| Patent application number | Description | Published |
|---|
| 20100039545 | SOLID-STATE IMAGE-PICKUP DEVICE - Pupil correction is performed on wiring lines with a high flexibility by improving an arrangement structure of wiring layers. An image-pickup region is divided in two, the left and right sides. Regarding wiring lines at the position of a pixel that is arranged on the left side (the −X side) with respect to the center of the image-pickup region, a contact unit | 02-18-2010 |
| 20100091156 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region. | 04-15-2010 |
| 20100097508 | SOLID STATE IMAGE SENSOR, METHOD FOR DRIVING A SOLID STATE IMAGE SENSOR, IMAGING APPARATUS, AND ELECTRONIC DEVICE - A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row. | 04-22-2010 |
| 20100225792 | Solid-state imaging device, manufacturing method of solid-state imaging device and electronic apparatus - A solid-state imaging device, includes: plural unit pixels including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a quadratic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion. | 09-09-2010 |
| 20100321616 | IMAGING DEVICE, ELECTRIC CHARGE READOUT METHOD, AND IMAGING APPARATUS - An imaging device includes: first green pixels; and second green pixels adjacent to the respective first green pixels in a first direction, which is the direction in which electric charge accumulated in the pixels is read, wherein the dimension of the first and second green pixels in a second direction perpendicular to the first direction is twice the dimension of the first and second green pixels in the first direction. | 12-23-2010 |
| 20110019041 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA - A solid-state imaging device includes: photodiodes formed for pixels arranged on a light sensing surface of a semiconductor substrate; a signal reading unit formed on the semiconductor substrate to read a signal charge or a voltage; an insulating film formed on the semiconductor substrate and including optical waveguides; color filters formed on the insulating film; and on-chip lenses formed on the color filters. The first and second pixel combinations are alternately arranged both in the horizontal and vertical directions, the first pixel combination having a layout in which two green pixels are arranged both in the horizontal and vertical directions and a total of four pixels are arranged, the second pixel combination having a layout in which two pixels are arranged both in the horizontal and vertical directions, a total of four pixels are arranged, and two red pixels and two blue pixels are arranged cater cornered. | 01-27-2011 |
| 20110273597 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Provided is a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal. | 11-10-2011 |
| 20110298022 | MANUFACTURING METHOD FOR SOLID-STATE IMAGE PICKUP DEVICE, SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUS - A solid-state image pickup device and method for manufacturing the same. The solid-state image pickup device includes a substrate, a first charge accumulation region formed within the substrate, a first impurity region formed within the substrate and located above the charge accumulation region, and a gate electrode disposed on a surface of the substrate which is closer to the first impurity region. Further, a portion of the first impurity region and the charge accumulation region extend underneath a portion of the gate electrode, and edges of the charge accumulation region and first impurity region which lie underneath the gate electrode are in registry with each other. | 12-08-2011 |
| 20110298078 | METHOD FOR PRODUCTION OF SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING ELEMENT, AND IMAGING APPARATUS - Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation. | 12-08-2011 |
