Patent application number | Description | Published |
20080202248 | PRESSURE SENSOR - In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance. | 08-28-2008 |
20080204185 | PRESSURE SENSOR - A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges. | 08-28-2008 |
20100270629 | PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF - The pressure sensor according to the present invention has a sensor chip having a first semiconductor layer that has an opening portion, and a second semiconductor layer, formed on the first semiconductor layer, having a recessed portion that forms a diaphragm and a base, having a pressure guiding hole that is connected to the opening portion, bonded to the sensor chip. The recessed portion in the second semiconductor layer is larger than the opening portion of the first semiconductor layer. The opening portion of the first semiconductor layer has an opening diameter on the second semiconductor layer side that is larger than the opening diameter on the base side. | 10-28-2010 |
20100314701 | PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF - A pressure sensor is provided with a sensor chip having a first semiconductor layer and a second semiconductor layer wherein a pressure-sensitive region is a diaphragm. In the pressure-sensitive region, an open section is formed on the first semiconductor layer, and a recessed section is formed on the second semiconductor layer in the pressure-sensitive region. The recessed section on the second semiconductor layer is larger than the opening section on the first semiconductor layer. An insulating layer may be arranged between the first semiconductor layer and the second semiconductor layer. | 12-16-2010 |
20110000304 | PRESSURE SENSOR AND MANUFACTURING METHOD - A semiconductor substrate, provided with a differential pressure diaphragm, and a glass pedestal, which is provided on the bottom side of the semiconductor substrate, are provided, wherein: the bottom surface of the semiconductor substrate and the top surface of the glass pedestal are bonded together; a pressure introducing hole is formed in the glass pedestal so as to pass through the glass pedestal, connecting between the top and bottom surfaces of the glass pedestal; the pressure introducing hole is formed with a first diameter for the pressure introducing hole at the bottom surface of the glass pedestal from the bottom surface of the glass pedestal to a first position; and a second diameter for the pressure introducing hole at the top surface of the glass pedestal is larger than the first diameter; where a metal thin film layer is deposited on the bottom surface of the glass pedestal. | 01-06-2011 |
20110001199 | PRESSURE SENSOR AND PRESSURE SENSOR MANUFACTURING METHOD - A pressure sensor having a second semiconductor layer wherein is formed diffused resistance interconnections, an insulating layer that is formed on top of the second semiconductor layer, and external conducting portions that are formed on top of the insulating layer, wherein contacts for connecting electrically between the external conducting portions and the diffused resistance interconnections are formed in the insulating layer, and wherein the external conducting portions are formed in ranges corresponding to the ranges wherein the diffused resistance interconnections are formed in the second semiconductor layer. | 01-06-2011 |
20110247421 | PRESSURE SENSOR - A pressure sensor comprising: a sensor chip; a differential pressure diaphragm provided in the center portion of the sensor chip; a differential pressure gauge provided in the differential pressure diaphragm; a static pressure diaphragm provided at the outer peripheral portion of the differential pressure diaphragm; a first static pressure gauge formed at an edge portion of the static pressure diaphragm; and a second static pressure gauge formed at a center portion of the static pressure diaphragm. | 10-13-2011 |
20110247422 | PRESSURE SENSOR - A pressure sensor including a sensor chip; a differential pressure diaphragm provided in the center portion of the sensor chip; a first differential pressure gauge formed along a radial direction relative to the center of the differential pressure diaphragm, provided on a first edge of the differential pressure diaphragm; a second differential pressure gauge formed along a circumferential direction, which is perpendicular to the radial direction, provided in the vicinity of the first differential pressure gauge on the first edge of the differential pressure diaphragm; and a static pressure diaphragm disposed between an edge portion of the sensor chip and one of the edges, other than the first edge, of the differential pressure diaphragm, provided to the outside of the differential pressure diaphragm. | 10-13-2011 |