| Patent application number | Description | Published |
|---|
| 20090039509 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is provided which can prevent contacts between thin metal wires for electrically connecting the electrodes of a substrate with the electrodes of a semiconductor element. The semiconductor device of the present invention includes metal protrusions formed on the electrodes of the semiconductor element, the metal protrusions having lower hardness than the hardness of the thin metal wires. The metal protrusions are bonded to the thin metal wires. | 02-12-2009 |
| 20090134505 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to the present invention, protrusions | 05-28-2009 |
| 20090289357 | SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE USING THE SAME - A semiconductor element includes: a substrate having an integrated circuit; and a wire connection electrode and a bump connection electrode which are provided on a same main surface of the substrate as electrodes having a same connection function to the integrated circuit. The wire connection electrode is provided in a periphery of the main surface. The bump connection electrode is provided inside the wire connection electrode on the main surface. When a straight line dividing the main surface into two regions is determined, the wire connection electrode and the bump connection electrode are located opposite to each other with respect to the straight line. | 11-26-2009 |
| 20100044881 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device includes: a first semiconductor element; a second semiconductor element mounted on an upper surface of the first semiconductor element via an adhesive layer; a mold resin body for overmolding the first semiconductor element and the second semiconductor element; and a first spherical filler having a diameter smaller than an average thickness of the adhesive layer and a second spherical filler having a diameter larger than the average thickness of the adhesive layer, the first or second spherical filler being dispersed in the mold resin body. The mold resin body does not contain a spherical filler which has a diameter substantially equal to the average thickness of the adhesive layer. | 02-25-2010 |
| 20100048017 | BONDED STRUCTURE AND BONDING METHOD - An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon. | 02-25-2010 |
| 20110074048 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of the present invention includes: a base material ( | 03-31-2011 |
| 20110147905 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor element, upper through-hole conductor portions and lower through-hole conductor portions are formed such that pore size A of the joint surface of the upper through-hole conductor portion and the lower through-hole conductor portion is smaller than pore size B of the upper through-hole conductor portion on the major surface of the semiconductor element and pore size C of the lower through-hole conductor portion on the other surface of the semiconductor element. Further, electrode portions are formed respectively on the top surfaces of the upper through-hole conductor portions and protrusions | 06-23-2011 |
