Hilscher
Achim Hilscher, Friedberg DE
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20110037408 | Method for Operating a Gas Discharge Lamp and Lighting System Comprising a Gas Discharge Lamp - A method for operating a discharge lamp ( | 02-17-2011 |
20110211332 | REFLECTOR ELEMENT FOR AN ELECTRIC LAMP AND LAMP WITH SUCH A REFLECTOR ELEMENT - A reflector element for an electric lamp is provided, wherein the reflector element is constructed in such a way that it is designed for photocatalysis and/or for color conversion of the light. | 09-01-2011 |
20110221329 | Low Pressure Discharge Lamp - A low-pressure discharge lamp having a discharge vessel which delimits a gas-tight fill chamber containing a filling gas, wherein the side of the discharge vessel facing the fill chamber is coated at least partially with a luminescent phosphor mixture by means of which electromagnetic radiation in the non-visible range can be transferred into the visible range. A low-pressure discharge lamp which is energy-saving and at the same time possesses good efficiency is provided in that primarily argon is used as the filling gas and that the average particle size of the luminescent phosphor mixture is greater than 5 m. | 09-15-2011 |
20120187871 | LOW-PRESSURE DISCHARGE LAMP - A low-pressure discharge lamp includes a discharge vessel, a gas discharge medium including nitrogen contained in the discharge vessel at low pressure, wherein the discharge lamp is configured such that light may be generated by a high-current discharge process of the gas discharge medium. | 07-26-2012 |
20120320582 | LAMP COMPRISING AT LEAST ONE LIGHT SOURCE AND AN ELECTRONIC OPERATING DEVICE - A lamp in accordance with various embodiments may include at least one light source; and an electronic operating device; wherein at least some electronic components of the operating device are arranged laterally with respect to the light source. | 12-20-2012 |
20140111080 | METHOD FOR PRODUCING A WINDING FOR PRODUCING ELECTRODES FOR DISCHARGE LAMPS, WINDING PROPERTIES IN ELECTRODES FOR DISCHARGE LAMPS AND METHOD FOR PRODUCING AN ELECTRODE FOR DISCHARGE LAMPS - A method for producing a primary winding for producing an electrode for discharge lamps includes: producing a primary winding, wherein producing the primary winding comprises: providing a primary core wire, which has a longitudinal axis and consists of an electrically conductive material, winding a cladding wire around the primary core wire along the longitudinal axis of the primary core wire, with the result that the cladding wire forms a primary core wire cladding surrounding the primary core wire, and winding a wrapping wire around the primary core wire cladding at a radial distance from the primary core wire along the longitudinal axis of the primary core wire. | 04-24-2014 |
Brent Hilscher, Surrey CA
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20130284641 | BITUMEN SEPARATION PROCESS AND APPARATUS FOR PROBLEM ORES - A process for separating from an oil sand slurry solids and bitumen is provided, comprising introducing the oil sand slurry into a separation zone comprising an upper zone and a lower zone; intercepting a settling path of the solids in the separation zone by bringing the solids into contact with at least one intercepting surface to direct the solids to the lower zone; and producing a reduced solids upper zone to allow the bitumen to rise through the upper zone with reduced hindrance from the solids. | 10-31-2013 |
20140346088 | TREATMENT OF POOR PROCESSING BITUMEN FROTH USING SUPERCRITICAL FLUID EXTRACTION - A method for extracting hydrocarbons from a poor processing bitumen froth is provided comprising subjecting a bitumen, solids and water slurry to flotation in a flotation device to produce the poor processing bitumen froth; optionally subjecting the poor processing bitumen froth to centrifugation to remove a portion of the water from the poor processing bitumen froth; and subjecting the poor processing bitumen froth to supercritical extraction in a pressure vessel using a supercritical fluid to produce a hydrocarbon stream suitable for further upgrading. | 11-27-2014 |
Brent Hilscher, Fort Mcmurray CA
David F. Hilscher, Lagrange, NY US
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20120255577 | PARTIAL SOLUTION REPLACEMENT IN RECYCLABLE PERSULFURIC ACID CLEANING SYSTEMS - A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid. | 10-11-2012 |
20140060596 | PARTIAL SOLUTION REPLACEMENT IN RECYCLABLE PERSULFURIC ACID CLEANING SYSTEMS - A recyclable fluid cleaning system wafers includes a cleaning vessel configured to clean semiconductor wafers immersed in a bath of persulfuric acid cleaning solution, the cleaning solution circulated through a primary process tool fluid path; a secondary fluid path that diverts a portion of the persulfuric acid cleaning solution for electrolysis treatment thereof; an electrolysis reactor within the secondary fluid path that receives oxidant depleted sulfuric acid, the electrolysis reactor having electrodes that, when activated causes sulfate ions in the solution to be oxidized and form persulfate ions that are recombined with fluid from the primary fluid path and fed back to the cleaning vessel; and one or more controller devices in operative communication with the cleaning vessel and with the electrolysis reactor. | 03-06-2014 |
David F. Hilscher, Poughkeepsie, NY US
