Patent application number | Description | Published |
20080226177 | HIGH-ACCURACY PATTERN SHAPE EVALUATING METHOD AND APPARATUS - A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise. | 09-18-2008 |
20080272297 | Scanning electron microscope and CD measurement calibration standard specimen - A calibration standard specimen is provided to have formed therein calibrating patterns of a lattice shape discontinuously arrayed, and particular alignment patterns respectively disposed near the calibrating patterns so that the positioning of the specimen can be made to match the calibrating patterns to the measurement points. | 11-06-2008 |
20090046896 | LENGTH MEASUREMENT SYSTEM - Disclosed herewith is a length measurement system, which obtains a value closer to its true one when figuring out the size and edge roughness of a pattern from a noise-included pattern image. Among plural band-like regions representing a portion around an edge in an image respectively, the system calculates the dependency of the edge point position on the image processing parameter at each of a narrow width band-like portion and a wide width band-like portion to calculate an image processing condition that calculates each measured value closer to its true value or estimates the true value itself. | 02-19-2009 |
20090121134 | Tool-To-Tool Matching Control Method And its System For Scanning Electron Microscope - A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern formed on a wafer, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern formed on the wafer by using each of the plural scanning electron microscopes. | 05-14-2009 |
20090263024 | APPARATUS FOR DATA ANALYSIS - Edge points are extracted by specifying a height (values indicating a distance from a substrate) on a pattern when edges of the pattern are extracted from a CD-SEM image. Further, LER values obtained by the extraction or a Fourier spectrum of the LER are obtained. When the same sample is previously observed with the AFM and the CD-SEM, a size of the LER obtained by specifying a height, an auto-correlation distance of the LER, or an index called the spectrum is obtained from results of the AFM observation. Further, theses indices obtained by specifying image processing conditions for detecting the edge points from the CD-SEM observation result are obtained. Also, it is determined that heights providing values when the values are matched correspond to the image processing conditions and then, the edge points are extracted from the CD-SEM IMAGE instead of the AFM observation by using the image processing conditions. | 10-22-2009 |
20100038535 | Sample dimension measuring method and scanning electron microscope - The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions. | 02-18-2010 |
20100133426 | Sample and method for evaluating resolution of scanning electron microscope, and electron scanning microscope - A method of evaluating a resolution of a scanning electron microscope includes picking up a first image of a concave and convex pattern formed on a surface of a sample utilizing a first scanning electron microscope, picking up a second image of the concave and convex pattern on the sample utilizing a second scanning electron microscope, respectively processing the first image and the second image in order to evaluate unevenness in resolution between the first scanning electron microscope and the second scanning electron microscope, and determining whether a height of the concave and convex pattern as measured from a bottom thereof is sufficient so that no affection by a secondary electron emitted from the bottom of the concave and convex pattern is exhibited. | 06-03-2010 |
20110032176 | IMAGE FORMING METHOD AND CHARGED PARTICLE BEAM APPARATUS - An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines. | 02-10-2011 |
20110133080 | CHARGED PARTICEL BEAM APPARATUS AND METHODS FOR CAPTURING IMAGES USING THE SAME - The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses. | 06-09-2011 |
20110278453 | Tool-To-Tool Matching Control Method And Its System For Scanning Electron Microscope - A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern by using each of the plural scanning electron microscopes. | 11-17-2011 |
20120098954 | SEMICONDUCTOR INSPECTION DEVICE AND SEMICONDUCTOR INSPECTION METHOD USING THE SAME - Provided are a semiconductor inspection device and a semiconductor inspection method such that in a specimen image in a single field of view obtained by an electron microscope, it is possible to suppress variations in the edge position measurement error attributable to the materials and structures of the lower layers of measured patterns by a first method, wherein the area in the field of view obtained by electron beam scanning is divided into a plurality of regions on the basis of information regarding the structures and materials of the object to be observed and the electron beam scanning conditions are changed for individual regions ( | 04-26-2012 |
20130146763 | Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof - An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image. | 06-13-2013 |