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Hiroaki Tanaka

Hiroaki Tanaka, Miyagi JP

Patent application numberDescriptionPublished
20110073922CONTACT FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating implanted ions after the ion-implanting step, and forming a silicide of a metal of the metal film by causing the metal to react with the Si layer portion by heating. It is desired to simultaneously perform the step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed.03-31-2011
20110198702Contact Formation Method, Semiconductor Device Manufacturing Method, and Semiconductor Device - A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.08-18-2011

Hiroaki Tanaka, Osaka JP

Patent application numberDescriptionPublished
20100053776Imaging Lens and Small-Size Image Pickup Apparatus using the Same - There are provided an imaging lens, which is capable of promoting high definition and miniaturization of a small-size image pickup apparatus, and the small-size image pickup apparatus using the same. A aperture diaphragm S is arranged between a first lens L03-04-2010
20100187860CAB AND CONSTRUCTION MACHINE - A cab includes left and right rear pole members having internal spaces and prescribed shapes in cross-section. The right rear pole member includes a first hole portion that extends along the longitudinal direction of the right rear pole member and penetrates the right rear pole member in the left-and-right direction of the right rear pole member, and a first plate-shaped member inserted into and secured in the first hole portion.07-29-2010
20110057479CAB FOR CONSTRUCTION MACHINE - A cab for a construction machine includes a pillar member and a beam member. The pillar member is disposed generally along a vertical direction, and includes a cutout portion and a protruding portion. The cutout portion is formed on an upper end thereof. The protruding portion is formed on the upper end on an inner side of the cutout portion with respect to a widthwise direction of the cab. The beam member is disposed generally along a direction perpendicular to the vertical direction. The beam member is joined to the pillar member with the beam member partially overlapping the cutout portion on the upper end of the pillar member in a plan view, and a lateral surface of the beam member abutting against the protruding portion.03-10-2011
20110273611Single-Focus Optical System, Image Pickup Device, and Digital Apparatus - Provided is a single-focus optical system which is configured, in order from the object side to the image side, of a first to third lens groups and in which the first lens group and the third lens group are fixed with respect to a predetermined imaging surface, and the second lens group is moved in the optical axis direction to focus, wherein the first lens group comprises at least one positive lens and at least one negative lens, the second lens group comprises at least one positive lens, the third lens group comprises at least one lens having at least one aspheric surface and having a positive optical power at a peripheral portion thereof, and 5<|Δv11-10-2011

Hiroaki Tanaka, Kanagawa JP

Patent application numberDescriptionPublished
20080280385Thin-film transistor, TFT-array substrate, liquid-crystal display device and method of fabricating the same - A thin-film transistor includes a gate layer, a gate insulting layer, a semiconductor layer, a drain layer, a passivation layer (each of which being formed on or over an insulating substrate), and a conductive layer formed on the passivation layer. The conductive layer is connected to the gate layer or the drain layer by way of a contact hole penetrating at least the passivation layer. The passivation layer has a multiple-layer structure comprising at least a first sublayer and a second sublayer stacked, the first sublayer having a lower etch rate than that of the second sublayer. The first sublayer is disposed closer to the substrate than the second sublayer. The second sublayer has a thickness equal to or less than that of the conductive layer. The shape or configuration of the passivation layer and the underlying gate insulating layer can be well controlled in the etching process, and the conductive layer formed on the passivation layer is prevented from being divided.11-13-2008
20080287038Polishing composition for semiconductor wafer, method for production thereof and polishing method - The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.11-20-2008
20080311750Polishing composition for semiconductor wafer and polishing method - The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.12-18-2008
20090209070METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR HAVING A MICRO-CRYSTALLINE SILICON HYDROGEN FEEDING LAYER FORMED BETWEEN A METAL GATE AND A GATE INSULATING FILM. - A TFT (Thin Film Transistor) is provided in which a hydrogen feeding layer is able to be formed in a position where diffusing distance of hydrogen can be made short without causing an increase in photolithography processes. In the TFT, the hydrogen feeding layer to diffuse hydrogen into a dangling bond existing at an interface between a polycrystalline silicon thin film and a gate insulating film is formed in a position between the gate insulating film and a gate electrode. According to this configuration, diffusing distance of hydrogen at a period of time during hydrogenation can be made short and the hydrogenation process can be sufficiently performed without taking time in heat treatment.08-20-2009
20090278968SOLID STATE IMAGING APPARATUS, SOLID STATE IMAGING DEVICE DRIVING METHOD AND CAMERA - A solid state imaging apparatus includes a solid state imaging device and a control circuit for performing control such that a first clock signal applied to transfer signal charges for a time period from after a preceding signal charge has been read out from a light sensing unit to when the preceding signal charge is transferred to a horizontal transfer unit and a second clock signal applied for a time period from after the preceding signal charge has been transferred to the horizontal transfer unit to when a succeeding signal charge is read out from the light sensing unit have almost the same amplitude and a high level potential of the first clock signal is set higher than that of the second clock signal.11-12-2009
20110034622AQUEOUS DISPERSION AND AQUEOUS COATING COMPOSITION, AND PROCESS OF FORMING COATING FILM - It is an object of the present invention to provide an aqueous dispersion of acrylic modified starch with excellent long-term storage stability, as well as an aqueous coating composition that can form a coated film with excellent finished appearance, curability and weather resistance, obtained using the dispersion.02-10-2011
20110258367MEMORY SYSTEM, CONTROL METHOD THEREOF, AND INFORMATION PROCESSING APPARATUS - According to the embodiment, a nonvolatile semiconductor memory that includes a plurality of banks capable of operating in parallel, a command analyzing unit that, upon receiving a power management command from a host, analyzes the received power management command, and a recording control unit that dynamically and variably controls an upper limit of the number of banks to be operated in parallel at a time of writing in accordance with an analysis result by the command analyzing unit are included, thereby suppressing the upper limit of a power consumption in accordance with an instruction from the host.10-20-2011
20120008025SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.01-12-2012

