Patent application number | Description | Published |
20080203471 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE - The nitride semiconductor device includes: a nitride semiconductor structure comprising an n-type first layer, a p-type second layer, and an n-type third layer, the nitride semiconductor structure comprising a mesa structure having a lateral surface which forms a wall surface extending from the first, second, to third layers; a gate insulating film formed on the wall surface of the mesa structure; a gate electrode formed as facing the wall surface in the second layer; a drain electrode electrically connected to the first layer; and a source electrode electrically connected to the third layer, the nitride semiconductor structure having a high dislocation region and a low dislocation region arranged along a direction parallel to a principal surface of lamination of the nitride semiconductor structure, a dislocation density of the low dislocation region being lower than that of the high dislocation region, the mesa structure being formed in the low dislocation region. | 08-28-2008 |
20080285609 | Semiconductor laser diode - An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer. | 11-20-2008 |
20080315210 | High electron mobility transistor - A GaN-based semiconductor layer is stacked on a GaN-based single-crystal substrate. The GaN-based single-crystal substrate forms an electron transit layer, and the GaN-based semiconductor layer forms an electron supply layer. A principal growth plane of the GaN-based single-crystal substrate is an m-plane, and a principal growth plane of the GaN-based semiconductor layer formed on the GaN-based single-crystal substrate is also an m-plane. With such a layer structure, no piezoelectric field is generated since the m-plane is a nonpolar plane. This suppresses generation of a two-dimensional electron gas layer at the time when no gate voltage is applied and consequently enables achievement of a normally-off configuration. | 12-25-2008 |
20080315256 | Nitride semiconductor device - A nitride semiconductor device according to the present invention includes: a nitride semiconductor laminated structure comprising a first layer made of a Group III nitride semiconductor, a second layer laminated on the first layer and made of an Al-containing Group III nitride semiconductor with a composition that differs from that of the first layer, the nitride semiconductor laminated structure comprising a stripe-like trench exposing a lamination boundary between the first layer and the second layer; a gate electrode formed to oppose the lamination boundary; and a source electrode and a drain electrode, having the gate electrode interposed therebetween, each connected electrically to the second layer. | 12-25-2008 |
20090278197 | MIS FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - The MIS field-effect transistor includes: a substrate; a nitride semiconductor multilayer structure portion formed on the substrate, including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked thereon and a third group III-V nitride semiconductor layer of the first conductivity type stacked thereon; a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over these first, second and third group III-V nitride semiconductor layers; a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer via the gate insulating film; a drawn portion electrically connected to the first group III-V nitride semiconductor layer and drawn from the nitride semiconductor multilayer structure portion in a direction parallel to the substrate; a drain electrode formed in contact with the drawn portion; and a source electrode electrically connected to the third group III-V nitride semiconductor layer. | 11-12-2009 |
20090321854 | MIS FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - An MIS field effect transistor includes a nitride semiconductor multilayer structure including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type which is arranged on the first group III-V nitride semiconductor layer, and a third group III-V nitride semiconductor layer of the first conductivity type which is arranged on the second group III-V nitride semiconductor layer. A gate insulating film is formed on a wall surface ranging over the first, second and third group III-V nitride semiconductor layers so that the film stretches over the first, second and third group III-V nitride semiconductor layer. A gate electrode made of a conductive material is formed so that it faces the second group III-V nitride semiconductor layer via the gate insulating film. A drain electrode is provided to be electrically connected to the first group III-V nitride semiconductor layer, and a source electrode is provided to be electrically connected to the third group III-V nitride semiconductor layer. | 12-31-2009 |
20100006894 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The semiconductor device includes a P-type group III-V nitride semiconductor layer, an N-type group III-V nitride semiconductor layer, and an electrode in contact with both of the P-type group III-V nitride semiconductor layer and the N-type group III-V nitride semiconductor layer. The electrode includes a first electrode portion made of a first conductive material, and a second electrode portion, made of a second conductive material different from the first conductive material, bonded to the first electrode portion. The first electrode portion is in contact with the P-type group III-V nitride semiconductor layer, and the second electrode portion is in contact with the N-type group III-V nitride semiconductor layer. | 01-14-2010 |
20100047976 | METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT - The method for forming a nitride semiconductor laminated structure according to the present invention includes: a first layer forming step of forming an n-type or i-type first layer composed of a group III nitride semiconductor; a second layer forming step of laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer; and a third layer forming step of forming an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer after the second layer forming step. | 02-25-2010 |
20100078688 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR PACKAGE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device of the present invention includes: a nitride semiconductor laminated structure including an n-type first layer, a second layer that is laminated on the first layer and contains a p-type impurity, and an n-type third layer laminated on the second layer, each layer of the nitride semiconductor laminated structure being made of a Group III nitride semiconductor, and having a wall surface extending from the first, second, to third layers; a fourth layer that is formed on the wall surface in the second layer and that has a different conductive characteristic from that of the second layer; a gate insulating film formed to contact the fourth layer; and a gate electrode formed as facing the fourth layer with the gate insulating film being sandwiched between the gate electrode and the fourth layer. | 04-01-2010 |
20100096615 | LIGHT-EMITTING DEVICE - A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface. | 04-22-2010 |
20100189155 | LASER LIGHT EMITTING DEVICE - Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring | 07-29-2010 |
20100295054 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°<θ<0°. | 11-25-2010 |