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20080236617 | USE OF DILUTE HYDROCHLORIC ACID IN ADVANCED INTERCONNECT CONTACT CLEAN IN NICKEL SEMICONDUCTOR TECHNOLOGIES - A method for cleaning oxide from the interconnects of a semiconductor that are comprised of nickel (Ni) silicide or nickel-silicide alloys where nickel is the primary metallic component is disclosed. The cleaning comprises performing an SC1 cycle, exposing the wafer comprising a NiSi contact to an SC1 solution. This removes oxygen atoms from the silicon oxide of the nickel silicide. Next, a rinse cycle is performed on the wafer to remove the SC1 solution. Finally, an HCl cycle is performed. During this cycle, the wafer comprising an NiSi contact is introduced to an HCl solution, removing oxygen atoms from the nickel oxide of the NiSi. The method of the present invention provides for lower contact resistance of NiSi semiconductor devices, facilitating semiconductor devices that have the benefits of miniaturization allowed by the NiSi technology, and higher performance due to the reduced contact resistance. | 10-02-2008 |
20120326076 | TOOL FOR MANUFACTURING SEMICONDUCTOR STRUCTURES AND METHOD OF USE - A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH | 12-27-2012 |
20140073130 | FORMING NICKEL-PLATINUM ALLOY SELF-ALIGNED SILICIDE CONTACTS - A method of performing a silicide contact process comprises a forming a nickel-platinum alloy (NiPt) layer over a semiconductor device structure; performing a first rapid thermal anneal (RTA) so as to react portions of the NiPt layer in contact with semiconductor regions of the semiconductor device structure, thereby forming metal rich silicide regions; performing a first wet etch to remove at least a nickel constituent of unreacted portions of the NiPt layer; performing a second wet etch using a dilute Aqua Regia treatment comprising nitric acid (HNO | 03-13-2014 |
20140308821 | HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC OXIDE - A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations. | 10-16-2014 |
David F. Hilscher, Hopewell Junction, NY US
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20130001786 | OVERLAPPING CONTACTS FOR SEMICONDUCTOR DEVICE - A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact. | 01-03-2013 |
20130241070 | OVERLAPPING CONTACTS FOR SEMICONDUCTOR DEVICE - A semiconductor device with overlapping contacts is provided. In one aspect, the semiconductor device includes a dielectric layer; a first contact located in the dielectric layer; and a second contact located in the dielectric layer adjacent to the first contact, wherein a portion of the second contact overlaps a top surface of the first contact. | 09-19-2013 |
Elke Hilscher, Einbeck DE
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20100216114 | METHOD AND APPARATUS FOR DETERMINATION OF COMPONENTS IN ROOT CROPS - The invention relates to a process for the determination of components in root crops as well as a device for performing the process. Root crops of a plot are prepared in such a way that becomes possible, using near-infrared spectroscopy, to determine the content of substances with a high analytical accuracy and short analysis time and wherein the recorded data concerning the identity and quantity of ingredients are representative of all root crops of a plot. | 08-26-2010 |
Hans Jurgen Hilscher, Hattersheim DE
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20090119437 | Method for Data Communication of Bus Users in an Open Automation System - A method for data communication of bus users of an open automation system such that any bus user with an individual and interactive communication may be connected, provides for a communication controller (KC) made up of at least one freely-programmable communication-ALU (RPA, TPA, PEA), with several commands being encoded on a command code for the communication-ALU optimized for particular communication functions, and logic function blocks (FI, Z, V, CRC) arranged in parallel in the communication ALU (RPA, TPA), which carry out particular communication functions, the communication functions not being definitively defined but rather being formed on the basis of the freely-programmable and communication function optimized communication ALUs (RPA, TPA, PEA), wherein several commands are carried out in a system cycle and transitions between various networks can be carried out. | 05-07-2009 |
Roger Leopold Hilscher, Sunbury, PA US
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20150366406 | DRINK MIXER - A drink mixer including a cup with an internal cavity is provided. An inner assembly is located within the internal cavity of the cup. The inner assembly includes a hollow cylinder with a hollow coil tube attached to and surrounding the hollow cylinder. The coil tube may include a top opening and a bottom connected to the cylinder and leading into the hollow core of the cylinder. The inner assembly may be in a first position in which the inner assembly is adjacent the opening of the cup, and a second position which the inner assembly is adjacent to the base of the cup. In use, beverages may be poured in the coil tube through the opening, as well as in the hollow core of the cylinder. Ice may also be placed within the hollow core of the cylinder. The inner assembly may be rotated between the first position and the second position to mix the beverage within the cup. | 12-24-2015 |