Patent applications by Hiroaki Tanaka, Kanagawa JP

Hiroaki Tanaka, Toyota-Shi JP

Patent application numberDescriptionPublished
20110003215FUEL CELL SYSTEM - There is disclosed a fuel cell system capable of drying a fuel cell in a short time after a system stop instruction is issued. The fuel cell system includes a controller to control the execution of a normal operation and a dry operation which decreases the water content of the fuel cell as compared with the normal operation. The controller executes the dry operation prior to the system stop instruction so that the water content of the fuel cell is decreased as compared with the normal operation at a time of the system stop instruction. The controller may execute the dry operation before the system stop instruction in a case where it is predicted that the temperature of the fuel cell at the system stop or the next system start is a predetermined low temperature.01-06-2011

Hiroaki Tanaka, Tokyo JP

Patent application numberDescriptionPublished
20090269057WAVELENGTH ROUTE SELECTION SYSTEM AND WAVELENGTH ROUTE SELECTION METHOD - A wavelength route selection system includes an inhibition route setting unit determining, for each of the spans, whether or not the span reliability exceeds the upper limit value, and extracting, as second wavelength routes, routes based on spans, the span reliability of which is determined to exceed the upper limit value, from among wavelength routes from the node device as the start point to the node device as the end point. The system further includes a route reliability calculation unit adding, for each of the second wavelength routes extracted by the inhibition route setting unit, the span reliabilities of all the spans in the corresponding second wavelength route calculated so as to calculate a wavelength route reliability representing the reliability of the second wavelength route. The system further includes a route selection unit selecting a second wavelength route having a minimum wavelength route reliability calculated by the route reliability calculation unit from among the second wavelength routes as the first wavelength route.10-29-2009
20100130661RESIN COMPOSITION FOR OPTICAL MEMBER AND OPTICAL MEMBER OBTAINED FROM THE SAME - The present invention can provide a composition for optical members, which contains (a) a compound having one or more of any group selected from the group consisting of an acryloyl group, a methacryloyl group, an allyl group and a vinyl group and one or more β-epithiopropyl groups in a molecule. In a preferable embodiment of the present invention, the composition for optical members further contains at least one compound selected from (b) a compound having one or more β-epithiopropyl groups in a molecule while having no polymerizable unsaturated bond group, (c) an inorganic compound having a sulfur atom and/or a selenium atom, (d) a compound having one or more thiol groups in a molecule, (e) a compound having one or more amino groups in a molecule while having no heterocyclic ring, and (f) a compound having one or more of at least one group selected from the group consisting of a vinyl group, an acryloyl group, a methacryloyl group and an allyl group in a molecule.05-27-2010
20100299472MULTIPROCESSOR SYSTEM AND COMPUTER PROGRAM PRODUCT - In a multiprocessor system including a plurality of processors, the processors execute, at a time of migration a task operating in own processor to another processor, a transmitting task for transmitting the migration target task to a destination processor, and when an interrupt request to be received and executed by an interrupt handler accompanying the migration target task is generated during transmission of the migration target task, the transmitting task receives the interrupt request instead of the interrupt handler and starts the interrupt handler.11-25-2010
20110317999WAVELENGTH DIVISION MULTIPLEX DEVICE, WAVELENGTH DIVISION MULTIPLEX TRANSMISSION SYSTEM, AND WAVELENGTH MULTIPLEX SIGNAL CONTROL METHOD - To provide a wavelength division multiplex device capable of detecting an abnormality in counting of a wavelength number of a wavelength multiplex signal transmitted and received between two opposing devices. When a comparison result of a wavelength number information comparison unit 12-29-2011

