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers | 01-31-2013 |
20130107616 | MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME | 05-02-2013 |
Patent application number | Description | Published |
20110233700 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME - Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation. | 09-29-2011 |
20120133008 | SPIN-INJECTION ELEMENT, AND MAGNETIC FIELD SENSOR AND MAGNETIC RECORDING MEMORY EMPLOYING THE SAME - Provided are a spin-injection element having high spin-injection efficiency, and a magnetic field sensor and a magnetic recording memory employing the element. The element comprises a barrier layer, a magnetic conductive layer, and a spin accumulation portion comprised of non-magnetic conductive material. In the element, a first spin accumulation layer ( | 05-31-2012 |