| Patent application number | Description | Published |
|---|
| 20090121775 | TRANSISTOR AND METHOD FOR OPERATING THE SAME - In a transistor, an AlN buffer layer | 05-14-2009 |
| 20100090250 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride. | 04-15-2010 |
| 20100097105 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack | 04-22-2010 |
| 20100237967 | CIRCUIT DEVICE - A circuit device includes a substrate 11, and a transmission line | 09-23-2010 |
| 20100327320 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum. | 12-30-2010 |
| 20110049574 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first group III-V nitride semiconductor layer, a second group III-V nitride semiconductor layer having a larger band gap than the first group III-V nitride semiconductor layer and at least one ohmic electrode successively formed on a substrate. The ohmic electrode is formed so as to have a base portion penetrating the second group III-V nitride semiconductor layer and reaching a portion of the first group III-V nitride semiconductor layer disposed beneath a two-dimensional electron gas layer. An impurity doped layer is formed in portions of the first group III-V nitride semiconductor layer and the second group III-V nitride semiconductor layer in contact with the ohmic electrode. | 03-03-2011 |
| Patent application number | Description | Published |
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| 20090146866 | WIRELESS APPARATUS, WIRELESS COMMUNICATION SYSTEM, CONTROL METHOD, AND CONTROL PROGRAM - A wireless apparatus which can realize a DFS function that avoidance of interference with radar is considered in an Ad-Hoc mode under a multihop circumstance is provided. A Beacon frame is transmitted at a shorter interval than a previously set interval when radar is detected by wireless apparatuses N | 06-11-2009 |
| 20100302671 | MAGNETIC RECORDING DEVICE, HEAD EVALUATION DEVICE, AND WRITE-POLE-ERASING EVALUATION METHOD - According to one embodiment, a magnetic recording device includes a write controller to control such that writing first information having a same polarity throughout the first information in a predetermined region including a plurality of tracks in a recording medium, writing second information in a target track located within or close to the predetermined region, and writing third information having, at an end of the writing, a polarity opposite to the polarity of the first information in a region of the target track in which the second information is not written, are performed; a read controller to control such that the second information is read after each of writing of the second information and writing of the third information; and a determiner to determine occurrence of pole erasing based on each second information read under the control by the read controller. | 12-02-2010 |
| 20110317301 | NONLINEARITY MEASUREMENT APPARATUS, NONLINEARITY MEASUREMENT METHOD, AND MAGNETIC RECORDING AND REPRODUCTION APPARATUS - According to one embodiment, a non-linearity measurement apparatus includes a first measurement module, a second measurement module, and a calculation module. The first measurement module is configured to measure a component of a first higher harmonic from a reproduced signal of a first signal recorded on a magnetic recording medium. The second measurement module is configured to measure a component of a second higher harmonic from a reproduced signal of a second signal recorded on the magnetic recording medium. The calculation module is configured to calculate a non-linear transition shift of the magnetic recording medium by calculating an arcsine function of a value obtained by dividing the component of the second higher harmonic by the component of the first higher harmonic. | 12-29-2011 |
