| Patent application number | Description | Published |
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| 20090134013 | METHOD FOR FORMING A TRANSPARENT ELECTROCONDUCTIVE FILM - A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al | 05-28-2009 |
| 20090134014 | Method for forming a transparent electroconductive film - A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al | 05-28-2009 |
| 20090173945 | METHOD FOR FORMING CONDUCTIVE FILM, THIN-FILM TRANSISTOR, PANEL WITH THIN-FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular. | 07-09-2009 |
| 20090184322 | ELECTROCONDUCTIVE FILM-FORMING METHOD, A THIN FILM TRANSISTOR, A THIN FILM TRANSISTOR-PROVIDED PANEL AND A THIN FILM TRANSISTOR-PRODUCING METHOD - An electroconductive film having high adhesion and a low resistivity is formed. An electroconductive film composed mainly of copper and containing an addition metal such as Ti is formed by sputtering a target composed mainly of copper in a vacuum atmosphere into which a nitriding gas is introduced. Such an electroconductive film has high adhesion to a silicon layer and a substrate, and is hardly peeled from the substrate. Further, since the electroconductive film has a low resistivity and a low contact resistance to a transparent electroconductive film, the electric characteristics do not degrade even when it is used as an electrode film. The electroconductive film formed by the present invention is suitable particularly as a barrier film for an electrode of a TFT or a semiconductor element. | 07-23-2009 |
| 20090236603 | PROCESS FOR FORMING A WIRING FILM, A TRANSISTOR, AND AN ELECTRONIC DEVICE - A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by introducing an oxygen gas into a vacuum chamber in which the object to form a film thereon and sputtering a pure copper target. Then, after the introduction of the oxygen gas is stopped, a low-resistance film made of pure copper is formed by sputtering the pure copper target. Since the barrier film and the low-resistance film have copper as the main component, they can be patterned at a time. Since the low-resistance film has a resistance lower than that of the barrier film, the resistance of the entire wiring film is reduced. Since the barrier layer has high adhesion to glass and silicon, the entire wiring film has high adhesion. | 09-24-2009 |
| 20090303406 | METHOD FOR FORMING WIRING FILM, TRANSISTOR AND ELECTRONIC DEVICE - A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films. | 12-10-2009 |
| 20100013787 | TOUCH PANEL, AND METHOD FOR MANUFACTURING TOUCH PANEL - A highly durable touch panel is provided. A touch panel according to the present invention includes a deformable flexible panel, and a transparent electrode film containing In | 01-21-2010 |
| 20100141878 | METHOD FOR PRODUCING COLOR FILTER, COLOR FILTER, LIQUID CRYSTAL DISPLAY DEVICE AND PRODUCING APPARATUS - Exfoliation of an etching stopper is prevented. A color filter of the present invention includes an inorganic protection film (etching stopper) composed mainly of SnO | 06-10-2010 |
| 20100295811 | TOUCH PANEL AND METHOD FOR MANUFACTURING TOUCH PANEL - A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken. | 11-25-2010 |
| 20110089026 | TOUCH PANEL MANUFACTURING METHOD AND FILM FORMATION APPARATUS - A touch panel manufacturing method is a method for manufacturing a touch panel including a transparent substrate having a main surface on which a transparent-electroconductive film is formed. The transparent-electroconductive film is formed on the main surface of the transparent substrate by carrying out sputtering using a target made of a zinc oxide-based material in a reactive gas atmosphere containing two or three gases selected from a group consisting of hydrogen gas, oxygen gas, and water vapor. | 04-21-2011 |
| 20110108114 | SOLAR CELL AND METHOD OF MANUFACTURING SAME - This solar cell has: a light transmissive first electrode; a photoelectric conversion layer formed of silicon; a light transmissive buffer layer; and a second electrode formed of a light reflective alloy. The second electrode is formed of a silver alloy including silver (Ag) as a main component with at least one of tin (Sn) and gold (Au) contained therein. | 05-12-2011 |
