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Hiroki Usui

Hiroki Usui, Chiba JP

Patent application numberDescriptionPublished
20100313938COUNTER ELECTRODE AND PHOTOELECTRIC CONVERSION ELEMENT INCLUDING THE COUNTER ELECTRODE - The present invention provides a counter electrode that is excellent in photoelectric conversion efficiency and may achieve a photoelectric conversion element where a short circuit between a working electrode and a counter electrode hardly occurs, and a photoelectric conversion element including the counter electrode. The present invention is a counter electrode that includes an intermediate layer made of porous carbon, and an insulating separator that is disposed on one surface of the intermediate layer. The porous carbon includes a plurality of carbon nanotubes.12-16-2010
20110088745PHOTOELECTRIC CONVERSION ELEMENT MODULE - A photoelectric conversion element module 04-21-2011
20110088772METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT MANUFACTURED BY THE SAME, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT MODULE, AND PHOTOELECTRIC CONVERSION ELEMENT MODULE MANUFACTURED BY THE SAME - A method of manufacturing a photoelectric conversion element includes: a first step of forming a porous oxide semiconductor layer on a surface of a catalytic layer of a first electrode including a metal plate made of titanium or a titanium alloy and the catalytic layer, or a surface of a transparent conductor of a second electrode including the transparent conductor; a second step of supporting a photo-sensitized dye on the porous oxide semiconductor layer; a third step of surrounding and sealing the porous oxide semiconductor layer and an electrolyte between the first electrode and the second electrode with a sealing material; and a fourth step of forming a terminal on the metal plate. In the fourth step, the terminal is formed by pressing a metal member including at least one of copper and nickel against the metal plate and applying an ultrasonic wave to the metal member.04-21-2011
20110088773METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT MANUFACTURED BY THE SAME, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT MODULE, AND PHOTOELECTRIC CONVERSION ELEMENT MODULE MANUFACTURED BY THE SAME - A method of manufacturing a photoelectric conversion element includes: a semiconductor forming step of forming a porous oxide semiconductor layer on a surface of a catalytic layer of a first electrode including a metal plate made of titanium or an alloy including titanium and the catalytic layer, or a surface of a transparent conductor of a second electrode including the transparent conductor; a dye supporting step of supporting a photo-sensitized dye on the porous oxide semiconductor layer; a sealing step of surrounding and sealing the porous oxide semiconductor layer and an electrolyte between the first electrode and the second electrode with a sealing material; and a terminal forming step of forming a terminal on the metal plate. In the terminal forming step, the terminal is formed by applying an ultrasonic wave to a high-melting-point solder while the high-melting-point solder is heated to melt.04-21-2011
20110126879PHOTOELECTRIC CONVERSION ELEMENT MODULE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT MODULE - A photoelectric conversion element module 06-02-2011

Hiroki Usui, Kanagawa JP

Patent application numberDescriptionPublished
20100188118Semiconductor integrated circuit - Disclosed herein is a semiconductor integrated circuit including: a memory circuit section used for storing data; and a non-memory circuit section which is provided to serve as a section other than the memory circuit section and used for storing no data, wherein the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the non-memory circuit section is lower than the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the memory circuit section.07-29-2010

Hiroki Usui, Tokyo JP

Patent application numberDescriptionPublished
20090253031ELECTROLYTE COMPOSITION, PHOTOELECTRIC CONVERSION ELEMENT USING THE SAME, AND DYE-SENSITIZED PHOTOVOLTAIC CELL - An electrolyte composition containing an ionic liquid and conductive particles, an electrolyte composition containing an ionic liquid and oxide semiconductor particles and optionally containing conductive particles, and an electrolyte composition containing an ionic liquid and insulating particles are provided. Furthermore, a photoelectric conversion element comprising: a working electrode, the working electrode comprising an electrode substrate and an oxide semiconductor porous film formed on the electrode substrate and sensitized with a dye; a counter electrode disposed opposing the working electrode; and an electrolyte layer made of these electrolyte compositions is provided.10-08-2009
20090272431COUNTER ELECTRODE FOR A PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element including: (1) a window electrode having a transparent substrate and a semiconductor layer provided on a surface of the transparent substrate, a sensitizing dye being adsorbed on the semiconductor layer; (2) a counter electrode having a substrate and a conductive film, provided on a surface of the substrate, that is arranged so as to face the semiconductor layer of the window electrode, and wherein the counter electrode has carbon nanotubes provided on the substrate surface via the conductive film; and (3) an electrolyte layer disposed at least in a portion between the window electrode and the counter electrode.11-05-2009
20090293953ELECTROLYTE COMPOSITION, PHOTOELECTRIC CONVERSION ELEMENT USING THE SAME, AND DYE-SENSITIZED PHOTOVOLTAIC CELL - An electrolyte composition containing an ionic liquid and conductive particles, an electrolyte composition containing an ionic liquid and oxide semiconductor particles and optionally containing conductive particles, and an electrolyte composition containing an ionic liquid and insulating particles are provided. Furthermore, a photoelectric conversion element comprising: a working electrode, the working electrode comprising an electrode substrate and an oxide semiconductor porous film formed on the electrode substrate and sensitized with a dye; a counter electrode disposed opposing the working electrode; and an electrolyte layer made of these electrolyte compositions is provided.12-03-2009

Patent applications by Hiroki Usui, Tokyo JP