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| 20090121775 | TRANSISTOR AND METHOD FOR OPERATING THE SAME - In a transistor, an AlN buffer layer | 05-14-2009 |
| 20090146182 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer. | 06-11-2009 |
| 20100327293 | FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased. | 12-30-2010 |
| 20110012173 | SEMICONDUCTOR DEVICE - A semiconductor device includes an undoped GaN layer ( | 01-20-2011 |
| 20110024797 | NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION - In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion. | 02-03-2011 |
| 20110037100 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer. | 02-17-2011 |
| 20110095335 | NITRIDE SEMICONDUCTOR DEVICE - A high breakdown voltage GaN-based transistor is provided on a silicon substrate. A nitride semiconductor device including: a silicon substrate, a SiO | 04-28-2011 |
| 20110114967 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode. | 05-19-2011 |
| 20120068227 | SEMICONDUCTOR DEVICE - A normally off semiconductor device with a reduced off-state leakage current, which is applicable to a power switching element, includes: a substrate; an undoped GaN layer formed above the substrate; an undoped AlGaN layer formed on the undoped GaN layer; a source electrode and a drain electrode, formed on the undoped GaN layer or the undoped AlGaN layer; a P-type GaN layer formed on the undoped AlGaN layer and disposed between the source electrode and the drain electrode; and a gate electrode formed on the P-type GaN layer, wherein the undoped GaN layer includes an active region including a channel and an inactive region not including the channel, and the P-type GaN layer is disposed to surround the source electrode. | 03-22-2012 |
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| 20110215379 | FIELD EFFECT TRANSISTOR - A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential. | 09-08-2011 |
| 20110227093 | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - The present invention has an object to provide an FET and a method of manufacturing the FET that are capable of increasing the threshold voltage as well as decreasing the on-resistance. The FET of the present invention includes a first undoped GaN layer; a first undoped AlGaN layer formed on the first undoped GaN layer, having a band gap energy greater than that of the first undoped GaN layer; a second undoped GaN layer formed on the first undoped AlGaN layer; a second undoped AlGaN layer formed on the second undoped GaN layer, having a band gap energy greater than that of the second undoped GaN layer; a p-type GaN layer formed in the recess of the second undoped AlGaN layer; a gate electrode formed on the p-type GaN layer; and a source electrode and a drain electrode which are formed in both lateral regions of the gate electrode, wherein a channel is formed at the heterojunction interface between the first undoped GaN layer and the first undoped AlGaN layer. | 09-22-2011 |
| 20110266554 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE - In a manufacturing method of a semiconductor device, first, a first semiconductor layer, a second semiconductor layer, and a p-type third semiconductor layer are sequentially epitaxially grown on a substrate. After that, the third semiconductor layer is selectively removed. Then, a fourth semiconductor layer is epitaxially grown on the second semiconductor layer. Then, a gate electrode is formed on the third semiconductor layer. | 11-03-2011 |
| 20110272740 | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region. | 11-10-2011 |
| 20110278540 | FIELD-EFFECT TRANSISTOR - Provided is a field-effect transistor which is capable of suppressing current collapse. An HEMT as the field-effect transistor includes: a first semiconductor layer made of a first nitride semiconductor; and a second semiconductor layer formed on the first semiconductor layer and made of a second nitride semiconductor having a greater band gap than a band gap of the first nitride semiconductor, wherein the first semiconductor layer includes a region in which a threading dislocation density increases in a stacking direction. | 11-17-2011 |
| 20110297960 | TRANSISTOR ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a transistor assembly includes the steps of: (a) forming a transistor; (b) polishing a base substrate; and (c) securing the transistor of which the base substrate is polished to a support substrate. The step (a) is a step of forming a first semiconductor layer and a second semiconductor layer on a principle surface of the base substrate. The step (b) is a step of polishing a surface of the base substrate opposite to the principle surface. The step (c) is a step of securing the transistor on the support substrate in the presence of a stress applied on the base substrate in such a direction that a warp of the base substrate is reduced. The base substrate is made of a material different from that of the first semiconductor layer and the second semiconductor layer, and a tensile stress is applied on the second semiconductor layer. | 12-08-2011 |
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| 20100080963 | PHOTOSENSITIVE RESIN COMPOSITION, POLYMER COMPOUND, METHOD OF FORMING A PATTERN, AND ELECTRONIC DEVICE - A polymer compound is provided which is excellent in heat resistance and insulating property, and a photosensitive resin composition is provided which includes the polymer compound, and may form a cured pattern or a cured film excellent in pattern forming property, resolution, heat resistance and insulating property. Also, a method for forming a cured pattern excellent in pattern forming property, resolution, heat resistance and insulating property using the photosensitive resin composition, and an electronic device having high reliance for a semiconductor device or for a display device are provided. The photosensitive resin composition includes a polymer compound obtained by reacting a monomer represented by Formula (1) and a monomer represented by Formula (2), and a photosensitizing agent. | 04-01-2010 |