Patent applications by Hiroaki Tanaka, Tokyo JP

Hiroaki Tanaka, Hadano-Shi JP

Patent application numberDescriptionPublished
20100149867NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a nonvolatile memory which includes a block having a plurality of memory cell groups, each of the memory cell groups being electrically connected to a plurality of bit lines and electrically connected to a common word line, each memory cell being recordable of a plurality of bits, a first register which stores information obtained by correcting first data to be written to a first word line, and a control circuit which sets a set potential in the first register and writes the bits to a write target first memory cell at a time using the information in the first register, the set potential being obtained by subtracting, from a target potential to be finally set in the first memory cell, a potential increase which is generated by setting a potential in an unwritten second memory cell adjacent to the first memory cell.06-17-2010
20100254187MEMORY SYSTEM AND CONTROL METHOD THEREOF - A memory system includes a cell array including a plurality of nonvolatile memory cells electrically connected to a common word line, each memory cell storing a plurality of bits including a plurality of potential ranks, and a controller measuring a potential of the memory cell for each potential rank and changing a lower limit and upper limit of the potential rank based on the measurement result.10-07-2010

Hiroaki Tanaka, Aichi-Ken JP

Patent application numberDescriptionPublished
20100025725SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF - A semiconductor device has a drift region (02-04-2010
20100207234SEMICONDUCTOR DEVICE AND WIRE BONDING METHOD - A semiconductor device (08-19-2010

Hiroaki Tanaka, Toshima-Ku JP

Patent application numberDescriptionPublished
20100179325COMPOUND HAVING 11BETA-HSD1 INHIBITORY ACTIVITY - The present invention provides compounds having excellent 11β-HSD1 inhibitory activity.07-15-2010

Hiroaki Tanaka, Ayase-Shi JP

Patent application numberDescriptionPublished
20080237535Composition for polishing semiconductor wafer, and method of producing the same - A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C):10-02-2008
20090253813Colloidal silica consisting of silica particles fixing nitrogen contained alkaline compound - A colloidal silica comprising, silica particles inside of which or on the surface of which a nitrogen containing alkaline compound is fixed, wherein said silica particles are prepared by forming and growing colloid particles using the nitrogen containing alkaline compound. Said colloidal silica can be prepared by preparing active silicic acid aqueous solution contacting silicate alkali aqueous solution with cation exchange resin, adding the nitrogen containing alkaline compound and heating, and then growing up particles by build-up method.10-08-2009
20090267021Colloidal silica for semiconductor wafer polishing and production method thereof - Colloidal silica forming nonspherical particles cluster, whose long axis/short axis ratio of silica particles is of 1.2 to 20, and average long axis/short axis ratio of 3 to 15. This colloidal silica can be produced by forming particles by adding basic nitrogen compounds to an active silicic acid aqueous solution, the solution which produced by hydrolysis of tetraalkoxysilane, while heating, then growing particles by using a build up method.10-29-2009
20100163786Polishing composition for semiconductor wafer - A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide.07-01-2010

