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Hineman
Max Hineman, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20080254314 | METHODS FOR FORMING AN ENRICHED METAL OXIDE SURFACE - Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided. | 10-16-2008 |
| 20080286975 | PLATINUM NANODET ETCH PROCESS - A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant. | 11-20-2008 |
| 20090242961 | RECESSED CHANNEL SELECT GATE FOR A MEMORY DEVICE - A memory device comprising one or more recessed channel select gates and at least one charge trapping layer. | 10-01-2009 |
| 20100105211 | NANO-CRYSTAL ETCH PROCESS - A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant. | 04-29-2010 |
Max F. Hineman, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20110250759 | Method to Reduce Charge Buildup During High Aspect Ratio Contact Etch - A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate. | 10-13-2011 |
Wayne C. Hineman, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100088271 | HSM TWO-WAY ORPHAN RECONCILIATION FOR EXTREMELY LARGE FILE SYSTEMS - One aspect of the present invention provides an operation for recovering lost space and maintaining data consistency in a storage environment by providing a two-way orphan reconciliation method for extremely large file systems, such as a Hierarchical Storage Management (HSM) system which manages billions of files. This highly scalable and parallelizable orphan identification process may be used in a HSM controlled environment to enable the execution of a two-way file orphan check. In one embodiment, this orphan check identifies file system client orphans and server object orphans in a single pass by comparing a queue containing a list of migrated files on a storage repository server with a queue containing a list of stub files on a file system. If the queue elements do not match, a file system orphan or server object orphan can appropriately be identified. | 04-08-2010 |
| 20100191708 | Synchronous Deletion of Managed Files - A method of synchronous deletion of managed files in a file system includes receiving a destroy event for a file to be deleted from the file system, the destroy event being generated upon request to destroy a file or corresponding objects of the files system; processing the received destroy event. Processing the destroy event includes determining if hierarchical storage management of the file system is initiated, and if initiated, continuing processing of the received destroy event; blocking threads indefinitely for an event storm during processing of the received destroy event; determining if the file to be deleted is being premigrated, migrated or is being recalled; aborting migration of the file based on the determination of migration and recall; and deleting the file and server objects corresponding to the file from the file system, where initiation of file deletion and server object deletion are synchronous. | 07-29-2010 |