| 20120045616 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING CURED FILM, CURED FILM, ORGANIC EL DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE - A positive photosensitive resin composition including: a resin comprising a structural unit having an acid dissociative group and a structural unit having a functional group capable of forming a covalent bond by reacting with a carboxyl group or a phenolic hydroxyl group; and an acid generator represented by the following formula (I): | 02-23-2012 |
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| 20080221341 | Trisoxetane compound, process for producing the same, and opitcal waveguide using the same - The present invention relates to a trisoxetane compound represented by the following formula (1): | 09-11-2008 |
| 20100008621 | MANUFACTURING METHOD OF OPTO-ELECTRIC HYBRID BOARD AND OPTO-ELECTRIC HYBRID BOARD OBTAINED THEREBY - A method of manufacturing an opto-electric hybrid board which is capable of reducing the number of steps for the manufacture of the opto-electric hybrid board and which achieves the reduction in thickness of the opto-electric hybrid board to be manufactured, and an opto-electric hybrid board obtained thereby. A plurality of protruding cores (optical interconnect lines) | 01-14-2010 |
| 20100067849 | MANUFACTURING METHOD OF OPTICAL WAVEGUIDE DEVICE AND OPTICAL WAVEGUIDE DEVICE OBTAINED THEREBY - A manufacturing method of an optical waveguide device and an optical waveguide device obtained thereby. An under cladding layer is formed on the front surface of a colored-layer-coated PET substrate including a PET substrate portion and a colored layer of a color that absorbs irradiation light and formed on the back surface of the PET substrate portion, and then a photosensitive resin layer for the formation of cores is formed thereon. In forming the cores, when the irradiation light reaches the bottom surface of the PET substrate portion, most of the irradiation light is absorbed by the colored layer, so that there is little irradiation light reflected from the bottom surface of the PET substrate portion. This significantly reduces the irradiation light reflected diffusely from the PET substrate portion and reaching the photosensitive resin layer to thereby effectively suppress the surface roughening of the side surfaces of the cores. | 03-18-2010 |
| 20100104254 | COMPOSITION FOR OPTICAL WAVEGUIDE, PREPARATION METHOD FOR THE COMPOSITION, OPTICAL WAVEGUIDE PRODUCED BY USING THE COMPOSITION, AND OPTICAL WAVEGUIDE MANUFACTURING METHOD - A composition for an optical waveguide is provided which contains no halogen atom and has no light absorption band in a visible to near-infrared spectral range. A method of preparing the composition is also provided. The composition includes: (A) a fine particulate zirconium oxide material including zirconium oxide fine particles, and a silicone oligomer and a silicone oligomer polymer bonded to outer peripheral surfaces of the zirconium oxide fine particles; and (B) a photoacid generator. For preparation of the composition, the fine particulate zirconium oxide material (A) is prepared by mixing a silicone oligomer in an aqueous dispersion of zirconium oxide fine particles, polymerizing the silicone oligomer in an acidic pH range to provide a silicone oligomer polymer, and bonding the silicone oligomer and the silicone oligomer polymer to outer peripheral surfaces of the zirconium oxide fine particles. Then, the photoacid generator (B) is blended with the fine particulate zirconium oxide material (A). | 04-29-2010 |
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| 20080282044 | DATA CONTROL SYSTEM, CONTROL SERVER, DATA CONTROL METHOD, AND PROGRAM - There is provided a data control system that includes a control server and an information processing terminal equipped with a non-contact type IC chip. The information processing terminal includes a chip memory and a consistency check request portion. The chip memory includes at least one service area that stores a service data item and an index area that stores a link information item for accessing the service area. The consistency check request portion transmits a consistency check request. The control server includes a data acquisition portion that acquires the link information item according to the check request, an area determination portion that determines whether the corresponding service area exists for each link information item, a reading portion that reads the determined service area, and a data update portion that, if the service area could not be read, updates the link information item with information not indicating any access destination. | 11-13-2008 |
| 20080283595 | Authentication Information Management System, Authentication Information Management Server, Authentication Information Management Method and Program - There is provided an authentication information management system including: an information processing terminal mounted with an IC chip capable of non-contact communication with a reader/writer; and an authentication information management server capable of communication with the information processing terminal, wherein the information processing terminal includes: a plurality of memory areas provided in the IC chip for each of functions of the IC chip; and a plurality of applications for achieving each of the functions of the IC chip, and the authentication information management server includes: an authentication information setting portion for setting authentication information in the first memory area in response to a request sent from the first application of the information processing terminal; and an authentication information notifying portion which in response to a request sent from a second application of the information processing terminal, notifies the second application of the authentication information of the first memory area. | 11-20-2008 |