Patent applications by Hiroaki Tanaka, Ayase-Shi JP

Hiroaki Tanaka, Shinjuku-Ku JP

Patent application numberDescriptionPublished
20090257929Device and method for forming macromolecule crystal - Disclosed is a macromolecule-crystal forming apparatus and method capable of obtaining a macromolecule crystal in a simplified and efficient manner. The device comprises a first container containing a sample of macromolecule, a second container containing a gel acting as a buffer material during the crystallization of the macromolecule, and a third container containing a precipitant solution having a function of facilitating the aggregation of molecules during the crystallization of the macromolecule. These containers are connected together in a given manner so as to allow the macromolecule sample and the precipitant to be brought into contact with one another through the gel to induce the crystallization of the macromolecule.10-15-2009

Hiroaki Tanaka, Kariya-City JP

Patent application numberDescriptionPublished
20090071259Pressure Sensor and Manufacturing Method Thereof - A pressure sensor for a pressure medium includes: a sensor chip (03-19-2009

Patent applications by Hiroaki Tanaka, Kariya-City JP

Hiroaki Tanaka, Gunma JP

Patent application numberDescriptionPublished
20090011242Carbon Commutator and Process for Producing the Same - A commutator utilizing a carbon composite base material, the carbon composite base material including a carbon base material; and an iron layer. The iron layer, to which a metal material can be joined, is formed on a surface of the carbon base material, iron powders, which are used to form the iron layer, are subjected to a treatment so as to increase surface-adsorbed oxygen before placing the iron powders to the surface of the carbon base material that is formed in advance by sintering, and sintering is applied to the iron powders placed on the surface of the carbon base material at a temperature not less than a diffusion temperature of carbon and not more than a melting point of iron in order to form the iron layer on the surface of the carbon base material.01-08-2009

Hiroaki Tanaka, Fukuoka JP

Patent application numberDescriptionPublished
20080266436TRANSFER PULSE SUPPLYING CIRCUIT - A transfer pulse supplying circuit for supplying transfer pulses to a solid-state imaging apparatus including a charge transfer unit includes N (N is an integer of two or more) transfer pulse supplying wirings to which the transfer pulses are supplied, and lead-in wirings connecting the transfer pulse supplying wirings to corresponding lead-out wirings from the charge transfer unit. The respective lead-in wirings have almost the same width and length as one another. At least part of the lead-in wirings is divided into a first region and a second region by slits, and the first region is connected to the transfer pulse supplying wirings and the lead-out wiring, the second region is connected to the lead-out wiring. Regions of the respective lead-in wirings connected to the transfer pulse supplying wirings have almost the same ratio of width to length as one another.10-30-2008

Patent applications by Hiroaki Tanaka, Fukuoka JP

Hiroaki Tanaka, Osaka-Shi JP

Patent application numberDescriptionPublished
20110190497Process for production of 2,5 dioxopyrrolidine 3 carboxylate - The present invention provides a novel intermediate which enable to prepare tetrahydropyrrolo[1,2-a]pyrazin-4-spiro-3′-pyrrolidine derivatives such as Ranirestat being promising therapeutic agents for diabetic complications in a short process and in an economically advantageous and safe manner, and a process for preparing the same. That is, the present invention provides a process for preparing a compound of the following formula (I) wherein R08-04-2011

Hiroaki Tanaka, Nissin-Shi JP

Patent application numberDescriptionPublished
20120007139SEMICONDUCTOR DEVICE - The present teachings provides a bipolar semiconductor device comprising: a main cell region consisting of a trench gate type element region; and a sense cell region including a planar gate type element region.01-12-2012

Hiroaki Tanaka, Kawasaki-Shi JP

Patent application numberDescriptionPublished
20120059612DEVICE AND METHOD FOR MEASURING SURFACE CHARGE DISTRIBUTION - A surface charge measuring distribution method includes the steps of irradiating a sample with a charged particle beam and charging a sample surface in a spot-like manner, irradiating the charged sample with the charged particle beam to measure a potential at a potential saddle point formed above the sample, selecting one of preset multiple structure models and a tentative space charge distribution associated with the selected structure model, calculating a space potential at the potential saddle point by electromagnetic field analysis using the selected structure model and tentative space charge distribution, comparing the calculated space potential and measured value to determine the tentative space charge distribution as a space charge distribution of the sample when an error between the space potential and the measured value is within a predetermined range, and calculating a surface charge distribution of the sample by electromagnetic field analysis based on the determined space charge distribution.03-08-2012