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| 20100085030 | Semiconductor Device and RFID Tag Using the Semiconductor Device - A semiconductor device monitors a voltage between a reference potential and an input potential and obtains a constant output potential regardless of a value of the voltage, after the voltage exceeds a predetermined threshold voltage in such a manner that the semiconductor device divides a voltage between the reference potential and the input potential using a plurality of first non-linear elements and at least one linear element to constantly generate a first bias voltage regardless of a value of the voltage, divides a voltage between the reference potential and the input potential using a plurality of second non-linear elements with reference to the first bias voltage to constantly generate a second bias voltage regardless of a value of the voltage, and determines the output potential with reference to the second bias voltage. | 04-08-2010 |
| 20100181985 | Regulator Circuit and RFID Tag Including the Same - One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected. | 07-22-2010 |
| 20110025287 | REGULATOR CIRCUIT - An object of the present invention is to reduce variations in the value of the output potential VDD of a regulator circuit including a bias circuit referring threshold voltage. The regulator circuit includes a bias circuit referring threshold voltage, an error amplifier, an output control circuit, and a feedback voltage divider. Further, the regulator circuit uses an n-type transistor and p-type transistor which offer small variations in the value obtained by Vthn+|Vthp|. The feedback voltage divider includes a diode-connected p-type transistor. The increase in the threshold voltage Vthn of n-type transistors leads to the increase in the threshold voltage Vthp of the p-type transistor. Therefore, the on resistance of the p-type transistor is reduced. As a result, the fluctuations in the output potential VDD is suppressed. | 02-03-2011 |
| 20110133706 | DC CONVERTER CIRCUIT AND POWER SUPPLY CIRCUIT - A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×10 | 06-09-2011 |
| 20110156028 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 06-30-2011 |
| 20110198593 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of times of writing. In the semiconductor device, a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is provided in matrix and a wiring (also called a bit line) for connecting one memory cell to another memory cell and a source or drain electrode of the first transistor are electrically connected to each other through a source or drain electrode of the second transistor. Accordingly, the number of wirings can be smaller than that in the case where the source or drain electrode of the first transistor and the source or drain electrode of the second transistor are connected to different wirings. Thus, the degree of integration of the semiconductor device can be increased. | 08-18-2011 |
| 20110199807 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a first signal line, a second signal line, a memory cell, and a potential converter circuit. The memory cell includes a first transistor including a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region; a second transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region; and a capacitor. The first channel formation region and the second channel formation region include different semiconductor materials. The second drain electrode, one electrode of the capacitor, and the first gate electrode are electrically connected to one another. The second gate electrode is electrically connected to the potential converter circuit through the second signal line. | 08-18-2011 |
| 20110199816 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME - An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced. | 08-18-2011 |
| 20110205775 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error. | 08-25-2011 |
| 20110205785 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor and the semiconductor device includes a potential conversion circuit which functions to output a potential lower than a reference potential for reading data from the memory cell. With the use of a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and capable of holding data for a long time can be provided. | 08-25-2011 |
| 20110227072 | SEMICONDUCTOR DEVICE - A semiconductor device including a nonvolatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that a predetermined amount of charge is held at the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential. | 09-22-2011 |
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| 20110175107 | SILICON CARBIDE SUBSTRATE - A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity. | 07-21-2011 |
| 20110175108 | LIGHT-EMITTING DEVICE - A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high. | 07-21-2011 |
| 20110198027 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized. | 08-18-2011 |
| 20110233561 | SEMICONDUCTOR SUBSTRATE - A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween. | 09-29-2011 |
| 20110262680 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A sublimation preventing layer is formed to cover a first region of a main surface of a material substrate. First and second single-crystal layers are arranged on the material substrate such that a gap between first and second side surfaces is located over the sublimation preventing layer. The material substrate and the first and second single-crystal layers are heated to sublimate silicon carbide from a second region of the main surface and recrystallize the sublimated silicon carbide on the first backside surface of the first single-crystal layer and the second backside surface of the second single-crystal layer, thereby forming a base substrate connected to each of the first and second backside surfaces. This can prevent formation of voids in a silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
| 20110262681 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A carbon layer is formed on a first region of a main surface of a material substrate. On the material substrate, first and second single-crystal layers are arranged such that each of a first backside surface of the first single-crystal layer and a second backside surface of the second single-crystal layer has a portion facing a second region of the main surface of the material substrate and such that a gap between a first side surface of the first single-crystal layer and a second side surface of the second single-crystal layer is located over the carbon layer. By heating the material substrate and the first and second single-crystal layers, a base substrate connected to each of the first and second backside surfaces is formed. In this way, voids can be prevented from being formed in the silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
