| Patent application number | Description | Published |
|---|
| 20080224223 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a first gate electrode formed above a first active region in a substrate with a first gate insulating film interposed therebetween; and a second gate electrode formed above a second active region in the substrate with a second gate insulating film interposed therebetween. The first gate electrode has a shorter gate length than the second gate electrode, the first gate electrode is fully silicided, and at least a portion of the second gate electrode in contact with the second gate insulating film is not silicided. | 09-18-2008 |
| 20080258229 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile. | 10-23-2008 |
| 20090189225 | SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD - A semiconductor device includes a first MIS transistor, and a second MIS transistor having a threshold voltage higher than that of the first MIS transistor. The first MIS transistor includes a first gate insulating film made of a high-k insulating film formed on a first channel region, and a first gate electrode having a first conductive portion provided on and contacting the first gate insulating film and a second conductive portion. The second MIS transistor includes a second gate insulating film made of the high-k insulating film formed on a second channel region, and a second gate electrode having a third conductive portion provided on and contacting the second gate insulating film and a fourth conductive portion. The third conductive portion has a film thickness smaller than that of the first conductive portion, and is made of the same composition material as that of the first conductive portion. | 07-30-2009 |
| 20090278210 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode. | 11-12-2009 |
| 20110147857 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode. | 06-23-2011 |