| 20080284572 | DATA CONTROL SYSTEM, CONTROL SERVER, DATA CONTROL METHOD, AND PROGRAM - There is provided a data control system that includes a control server and an information processing terminal equipped with a non-contact type IC chip. The information processing terminal includes an internal memory in the IC chip and an update request portion. The internal memory includes at least one service area that can store a service data item and a control information item and includes an index area that stores a link information item for accessing the service area The update request portion transmits an update request that specifies the link information item and service area to be updated, as well as a type of update processing. The control server includes a data update portion that responds to the update request, performing the specified type of update processing on the specified link information item and service area and causing the specified link information item and service area to be updated. | 11-20-2008 |
| 20090222662 | CARD ISSUING SYSTEM, CARD ISSUING SERVER, CARD ISSUING METHOD AND PROGRAM - The present invention provides a service providing server including an authentication ticket creating unit for encrypting access authentication information and creating an authentication ticket, and an authentication ticket transmitting unit for transmitting the authentication ticket to a card issuing server; where the card issuing server includes an authentication ticket verifying unit for decrypting the authentication ticket and verifying the authentication ticket, a verification result notifying unit for notifying the verification result of the authentication ticket to the service providing server, a connection information transmitting unit for transmitting connection information for connecting to the card issuing server to the service providing server along with the verification result of the authentication ticket, and an authentication information verifying unit for comparing and verifying the access authentication information of the authentication ticket and access authentication information stored in the IC chip of the information processing terminal. | 09-03-2009 |
| 20110041064 | INFORMATION PROCESSING APPARATUS, PROGRAM, AND INFORMATION PROCESSING SYSTEM - An information processing apparatus includes a reading unit that reads, from a memory area of an IC chip, identification information of a service including at least any one of a wire communication service via an external wire communication or a wireless communication service via an external wireless communication, which use the memory area of the IC chip. The information processing apparatus also includes an acquisition unit that acquires service information to allow a user to use a service from an external server by transmitting the identification information of the service which the reading unit has read to the external server, and includes a display unit that displays to allow the user to use the service based on the service information which the acquisition unit has acquired. | 02-17-2011 |
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| 20080294739 | OPERATION MONITORING APPARATUS, OPERATION MONITORING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM STORING OPERATION MONITORING PROGRAM - An operation monitoring apparatus monitors statuses of plural monitoring target apparatus connected to a network, by sending a connection confirmation mail, via a notification server located on the network, receiving the connection confirmation mail and an operation confirmation mail sent from each monitoring target apparatus, storing a scheduled transmission time of a next operation confirmation mail contained in the operation confirmation mail, as part of apparatus information of the monitoring target apparatus and judging, using the scheduled transmission time, whether the next operation confirmation mail has been received. The judgment is not made if a latest connection confirmation mail sent from the operation monitoring apparatus itself has not been received. | 11-27-2008 |
| 20090287818 | MONITORING APPARATUS AND MONITORING METHOD - A monitoring apparatus for monitoring communication configurations of a plurality of client devices connected to a server, the monitoring apparatus includes: a processor for controlling the communications between the client devices and the server in accordance with a process including: receiving from each of the client devices communication condition information and storing latest communication condition information of each of the client devices; determining at a time interval whether any of client devices became incapable of communication with the server by checking the latest communication condition information of each of client devices; and upon detection of at least one of the client devices for which obsolete communication condition information is stored, issuing a notice indicating that the at least one of the client devices are incapable of communication with the server. | 11-19-2009 |
