| Patent application number | Description | Published |
|---|
| 20090130860 | Method of manufacturing a semiconductor device and processing apparatus - To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%. | 05-21-2009 |
| 20090197424 | Substrate processing apparatus and method for manufacturing semiconductor device - A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber. | 08-06-2009 |
| 20100009079 | Method for processing substrate and substrate processing apparatus - There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other. | 01-14-2010 |
| 20100035437 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus includes a substrate holder holding horizontally oriented and stacked substrates, an inner tube accommodating the substrate holder, an outer tube enclosing the inner tube, a gas nozzle installed in the inner tube, a gas injection hole formed in the gas nozzle, a source gas supply unit supplying source gas to an inside of the inner tube through the gas nozzle, a gas exhaust outlet formed in a sidewall of the inner tube, an exhaust unit exhausting a gap between the outer tube and the inner tube to create a gas stream inside the inner tube from the gas injection hole to the gas exhaust outlet, and a gas penetration preventing cylinder enclosing a region of the substrate holder lower than a region of the substrate holder where the substrates are stacked. | 02-11-2010 |
| 20100162952 | Substrate processing apparatus - Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube. | 07-01-2010 |
| 20110024875 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS - A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming an amorphous first insulating film comprising a first element on a substrate; adding a second element different from the first element to the first insulating film so as to form an amorphous second insulating film on the substrate; and annealing the second insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second insulating film. The concentration of the second element added to the first insulating film is controlled according to the annealing temperature. | 02-03-2011 |
