Patent application number | Description | Published |
20090121775 | TRANSISTOR AND METHOD FOR OPERATING THE SAME - In a transistor, an AlN buffer layer | 05-14-2009 |
20100090250 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride. | 04-15-2010 |
20100097105 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack | 04-22-2010 |
20100237967 | CIRCUIT DEVICE - A circuit device includes a substrate 11, and a transmission line | 09-23-2010 |
20100327320 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum. | 12-30-2010 |
20110049574 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first group III-V nitride semiconductor layer, a second group III-V nitride semiconductor layer having a larger band gap than the first group III-V nitride semiconductor layer and at least one ohmic electrode successively formed on a substrate. The ohmic electrode is formed so as to have a base portion penetrating the second group III-V nitride semiconductor layer and reaching a portion of the first group III-V nitride semiconductor layer disposed beneath a two-dimensional electron gas layer. An impurity doped layer is formed in portions of the first group III-V nitride semiconductor layer and the second group III-V nitride semiconductor layer in contact with the ohmic electrode. | 03-03-2011 |
20130232462 | EQUIVALENT CIRCUIT OF BIDIRECTIONAL SWITCH, SIMULATION METHOD FOR BIDIRECTIONAL SWITCH, AND SIMULATION DEVICE FOR BIDIRECTIONAL SWITCH - Provided is a simulation method for simulating electrical properties of a bidirectional switch formed as a single element and having a double gate structure. A simulation is performed using an equivalent circuit having a symmetrical structure in which a drain electrode of a JFET and a drain electrode of another JFET are connected via a resistor. | 09-05-2013 |
20130234791 | EQUIVALENT CIRCUIT OF SEMICONDUCTOR DEVICE, SIMULATION METHOD FOR SEMICONDUCTOR DEVICE, AND SIMULATION DEVICE FOR SEMICONDUCTOR DEVICE - An equivalent circuit includes: a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; a second transistor having a second gate electrode, a second drain electrode, and a second source electrode electrically connected to the first drain electrode; and a charging and discharging circuit which includes a first capacitor having a terminal electrically connected to the second gate electrode and another terminal electrically connected to the second source electrode, and charges and discharges the first capacitor with predetermined time constants. | 09-12-2013 |
Patent application number | Description | Published |
20090146866 | WIRELESS APPARATUS, WIRELESS COMMUNICATION SYSTEM, CONTROL METHOD, AND CONTROL PROGRAM - A wireless apparatus which can realize a DFS function that avoidance of interference with radar is considered in an Ad-Hoc mode under a multihop circumstance is provided. A Beacon frame is transmitted at a shorter interval than a previously set interval when radar is detected by wireless apparatuses N | 06-11-2009 |
20100302671 | MAGNETIC RECORDING DEVICE, HEAD EVALUATION DEVICE, AND WRITE-POLE-ERASING EVALUATION METHOD - According to one embodiment, a magnetic recording device includes a write controller to control such that writing first information having a same polarity throughout the first information in a predetermined region including a plurality of tracks in a recording medium, writing second information in a target track located within or close to the predetermined region, and writing third information having, at an end of the writing, a polarity opposite to the polarity of the first information in a region of the target track in which the second information is not written, are performed; a read controller to control such that the second information is read after each of writing of the second information and writing of the third information; and a determiner to determine occurrence of pole erasing based on each second information read under the control by the read controller. | 12-02-2010 |
20110317301 | NONLINEARITY MEASUREMENT APPARATUS, NONLINEARITY MEASUREMENT METHOD, AND MAGNETIC RECORDING AND REPRODUCTION APPARATUS - According to one embodiment, a non-linearity measurement apparatus includes a first measurement module, a second measurement module, and a calculation module. The first measurement module is configured to measure a component of a first higher harmonic from a reproduced signal of a first signal recorded on a magnetic recording medium. The second measurement module is configured to measure a component of a second higher harmonic from a reproduced signal of a second signal recorded on the magnetic recording medium. The calculation module is configured to calculate a non-linear transition shift of the magnetic recording medium by calculating an arcsine function of a value obtained by dividing the component of the second higher harmonic by the component of the first higher harmonic. | 12-29-2011 |
20120316758 | ENGINE CONTROL APPARATUS - An engine control apparatus includes a target air volume calculator which calculates a target air volume required by an engine, and an actual air volume calculator which calculates an actual air volume inhaled into a cylinder of the engine. The apparatus further includes an estimator which calculates the estimated value of subsequent actual air volume on the basis of a time lag from a time when the target air volume is calculated to a time when the actual air volume reaches the target air volume. The apparatus can accurately estimate an intake air volume inhaled into the cylinder to improve the controllability of the engine. | 12-13-2012 |