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Hille, DE
Andreas Hille, Renningen DE
| Patent application number | Description | Published |
|---|---|---|
| 20120125022 | COOLING SYSTEM - A cooling system for a heat source includes a heat source loop, a refrigerant loop, and a controller. The heat source loop provides a closed fluid path for a process fluid and fluidly connects a valve, a bypass leg and/or a heat exchange leg having a heat exchanger, and a pump. The process fluid is disposed within a portion of the loop and is subject to heat transfer from the heat source. The valve is disposed downstream of the heat source portion of the loop, wherein the valve is selectively operable to direct process fluid to the bypass leg and/or the heat exchanger leg. The refrigerant loop provides a closed fluid path for a fluid refrigerant and fluidly connects the heat exchanger, a refrigerant compressor, a refrigerant condenser, and a refrigerant regulator. The controller is in communication with the valve and is adapted to control the valve to regulate an amount of process fluid entering the bypass leg and the heat exchanger leg. | 05-24-2012 |
Andreas Hille, Loerrach DE
| Patent application number | Description | Published |
|---|---|---|
| 20080290317 | PYROGENICALLY PREPARED SILICON DIOXIDE WITH A LOW THICKENING EFFECT - Provided is a pyrogenically prepared SiO | 11-27-2008 |
| 20100286311 | SILICA AND ALSO EPOXY RESINS - Fumed silicon dioxide powder in the form of aggregated primary particles having a BET surface area of 175±15 m | 11-11-2010 |
Frank Hille, Munchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20090283799 | Reduced Free-Charge Carrier Lifetime Device - According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer. | 11-19-2009 |
Frank Hille, Muenchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20090085103 | SEMICONDUCTOR DEVICE AND METHOD - A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone. | 04-02-2009 |
| 20090186462 | Semiconductor device and Fabrication method - A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region. | 07-23-2009 |
| 20090206440 | Power Semiconductor Device - A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region. | 08-20-2009 |
| 20100087053 | METHOD FOR FABRICATING A SEMICONDUCTOR HAVING A GRADED PN JUNCTION - A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T | 04-08-2010 |
| 20100117117 | Vertical IGBT Device - According to one embodiment, a power semiconductor device comprises a semiconductor substrate. A transistor gate structure is arranged in a trench formed in the semiconductor substrate. A body region of a first conductivity type is arranged adjacent the transistor gate structure and a first highly-doped region of a second conductivity type is arranged in an upper portion of the body region. A drift zone of the second conductivity type is arranged below the body region and a second highly-doped region of the second conductivity type is arranged below the drift zone. An end-of-range irradiation region is arranged adjacent the transistor gate structure and has a plurality of vacancies. In some embodiments, at least some of the vacancies are occupied by metals. | 05-13-2010 |
| 20110275202 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region. | 11-10-2011 |
Frank Hille, Munich DE
| Patent application number | Description | Published |
|---|---|---|
| 20110300707 | Metallization and Its Use In, In Particular, an IGBT or a Diode - A method of fabricating a power semiconductor component having a semiconductor body having at least two main surfaces includes applying a layer of a metallization on at least one of the main surfaces. The layer has a thickness of at least 15 μm and serves as a heat sink. The method also includes producing a field stop zone in the semiconductor body by implantation of protons or helium through the layer. | 12-08-2011 |
Gunther Hille, Remscheid DE
| Patent application number | Description | Published |
|---|---|---|
| 20100060063 | FITTING FOR A VEHICLE SEAT - A fitting ( | 03-11-2010 |
Hans-Dieter Hille, Bergisch Gladbach DE
| Patent application number | Description | Published |
|---|---|---|
| 20090004397 | Water-Dilutable Stone Impact Protection Paint and Compensation Paint, Their Use and Process For Their Production - This invention relates to a method of coating a motor vehicle body including (i) applying as a first layer an electro-dip primer coat; (ii) mixing a water dilutable compensation paint comprising 40 to 80 wt. % binders and a commercial base coat to obtain a mixture, and applying the mixture as a second primer surface layer on said primer coat wherein the primer surface layer applied has a thickness of from 10 to 20 μm; (iii) applying a third layer consisting of a water soluble base coat; and (iv) applying a covering layer of clear coat. | 01-01-2009 |
Jan Hille, Siegen DE
| Patent application number | Description | Published |
|---|---|---|
| 20100106406 | NAVIGATION SYSTEM AND CONTROL UNIT FOR NAVIGATION SYSTEM - The invention relates to a navigation system for a vehicle which comprises a mobile navigation computer and a central control unit. | 04-29-2010 |
Jan Hille, Ludenscheid DE
| Patent application number | Description | Published |
|---|---|---|
| 20090061951 | HANDS-FREE ELECTRONIC DEVICE AND METHOD FOR THE OPERATION OF A HANDS-FREE ELECTRONIC DEVICE - A hands-free electronic device for a vehicle in which the hands-free electronic device is connected to a cell phone so that incoming and/or outgoing communication links can be established by the hands-free electronic device via the cell phone. The hands-free electronic device generates a call number list based on the existence of a call number in the directory of the cell phone and the frequency of use of the call number. | 03-05-2009 |