| 20100223509 | ELECTRONIC DEVICE, INFORMATION PROCESSING SYSTEM, METHOD OF NOTIFICATION OF A FAULT OF AN ELECTRONIC DEVICE, AND FAULT NOTIFICATION PROGRAM - An information processing system includes an electronic device and an information processing unit. The electronic device includes a fault detection unit; a data generating unit for generating, as data, the content of the detected fault; a data dividing unit for dividing the generated data into plural division data in the case where the data exceeds a predetermined capacity; a data compression unit for compressing each of the plural division data; an identification information adding unit for adding identification information to each of the plural compressed division data; and a data transmission unit for transmitting the plural compressed division data with the identification information. The information processing unit includes a data receiving unit for receiving the plural compressed division data, and a data restoration unit for restoring the plural compressed division data into original data based on the identification information. | 09-02-2010 |
| 20110119664 | FIRMWARE DISTRIBUTING DEVICE, PROGRAM, AND METHOD - Modified firmware is registered and controlled, and, when a download request is received from a terminal device, unupdated firmware is determined and downloaded to the terminal device. User identification information obtained from the download request is acquired, and, if the user identification information matches the user identification information of another terminal device that is already carrying out download, the download to the terminal device that output the download request is stopped. Even when the user identification information matches the user identification information of the other terminal device that is already carrying out download, if it is determined to be a download request by an operator operation, stopping the download is cancelled so as to execute the download, and a forcible termination notification is transmitted to the other terminal device that is already executing download so as to interrupt the download thereof in the process. | 05-19-2011 |
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| 20090122738 | Method of broadcasting packets in ad-hoc network - A method for distributing a packet to a plurality of moving nodes comprising receiving a packet containing at least a message, a sender identifier, a location of a sender, an identifier for a relay node and distance from the sender and the relay node, determining if a node receiving the packet is the relay node and immediately distributing the packet to a plurality of moving nodes if the receiving node is the relay node. If the receiving node is not the relay node, the method further comprises steps of waiting a set period of time, determining if a packet is received from a different sender containing the same message, within the period of time and distributing the packet to a plurality of moving nodes if a packet containing the same message is not received within the period of time. The distributed packet includes an identifier for a successive relay node. | 05-14-2009 |
| 20090129323 | Method for determining transmission channels for a LPG based vehicle communication network - A method for determining a transmission channel for multi-hop transmission of a data packet from a plurality of data channels in an ad-hoc network. The network includes at least one local peer group. Each local peer group has a plurality of moving vehicles as nodes. The method comprises steps of determining available channels for data packet transmission at each node, transmitting a first list of available channels to at least one other node, receiving, from the at least one other node, a second list of available channel for the at least one other node, creating an available channel table including the first and second lists of available channels, selecting a transmitting channel for a data packet based upon information in the available channel table, and advertising the selected channel to the at least one other node. | 05-21-2009 |
| 20090285197 | METHODS FOR EFFICIENT ORGANIZATION OF VEHICLE PEER GROUPS AND EFFICIENT V2R COMMUNICATIONS - The present invention provides methods for efficient control message distribution in a VANET. Efficient flooding mechanisms are provided to fulfill the objective of flooding (delivering a message to every connected node) with a limited number of re-broadcasting by selected key nodes. A suppression-based efficient flooding mechanism utilizes a Light Suppression (LS) technique to reduce the number of flooding relays by giving up the broadcasting of a flooding message when a node observes downstream relay of the same flooding message. Additionally, a relay-node based efficient flooding mechanism selects Relay Nodes (RN) to form an efficient flooding tree for control message delivery. RNs are nodes that relay at least one control message, for instance a Membership Report (MR) to the upstream node in “k” previous control message cycles The upstream node may be the group header (GH) for the LPG. | 11-19-2009 |
| 20090285213 | Inter-Local Peer Group (LPG) Routing Method - An on-demand method of routing data between a plurality of local peer groups (LPG). Each LPG includes a plurality of moving nodes. The method comprises transmitting a route request message from a source node, relaying the route request message to a native boundary node; forwarding the route request message to a foreign boundary node, determining if the destination node is within an LPG for the foreign boundary node; relaying the route request message to another boundary node if the destination node is not within the LPG, relaying the route request message to the destination node if the destination node is within the LPG, receiving the routing request message at the destination node, transmitting a routing response to the source node, relaying the routing response to the source node through a path discovered by the route request, receiving the routing response at the source node, and transmitting the data, upon receipt of the routing response. | 11-19-2009 |
