Hiroaki Tamura
Hiroaki Tamura, Kyoto-Shi JP
Patent application number | Description | Published |
---|---|---|
20100289739 | STORAGE MEDIUM STORING INFORMATION PROCESSING PROGRAM, INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD - A game apparatus saves, in accordance with an instruction of a user, a photographing image taken by an inward camera or an outward camera, or a handwriting image of a handwritten note inputted using a touch panel. Moreover, in accordance with an instruction of the user, position information is saved together with the photographing image or the handwriting image. That is, a photographing place or a creation place of the handwritten note is registered on a map. When the photographing image or the handwriting image is reproduced, an image of a landmark set near a position on the map indicated by the position information is reproduced before the photographing image or the handwritten image. | 11-18-2010 |
Hiroaki Tamura, Suwa JP
Patent application number | Description | Published |
---|---|---|
20090186150 | METHOD FOR MANUFACTURING FERROELECTRIC MEMORY - A method for manufacturing a ferroelectric memory includes the steps of: preparing a sol-gel solution; removing solvent from the sol-gel solution to obtain powder; dividing the powder into at least first powder and second powder; obtaining solution with the first powder; coating the solution on a first conductive film; and applying heat treatment to the solution on the first conductive film to form a ferroelectric film. | 07-23-2009 |
Hiroaki Tamura, Shimosuwa JP
Patent application number | Description | Published |
---|---|---|
20090075400 | METHOD FOR MANUFACTURING FERROELECTRIC MEMORY - A method for manufacturing a ferroelectric memory includes the steps of: forming an iridium film above a substrate; forming an iridium oxide layer on the iridium film; changing the iridium oxide layer into an amorphous iridium layer; oxidizing the amorphous iridium layer to form an iridium oxide portion; forming a ferroelectric film on the iridium oxide portion by a MOCVD method; and forming an electrode on the ferroelectric film. | 03-19-2009 |
20090075401 | METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE - A method for manufacturing a ferroelectric capacitor having a ferroelectric film interposed between a first electrode and a second electrode is provided. The method includes the steps of: forming an electrode film above a substrate; thermally oxidizing a surface layer of the electrode film to form an oxidized electrode layer in an atmosphere of atmospheric-pressure with an oxygen partial pressure being 2% or grater; forming a ferroelectric film on the electrode layer by a MOCVD method thereby forming a first electrode composed of the electrode film including the oxidized electrode layer that serves as a base for the ferroelectric film; and forming a second electrode on the ferroelectric film. | 03-19-2009 |
Hiroaki Tamura, Kuwana JP
Patent application number | Description | Published |
---|---|---|
20080213924 | Ferroelectric memory device and method of manufacturing the same - A method of manufacturing a ferroelectric memory device includes: forming a hydrogen barrier film which covers a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, wherein a thickness of an area of the hydrogen barrier film provided on the upper electrode is made greater than a thickness of an area of the hydrogen barrier film provided on a sidewall of the ferroelectric capacitor by forming the area of the hydrogen barrier film provided on the upper electrode in a plurality of layers. | 09-04-2008 |
Hiroaki Tamura, Shimosuwa-Machi JP
Patent application number | Description | Published |
---|---|---|
20110169898 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS - A piezoelectric element comprising a first electrode, a piezoelectric layer which is composed of a metal oxide containing lead, zirconium and titanium and which formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer has negatively charged Pb—O complex defects and positively charged Pb—O complex defects, the concentration of the negatively charged Pb—O complex defects being higher than the concentration of the positively charged Pb—O complex defects. | 07-14-2011 |
20120162321 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer and an electrode provided to the piezoelectric layer. The piezoelectric layer has a Perovskite-type structure containing bismuth and iron, and includes nitrogen in an oxygen site of the Perovskite-type structure. | 06-28-2012 |
Hiroaki Tamura, Sagamihara-Shi JP
Patent application number | Description | Published |
---|---|---|
20150147638 | BATTERY PACK - To provide a battery pack less subject to vibration, shock, or the like and stable in characteristics. | 05-28-2015 |