| Patent application number | Description | Published |
|---|
| 20080246529 | MULTI-CHANNEL SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal. | 10-09-2008 |
| 20080265972 | OUTPUT CIRCUIT AND MULTI-OUTPUT CIRCUIT - An output circuit includes a high-side transistor, a low-side transistor, a gate protection circuit, a level shift circuit, and a pre-driver circuit. The level shift circuit interrupts a current path from an output terminal to the level shift circuit after a predetermined time has passed since the high-side transistor was switched OFF. | 10-30-2008 |
| 20090045480 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a plurality of circuit cells on a semiconductor chip. The plurality of circuit cells are formed along a first chip side of the semiconductor chip. Each of the plurality of circuit cells has a pad. The semiconductor integrated circuit further includes a high voltage potential interconnect formed over the plurality of circuit cells. The high voltage potential interconnect has a width expanding in a length direction from a center portion to end portions of the high voltage potential interconnect. | 02-19-2009 |
| 20090085899 | CAPACITIVE LOAD DRIVING CIRCUIT AND PLASMA DISPLAY PANEL - A scan driving circuit includes: a shift register section receiving a scan data signal and a scan clock signal; a plurality of pulse width control circuits each receiving an output signal from the shift register section and a negative pulse width control signal to output a signal whose pulse width is controlled based on the negative pulse width control signal; a blanking section receiving the output signals from the plurality of pulse width control circuits and a blanking signal; and a plurality of high voltage output sections for amplifying the output signals from the plurality of pulse width control circuits, which are received via the blanking section, to successively output negative pulses each having a controlled pulse width to the scanning electrodes. | 04-02-2009 |
| 20090108434 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, PDP DRIVER, AND PLASMA DISPLAY PANEL - In a semiconductor integrated circuit device of the present invention, temperature increase of a bonding wire can be suppressed even when conductive leads are short-circuited with each other, and reliability of the semiconductor integrated circuit device is improved. The conductive leads of a resin package for supplying a power supply section of a semiconductor integrated circuit chip with power from an external power supply are connected with bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires. Furthermore, the conductive leads connected to a GND for supplying the power supply section of the semiconductor integrated circuit chip with a grounding potential are connected with the bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires. | 04-30-2009 |
| 20090167371 | CAPACITIVE LOAD DRIVING CIRCUIT - It is aimed to reduce the area of an output circuit in a capacitive load driving circuit capable of high voltage output, such as a PDP scan driver for driving a plasma display panel. To achieve this, there are provided an arbitrary number of N-type MOS transistors | 07-02-2009 |
| 20090195482 | PDP DRIVER AND SEMICONDUCTOR INTEGRATED CIRCUIT FOR DRIVING PDP - A PDP-driving semiconductor integrated circuit includes a plurality of PDP drivers each for converting an input signal into a high-voltage pulse having an amplitude greater than that of the input signal and outputting the high-voltage pulse. The PDP-driving semiconductor integrated circuit has a function of performing sequential operation in which the PDP drivers operate at different timings and sequentially output the high-voltage pulses and a function of performing simultaneous operation in which the PDP drivers operate at the same timing and output the high-voltage pulses at a time. In each of the sequential operation and the simultaneous operation, at least one of the speed of change in voltage level of the high-voltage pulse from a low level to a high level and the speed of change in voltage level of the high-voltage pulse from the high level to the low level is controlled. | 08-06-2009 |
| 20090273099 | SEMICONDUCTOR INTEGRATED CIRCUIT - On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side. | 11-05-2009 |
| 20090302347 | Semiconductor integrated circuit - A semiconductor integrated circuit includes a plurality of circuit cells each including a pad on a semiconductor chip. Each of the circuit cells includes a high-side transistor, a level shift circuit, a low-side transistor, a pre-driver, and a pad. The high-side transistor and the low-side transistor are arranged to face each other with the pad interposed therebetween. | 12-10-2009 |
| 20100214197 | CAPACITIVE-LOAD DRIVE DEVICE AND PDP DISPLAY APPARATUS - In a row-electrode drive circuit of a PDP display device, an N-channel MOS low-side transistor of an output section is in an ON state while a light emission of a capacitive load is sustained. Now, if power to a driver section is lost due to, for example, a disconnection of a line from an external power supply to a low-voltage power terminal, this loss of power is detected by a detection section, and a current path via a parasitic diode of a P-channel MOS transistor, which has turned off, in the driver section to the low-voltage power terminal is interrupted. As a result, the N-channel MOS low-side transistor of the output section has the charged electric charge of the capacitive load stored in a parasitic capacity between its drain and gate, so maintains the ON state. Therefore, even when power to the driver section is lost due to, for example, a disconnection of the line while a light emission of the capacitive load is sustained, a case where the low-side transistor of the output section turns off and breaks down is prevented. | 08-26-2010 |
| 20100264958 | OUTPUT CIRCUIT AND MULTI-OUTPUT CIRCUIT - An output circuit includes a high-side transistor, a low-side transistor, a gate protection circuit, a level shift circuit, and a pre-driver circuit. The level shift circuit interrupts a current path from an output terminal to the level shift circuit after a predetermined time has passed since the high-side transistor was switched OFF. | 10-21-2010 |
