| Patent application number | Description | Published |
|---|
| 20090160008 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device that includes an n-type semiconductor substrate and an upper electrode formed on an upper face of the semiconductor substrate and a method of manufacturing the semiconductor device are provided. A p-type semiconductor region is repeatedly formed in the semiconductor substrate in at least one direction parallel to the substrate plane so as to be exposed on an upper face of the semiconductor substrate. The upper electrode includes a metal electrode portion; and a semiconductor electrode portion made of a semiconductor material whose band gap is narrower than that of the semiconductor substrate. The semiconductor electrode portion is provided on each p-type semiconductor region exposed on the upper face of the semiconductor substrate. The metal electrode portion is in Schottky contact with an n-type semiconductor region exposed on the upper face of the semiconductor substrate, and is in ohmic contact with the semiconductor electrode portion. | 06-25-2009 |
| 20090230405 | Diode having Schottky junction and PN junction and method for manufacturing the same - A manufacturing method of a diode includes: forming a P type semiconductor film on a N type semiconductor layer with a crystal growth method; forming a first metallic film on the P type semiconductor film so that the first metallic film contacts the P type semiconductor film with an ohmic contact; forming a mask having an opening on the first metallic film; etching a part of the first metallic film and a part of the P type semiconductor film via the opening so that a part of the N type semiconductor layer is exposed; and forming a second metallic film on the part of the N type semiconductor layer so that the second metallic film contacts the N type semiconductor layer with a Schottky contact. | 09-17-2009 |
| 20090267082 | Semiconductor device and manufacturing method of the same - A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage. | 10-29-2009 |
| 20090269908 | Manufacturing method of a semiconductor device - A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide. | 10-29-2009 |
| 20100032730 | Semiconductor device and method of making the same - A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode. | 02-11-2010 |
| 20100244049 | Silicon carbide semiconductor device with schottky barrier diode and method of manufacturing the same - A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements. | 09-30-2010 |
| 20110151654 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step. | 06-23-2011 |
