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Hiroko Nakamura
Hiroko Nakamura, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100317196 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, includes: forming a first resist on a workpiece; patterning the first resist by performing selective exposure, baking, and development on the first resist; forming a second resist on the workpiece after the patterning the first resist; patterning the second resist by performing selective exposure, baking, and development on the second resist to selectively remove a part of the second resist and remove the first resist left on the workpiece; and processing the workpiece by using the patterned second resist as a mask. | 12-16-2010 |
Hiroko Nakamura, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080305443 | PATTERN FORMING METHOD USING RELACS PROCESS - A resist pattern is formed on a to-be-processed film. Ions are implanted in the upper surface of the resist pattern. After ion implantation, an organic film is formed to cover the resist pattern and heated. A crosslinked resin film made of the organic film which has crosslinked is formed on the sidewall of the resist pattern by developing the organic film after heating. After formation of the crosslinked resin film, the resist pattern is removed. The to-be-processed film is processed using the crosslinked resin film as a mask. | 12-11-2008 |
| 20090011370 | PATTERN FORMING METHOD USING TWO LAYERS OF RESIST PATTERNS STACKED ONE ON TOP OF THE OTHER - A pattern forming method using two layers of resist pattern stacked one on the other has been disclosed. First, a first resist pattern is formed on a to-be-processed film. The first resist pattern is slimmed. On the slimmed first resist pattern and to-be-processed film, a second resist pattern is formed. With the first and second resist patterns as a mask, the film is processed. | 01-08-2009 |
| 20100021850 | PATTERN FORMING METHOD - A pattern forming method has forming a first resist film on a processed film, patterning the first resist film into a first resist pattern, forming a first film containing a photo acid generator so as to cover the first resist pattern, forming a second resist film so as to cover the first film, irradiating a predetermined region of the second resist film with exposure light, heating the first film and the second resist film, performing a development process, removing the second resist film of the predetermined region and forming a second resist pattern while the first film is left, and etching the processed film with the first resist pattern and the second resist pattern as a mask. | 01-28-2010 |
Hiroko Nakamura, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20100016307 | NOVEL COMPOUNDS - The present invention relates to compounds of formula (I): | 01-21-2010 |
Hiroko Nakamura, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20080197456 | Substrate polishing method, semiconductor device and fabrication method therefor - A substrate polishing method, a semiconductor device and a fabrication method for a semiconductor device are disclosed by which high planarization polishing can be achieved. In the substrate polishing method, two or more different slurries formed from ceria abrasive grains having different BET values from each other are used to carry out two or more stages of chemical-mechanical polishing processing of a polishing object oxide film on a substrate to flatten the polishing object film. | 08-21-2008 |
| 20090246891 | MARK FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A mark forming method includes forming a first mask layer on a semiconductor substrate; forming at least three first patterns having periodicity on the first mask layer; forming a second mask layer on the first mask layer having the first patterns formed thereon; and forming an opening in the second mask layer to cover at least two patterns on ends of the at least three first patterns, thereby forming a mark composed of exposed ones of the first patterns. | 10-01-2009 |