| Patent application number | Description | Published |
|---|
| 20100085030 | Semiconductor Device and RFID Tag Using the Semiconductor Device - A semiconductor device monitors a voltage between a reference potential and an input potential and obtains a constant output potential regardless of a value of the voltage, after the voltage exceeds a predetermined threshold voltage in such a manner that the semiconductor device divides a voltage between the reference potential and the input potential using a plurality of first non-linear elements and at least one linear element to constantly generate a first bias voltage regardless of a value of the voltage, divides a voltage between the reference potential and the input potential using a plurality of second non-linear elements with reference to the first bias voltage to constantly generate a second bias voltage regardless of a value of the voltage, and determines the output potential with reference to the second bias voltage. | 04-08-2010 |
| 20100181985 | Regulator Circuit and RFID Tag Including the Same - One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected. | 07-22-2010 |
| 20110025287 | REGULATOR CIRCUIT - An object of the present invention is to reduce variations in the value of the output potential VDD of a regulator circuit including a bias circuit referring threshold voltage. The regulator circuit includes a bias circuit referring threshold voltage, an error amplifier, an output control circuit, and a feedback voltage divider. Further, the regulator circuit uses an n-type transistor and p-type transistor which offer small variations in the value obtained by Vthn+|Vthp|. The feedback voltage divider includes a diode-connected p-type transistor. The increase in the threshold voltage Vthn of n-type transistors leads to the increase in the threshold voltage Vthp of the p-type transistor. Therefore, the on resistance of the p-type transistor is reduced. As a result, the fluctuations in the output potential VDD is suppressed. | 02-03-2011 |
| 20110133706 | DC CONVERTER CIRCUIT AND POWER SUPPLY CIRCUIT - A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×10 | 06-09-2011 |
| 20110156028 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 06-30-2011 |
| 20110198593 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of times of writing. In the semiconductor device, a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is provided in matrix and a wiring (also called a bit line) for connecting one memory cell to another memory cell and a source or drain electrode of the first transistor are electrically connected to each other through a source or drain electrode of the second transistor. Accordingly, the number of wirings can be smaller than that in the case where the source or drain electrode of the first transistor and the source or drain electrode of the second transistor are connected to different wirings. Thus, the degree of integration of the semiconductor device can be increased. | 08-18-2011 |
| 20110199807 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a first signal line, a second signal line, a memory cell, and a potential converter circuit. The memory cell includes a first transistor including a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region; a second transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region; and a capacitor. The first channel formation region and the second channel formation region include different semiconductor materials. The second drain electrode, one electrode of the capacitor, and the first gate electrode are electrically connected to one another. The second gate electrode is electrically connected to the potential converter circuit through the second signal line. | 08-18-2011 |
| 20110199816 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME - An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced. | 08-18-2011 |
