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Hirokazu Matsumoto

Hirokazu Matsumoto, Ibaraki JP

Patent application numberDescriptionPublished
20090318365METASTIN DERIVATIVES AND USE THEREOF - The present invention provides a metastin derivative in which the amino acids comprising metastin were modified by alternative chemical substituents resulting in metastin derivatives, having excellent blood stability and exhibiting cancer metastasis inhibiting action or cancer growth inhibiting action.12-24-2009
20110052563GONADAL FUNCTION IMPROVING AGENTS - Metastin, compounds that promote the activity of metastin or its receptors and the like are excellent gonadal function improving agents, ovulation inducers or promoters, gonadotropic hormone secretion promoters, gonadotropic hormone secretion inhibitors, sex hormone secretion promoters, sex hormone secretion inhibitors, etc., and can be used as agents for preventing/treating sterility, hormone-sensitive cancers, endometriosis, etc. Metastin and its receptors are useful for screening for these pharmaceuticals.03-03-2011

Patent applications by Hirokazu Matsumoto, Ibaraki JP

Hirokazu Matsumoto, Ota-Ku JP

Patent application numberDescriptionPublished
20090197395METHOD OF MANUFACTURING DEVICE - A method of manufacturing a device includes: a laser beam-machined groove forming step of irradiating a wafer with a laser beam from the back side of the wafer along planned dividing lines so as to form laser beam-machined grooves along the planned dividing lines; an etching step of etching a back-side surface of the wafer having been subjected to the laser beam-machined groove forming step, so as to remove denatured layers formed at processed surfaces of the laser beam-machined grooves; an adhesive film attaching step of attaching an adhesive film to the back-side surface of the wafer having been subjected to the etching step, and adhering the adhesive film side of the wafer to a surface of a dicing tape; and an adhesive film rupturing step of expanding the dicing tape so as to rupture the adhesive film along individual devices.08-06-2009
20100297830LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER - A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm11-25-2010
20100297855DEVICE PROCESSING METHOD - A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm11-25-2010

Hirokazu Matsumoto, Tsukuba-Shi JP

Patent application numberDescriptionPublished
20090239839RECEPTOR ANTAGONIST - An agent for modulating the function of an RFRP receptor, characterized by containing either a compound represented by the formula (I)09-24-2009

Hirokazu Matsumoto, Tokyo JP

Patent application numberDescriptionPublished
20090191692Wafer processing method - A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a dividing groove in the laminate and the substrate along an intermediate portion between the first blocking groove and the second blocking groove formed in the street of the wafer by activating second laser beam application means.07-30-2009

Hirokazu Matsumoto, Yokohama JP

Patent application numberDescriptionPublished
20090138757FAILURE RECOVERY METHOD IN CLUSTER SYSTEM - There is provided a method executed in a cluster system comprising a first computer and at least one second computer that stores the data transmitted from the first computer. The method comprising the steps of: judging whether the failure-occurred processing is restarted by the first computer or the failure-occurred processing is switched over by the second computer based on the system information; receiving the stored data from the second computer and re-executing the processing in which the failure has occurred by the first computer, in the case of which it is judged that the processing in which the failure has occurred is restarted by the first computer; and executing, by the second computer, the processing in which the failure has occurred, in the case of which it is judged that the processing in which the failure has occurred is switched over by the at least one second computer.05-28-2009