| Patent application number | Description | Published |
|---|
| 20100233457 | FOAM DUSTPROOFING MATERIAL WITH A MICRO CELL STRUCTURE - To provide a dustproofing material having superior dustproofness and having such superior flexibility as to fit in a further minute clearance typically of 0.10 to 0.20 mm. | 09-16-2010 |
| 20100239836 | IMPACT-ABSORBING MATERIAL - The present invention relates to an impact-absorbing material including a foam having a thickness of from 0.1 to 1.0 mm, an average cell size of from 10 to 65 μm and a density of from 0.01 to 0.20 g/cm | 09-23-2010 |
| 20100300528 | Adhesive seal material for end portion of frameless solar cell module, frameless solar cell module, and sealed structure of end portion thereof - An adhesive seal material for an end portion of a frameless solar cell module is an adhesive sealing member for an end portion of a frameless solar cell module which is bonded to an end portion of a frameless solar cell module, and includes a base material and an adhesive layer formed on a surface of the base material. The base material includes a reinforcement layer having a top surface on which the adhesive layer is laminated, and a barrier layer formed on a back surface of the reinforcement layer. | 12-02-2010 |
| 20110088756 | Adhesive seal material for end portion of solar cell panel, sealed structure of end portion of solar cell panel, sealing method, solar cell module, and producing method thereof - An adhesive seal material for an end portion a solar cell panel is an adhesive seal material which is bonded to an end portion of a solar cell panel. The adhesive seal material includes a rubber-based adhesive layer, and a non-adhesive layer partially covering a surface of the rubber-based adhesive layer. | 04-21-2011 |
| Patent application number | Description | Published |
|---|
| 20100016458 | POLYOLEFIN RESIN FOAM AND PROCESS FOR PRODUCTION THEREOF - The present invention relates to a polyolefin resin foam which includes a polyolefin resin composition includes: (A) a rubber and/or a thermoplastic elastomer; (B) a polyolefin resin; and (C) at least one aliphatic compound selected from an aliphatic acid, an aliphatic acid amide and an aliphatic acid metallic soap, the compound having a polar functional group and having a melting point of 50 to 150° C., in which a content of the aliphatic compound is 1 to 5 parts by weight based on 100 parts by weight of the total amount of the rubber and/or thermoplastic elastomer and the polyolefin resin. The polyolefin resin foam of the invention is excellent in flexibility and cushioning properties, and has good processability, especially excellent cutting processability. | 01-21-2010 |
| 20100119812 | LIGHT-REFLECTING MEMBER CONTAINING POLYOLEFIN RESIN FOAM, AND METHOD FOR PRODUCING THE SAME - The present invention relates to a light-reflecting member including a polyolefin resin foam as a light-reflecting layer, the polyolefin resin foam being obtained by foam molding a resin composition containing a polyolefin resin. According to the light-reflecting member of the invention, since it has the above-mentioned constitution, the light-reflecting member is excellent in light reflection, impact-absorbing property, and lightness in weight. Moreover, the process for producing a light-reflecting member of the invention can provide a light-reflecting member excellent in light reflection, impact-absorbing property, and lightness in weight by using a polyolefin resin foam. | 05-13-2010 |
| Patent application number | Description | Published |
|---|
| 20080283914 | Semiconductor device and method for manufacturing the same - An impurity buried layer constructed by two buried regions formed by impurities of identical type exist, a buried region formed by an impurity having a slow diffusion speed is provided on the entire surface of a transistor formation region, and a buried region formed by an impurity having a fast diffusion speed is provided inwardly from beneath the inside end of an isolation insulating film serving as a region on which an electric field concentrates partially. | 11-20-2008 |
| 20080283967 | Semiconductor device - In a semiconductor device including a bipolar transistor, a base region has a two layer structure including a first base region, and a second base region which is provided around the first base region and has a lower impurity density than that of the first base region and has a shallower depth than that of the first base region. | 11-20-2008 |
| 20100078720 | Semiconductor device and method for manufacturing the same - There is provided a semiconductor device including a field effect transistor. The field effect transistor includes a p-type low concentration region formed over a surface of a substrate, an n-type drain-side diffusion region and an n-type source-side diffusion region formed over a surface of the p-type low concentration region, an element isolation insulating layer, and another element isolation insulating layer. A p-type high concentration region, which has an impurity concentration higher than the impurity concentration of the p-type low concentration region, is formed below the n-type source-side diffusion region in the p-type low concentration region over a range at least from one end, which is opposite to the other end facing to the channel region, of the source-side diffusion region to one end, which is facing to the channel region, of the second element isolation insulating layer, when seen in a plan view. | 04-01-2010 |
| 20100078721 | SEMICONDUCTOR DEVICE - A field-effect transistor ( | 04-01-2010 |
