Patent application number | Description | Published |
20100207162 | VERTICAL AND TRENCH TYPE INSULATED GATE MOS SEMICONDUCTOR DEVICE - A vertical and trench type insulated gate MOS semiconductor device is provided in which the surfaces of p-type channel regions and the surfaces of portions of an n-type semiconductor substrate alternate in the longitudinal direction of the trench between the trenches arranged in parallel, and an n | 08-19-2010 |
20110006403 | SEMICONDUCTOR DEVICE AND THE METHOD FOR MANUFACTURING THE SAME - A semiconductor device is disclosed which includes active section | 01-13-2011 |
20110215435 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p | 09-08-2011 |
20110281406 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A manufacturing method is disclosed which ensures strength of a wafer and improves device performance. A thermal diffusion layer is formed from a front surface of a wafer. A tapered groove which reaches the thermal diffusion layer is formed from a back surface by anisotropic etching with alkaline solution. In-groove thermal diffusion layer is formed on side wall surfaces of the groove. A separation layer of a reverse blocking IGBT is configured of the thermal diffusion layer and the in-groove diffusion layer. The thermal diffusion layer is formed shallowly by forming the in-groove diffusion layer. It is possible to considerably reduce thermal diffusion time. By carrying out an ion implantation forming the in-groove diffusion layer and an ion implantation forming a collector layer separately, it is possible to select an optimum value for tradeoff between turn-on voltage and switching loss, while ensuring reverse blocking voltage of the reverse blocking IGBT. | 11-17-2011 |
20140061672 | SEMICONDUCTOR DEVICE - A semiconductor device includes an active region in which current flows when the semiconductor device is in an on state and a breakdown voltage structure portion which surrounds the active region. In the active region, a MOS gate structure includes, a p well region, an n | 03-06-2014 |
20140094020 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p | 04-03-2014 |
20140162413 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method includes forming on a first main surface of a semiconductor wafer of a first conduction type, a gate electrode of a semiconductor element, an edge termination region for forming a breakdown voltage of the semiconductor element, and a first semiconductor region of a second conduction type which surrounds the semiconductor element and the edge termination region. A groove may be formed to reach the first semiconductor region from a second main surface of the semiconductor wafer. The groove is formed so that a portion of the semiconductor wafer, that forms an outer circumferential end of the semiconductor wafer, remains and the groove is further towards a center of the semiconductor wafer than the outer circumferential end. A third semiconductor region of the second conduction type is on a side wall of the groove and electrically connects the first semiconductor region and a second semiconductor region. | 06-12-2014 |
20140361312 | SEMICONDUCTOR DEVICE - In aspects of the invention, SiC reverse blocking MOSFET includes an active region including a MOS gate structure and a breakdown voltage structure portion surrounding the outer circumference of the active region, which are provided on the surface side of a SiC-n | 12-11-2014 |
20150064852 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for manufacturing a reverse blocking MOS semiconductor device, a gettering polysilicon layer is formed on a rear surface of an FZ silicon substrate. Then, a p | 03-05-2015 |