| Patent application number | Description | Published |
|---|
| 20110175107 | SILICON CARBIDE SUBSTRATE - A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity. | 07-21-2011 |
| 20110175108 | LIGHT-EMITTING DEVICE - A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high. | 07-21-2011 |
| 20110198027 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized. | 08-18-2011 |
| 20110233561 | SEMICONDUCTOR SUBSTRATE - A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween. | 09-29-2011 |
| 20110262680 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A sublimation preventing layer is formed to cover a first region of a main surface of a material substrate. First and second single-crystal layers are arranged on the material substrate such that a gap between first and second side surfaces is located over the sublimation preventing layer. The material substrate and the first and second single-crystal layers are heated to sublimate silicon carbide from a second region of the main surface and recrystallize the sublimated silicon carbide on the first backside surface of the first single-crystal layer and the second backside surface of the second single-crystal layer, thereby forming a base substrate connected to each of the first and second backside surfaces. This can prevent formation of voids in a silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
| 20110262681 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A carbon layer is formed on a first region of a main surface of a material substrate. On the material substrate, first and second single-crystal layers are arranged such that each of a first backside surface of the first single-crystal layer and a second backside surface of the second single-crystal layer has a portion facing a second region of the main surface of the material substrate and such that a gap between a first side surface of the first single-crystal layer and a second side surface of the second single-crystal layer is located over the carbon layer. By heating the material substrate and the first and second single-crystal layers, a base substrate connected to each of the first and second backside surfaces is formed. In this way, voids can be prevented from being formed in the silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
| 20110272087 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - Upon arranging a base portion and first and second silicon carbide layers such that each of a first backside surface of the first silicon carbide layer and a second backside surface of the second silicon carbide layer faces a first main surface of the base portion, at least one of the first and second silicon carbide layers is partially projected as a projection to outside the first main surface when viewed in a planar view. Each of the first and second backside surfaces and the first main surface are connected to each other by heating. This heating carbonizes at least a part of the projection, thereby forming a carbonized portion. When removing the projection, the carbonized portion is processed. In this way, the planar shape of a silicon carbide substrate can be readily adjusted. | 11-10-2011 |
| 20110275224 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A material substrate is prepared which has a first surface and a second surface opposite to each other in a thickness direction and is made of silicon carbide. The material substrate is partially carbonized to divide the material substrate into a carbonized portion made of a material obtained by carbonizing silicon carbide, and a silicon carbide portion made of silicon carbide. This step of partially carbonizing the material substrate is performed to partially carbonize the second surface. In order to adjust a shape of the material substrate when viewed in a planar view, a portion of the material substrate is removed. This step of removing the portion of the material substrate includes the step of processing the carbonized portion. Accordingly, a silicon carbide substrate having a desired planar shape can be obtained readily. | 11-10-2011 |