| 20110272087 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - Upon arranging a base portion and first and second silicon carbide layers such that each of a first backside surface of the first silicon carbide layer and a second backside surface of the second silicon carbide layer faces a first main surface of the base portion, at least one of the first and second silicon carbide layers is partially projected as a projection to outside the first main surface when viewed in a planar view. Each of the first and second backside surfaces and the first main surface are connected to each other by heating. This heating carbonizes at least a part of the projection, thereby forming a carbonized portion. When removing the projection, the carbonized portion is processed. In this way, the planar shape of a silicon carbide substrate can be readily adjusted. | 11-10-2011 |
| 20110275224 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A material substrate is prepared which has a first surface and a second surface opposite to each other in a thickness direction and is made of silicon carbide. The material substrate is partially carbonized to divide the material substrate into a carbonized portion made of a material obtained by carbonizing silicon carbide, and a silicon carbide portion made of silicon carbide. This step of partially carbonizing the material substrate is performed to partially carbonize the second surface. In order to adjust a shape of the material substrate when viewed in a planar view, a portion of the material substrate is removed. This step of removing the portion of the material substrate includes the step of processing the carbonized portion. Accordingly, a silicon carbide substrate having a desired planar shape can be obtained readily. | 11-10-2011 |
| 20110278593 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible. | 11-17-2011 |
| 20110278594 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide. | 11-17-2011 |
| 20110278595 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container. | 11-17-2011 |
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| 20110242585 | METHOD FOR TRANSFERRING PACKAGE OF FILES AND RECORDING MEDIUM STORING THE METHOD - A method for transferring a package of files that is executed by a personal computer, the package of files being made up of plural compressed files that are separately present therein. For transferring the package of files, the personal computer creates, with respect to each printer, a dedicated file that is exclusively acceptable to similar-dedicated-file-compatible models of the printer; the personal computer treats the respective dedicated files as the plural files and creates the package of files by packaging the respective dedicated files in the package of files; and with respect to the respective dedicated files in the package of files, in transferring the package of files, when it is detected by the personal computer, that the personal computer is connected to the printer that is compatible with the dedicated file, the personal computer transfers the dedicated file in the package of files to the detected printer. | 10-06-2011 |
| 20110242588 | AUTOMATIC FILE TRANSFER SYSTEM AND STORAGE MEDIUM - An automatic file transfer system includes a personal computer and one or more printers. The automatic file transfer system includes a transfer folder capable of containing one or more files, wherein, when the personal computer recognizes, through plug-and-play, that a printer among the one or more printers which are connected to the personal computer is powered on, if the printer currently recognized is a transfer-target printer, the personal computer executes in a repetitive manner, for the printer currently recognized, processes of: (i) determining whether or not a new file is moved into the transfer folder; and (ii) transferring, if it is determined that a new file is moved into the transfer folder, the new file to the printer currently recognized. | 10-06-2011 |
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| 20110255325 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor. The memory cell includes a writing transistor, a reading transistor, and a selecting transistor. Using a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and holding data for a long time can be provided. | 10-20-2011 |
| 20110280061 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off. | 11-17-2011 |
| 20120012845 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably. | 01-19-2012 |
| 20120014157 | SEMICONDUCTOR DEVICE - A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region. | 01-19-2012 |
| 20120033484 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The semiconductor device is formed using a material which allows a sufficient reduction in off-state current of a transistor; for example, an oxide semiconductor material, which is a wide gap semiconductor, is used. When a semiconductor material which allows a sufficient reduction in off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error. | 02-09-2012 |
| 20120033485 | SEMICONDUCTOR DEVICE - In a semiconductor device which includes a bit line, m (m is a natural number of 3 or more) word lines, a source line, m signal lines, first to m-th memory cells, and a driver circuit, the memory cell includes a first transistor and a second transistor for storing electrical charge accumulated in a capacitor, and the second transistor includes a channel formed in an oxide semiconductor layer. In the semiconductor device, the driver circuit generates a signal to be output to a (j−1)th (j is a natural number of 3 or more) signal line with the use of a signal to be output to a j-th signal line. | 02-09-2012 |
| 20120033486 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed. | 02-09-2012 |
| 20120033487 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential. | 02-09-2012 |
| 20120033510 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in of state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided. | 02-09-2012 |
| 20120056647 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode. | 03-08-2012 |
| 20120063205 | SEMICONDUCTOR DEVICE - A semiconductor device in which stored data can be held even when power is not supplied and there is no limitation on the number of writing operations is provided. A semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, such as an oxide semiconductor material that is a wide-gap semiconductor. When a semiconductor material which can sufficiently reduce the off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, by providing a capacitor or a noise removal circuit electrically connected to a write word line, a signal such as a short pulse or a noise input to a memory cell can be reduced or removed. Accordingly, a malfunction in which data written into the memory cell is erased when a transistor in the memory cell is instantaneously turned on can be prevented. | 03-15-2012 |
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| 20110284873 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids. | 11-24-2011 |
| 20110306181 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside. | 12-15-2011 |
| 20120009761 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. | 01-12-2012 |
| 20120017826 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A supporting portion ( | 01-26-2012 |
| 20120070605 | SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE - An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes. | 03-22-2012 |