Ralph Hille, Bad Alexandersbad DE
| Patent application number | Description | Published |
|---|---|---|
| 20080218012 | Terminal board as well as an electrical machine - A terminal board, which is for a housing-less asynchronous motor, includes an electrically insulating base extending in a longitudinal direction and in a traverse direction. A device fastens the base to an electrical machine and another device enables a plurality of terminals to be inserted into the base. The base has a bearing surface that curves concavely in the transverse direction and that is essentially straight in the longitudinal direction. The terminal board can be attached to an asynchronous motor that has a cylindrical stator extending in the longitudinal direction. The motor also has a movably positioned rotor that is located inside of the stator and that is connected to the rotor. The terminal board is introduced in the longitudinal direction of the stator where a number of terminals are inserted. By using the terminal board, a housing-less electrically powered machine can be constructed as small as possible. | 09-11-2008 |
Stefan Hille, Neuss DE
| Patent application number | Description | Published |
|---|---|---|
| 20110245242 | Heterocyclically Substituted Anilinopyrimides - Heterocyclically substituted anilinopyrimidines of the formula (I) | 10-06-2011 |
Thomas Hille, Koblenz DE
| Patent application number | Description | Published |
|---|---|---|
| 20100112064 | TRANSDERMAL THERAPEUTIC SYSTEM COMPRISING ION PAIR MICRORESERVOIRS - The invention relates to a transdermal therapeutic system which comprises a back layer that is impermeable to the active substance, and a peelable protective layer that is impermeable to the active substance and at least one matrix layer consisting of polysiloxanes and/or polysiloxane derivatives and containing micro-reservoirs. Said micro-reservoirs contain at least one ion pair from a pharmacologically active substance and an additive and either the active substance is nucleophilic and the additive is electrophilic or the active substance is electrophilic and the additive is nucleophilic. | 05-06-2010 |
| 20100119585 | TRANSDERMAL THERAPEUTIC SYSTEM FOR ADMINISTERING THE ACTIVE SUBSTANCE BUPRENORPHINE - The invention relates to a transdermal therapeutic system for administering the active substance buprenorphine. Said system comprises at least one carboxylic acid that determines the solubility of buprenorphine in the matrix layer and that can likewise be absorbed. The transdermal therapeutic system according to the invention is used in the treatment of pain and is characterized by a considerably increased utilization of the active substance. | 05-13-2010 |
| 20100122765 | Method for the multi-track tailoring of transdermal therapeutic patches - A method for the multi-track tailoring of transdermal therapeutic patches having at least a one-layer, adhesive reservoir foil containing an active ingredient, which is disposed between an adhesive back foil and a removable protective foil. The reservoir foils are applied per track with their adhesive layers on a transport element moving discontinuously in the longitudinal direction of the reservoir foils. After separating sections of the size of a patch or band aid the same are transferred to a further transport element that is moved continuously for depositing the same thereon in spaced relationship. The present invention provides a method for multi-track tailoring, wherein web-shaped reservoir foils, which can be unwound from rolls, may be utilized without producing any waste containing the active ingredient. | 05-20-2010 |
Thomas Hille, Neuwied DE
| Patent application number | Description | Published |
|---|---|---|
| 20110104244 | TRANSDERMAL THERAPEUTIC SYSTEM PROVIDED WITH IMPROVED LONG-TERM CARRYING COMFORT - The invention relates to transdermal therapeutic systems (TTS) comprising a backing, a reservoir layer containing at least one pharmaceutical active ingredient, and an adhesive. Said transdermal therapeutic systems are characterized in that they are able to continuously adhere to the surface of the skin over a long period of time. During said long period of time, a) there is at least one time interval during which the TTS adhering to the surface of the skin is intensively exposed to water, and b) the active ingredient is transdermally released. The invention also relates to a method for the continuous transdermal release of at least one pharmaceutical active ingredient over a long period of time. | 05-05-2011 |
| 20110159076 | Autodestructive Transdermal Therapeutic System - The invention relates to a transdermal therapeutic system (TTS), preferably in the form of a transdermal plaster, that contains an active substance and an agent which can destroy the active substance. The TTS further includes a means of bringing the active substance, e.g. buprenorphine, and the agent, e.g. potassium permanganate, into contact when the TTS is removed from the skin of the patient, thereby causing the active substance to be destroyed. | 06-30-2011 |
| 20120129415 | Destructive Disposal of Medical Active Ingredients in Transdermal Therapeutic Systems - The invention relates to a multilayered structure used in the destructive disposal of medical active ingredients contained in transdermal therapeutic systems (=TTS). The structure has a multi-layer design and contains at least one layer having agents embedded therein and at least one fiber layer. It may additionally include a protective layer. The structure according to the invention is stored separately from the TTS. The separately stored structure is brought into contact with the TTS after use of the TTS. | 05-24-2012 |