Hikari
Hikari Inoue, Kanagawa JP
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20140288912 | SEMICONDUCTOR DEVICE SIMULATOR, SIMULATION METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM - A web simulator includes a sensor database, an account database that stores access authorization table, an authentication processing unit that specifies access authorization of an access by reference to the access authorization table, a sensor registration and update unit that registers/updates sensor information in the sensor database in accordance with an instruction of access, and a simulation execution unit that executes simulation of a connection circuit in which a sensor indicated by the registered/updated sensor information and a semiconductor device having an analog front-end circuit are connected. | 09-25-2014 |
Hikari Kawakami, Kagawa-Ken JP
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20080294136 | BREAST MILK ABSORBENT PAD - A breast milk absorbent pad according to the present invention comprises first and second sections adapted to cover respective breasts and a third section extending between these first and second sections wherein at least one of upper and lower edges of the third section is concavely curved toward a transverse axis of the breast milk absorbent pad. | 11-27-2008 |
20110040275 | PACKED BREAST MILK ABSORBENT PAD AND METHOD FOR PACKING - A packed breast milk absorbent pad according to the present invention includes a breast milk absorbent pad and an individual packing envelope adapted to pack the breast milk absorbent pad therein. The breast milk absorbent pad is laid upon an envelope sheet so as to extend astride a first fold and thereby to lie both first and second regions of the packing sheet and is temporarily bonded to the inner surface of the first region by means of a temporary fastening zone. | 02-17-2011 |
Hikari Mochizuki, Fucyuu JP
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20160094292 | SIGNAL PROCESSING DEVICE AND SIGNAL PROCESSING METHOD - A signal processing device that processes a digital signal formed by sampling an electric signal using a clock signal, the electric signal being obtained by converting an optical signal inputted from a transmission line, the signal processing device includes: a first chromatic dispersion compensator that compensates a waveform distortion caused by a chromatic dispersion with respect to the digital signal; a first nonlinear optical effect compensator that compensates a waveform distortion caused by a nonlinear optical effect with respect to one signal outputted from the first chromatic dispersion compensator; and a controller that detects a phase fluctuation of other signal outputted from the first chromatic dispersion compensator, and controls the clock signal based on the detected phase fluctuation. | 03-31-2016 |
Hikari Sakaebe, Osaka JP
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20110037037 | COMPOSITE OF METAL SULFIDE AND METAL OXIDE AND PROCESS FOR PRODUCING THE COMPOSITE - The present invention provides a process for producing a composite of metal sulfide and metal oxide obtained by dispersing a metal sulfide, which is nickel sulfide, copper sulfide, iron sulfide or a mixture thereof, in a metal salt-containing aqueous solution, and depositing metal salt on the metal sulfide by drying the aqueous solution; and heat-treating the metal sulfide comprising a metal salt deposited thereon at 400 to 900° C. in a sulfur-containing atmosphere. Also disclosed is a composite obtained by the aforementioned process, comprising a metal sulfide having a surface partially covered with a metal oxide. The composite of the present invention has improved cycle characteristics while maintaining a high charge/discharge capacity and excellent electrical conductivity inherently possessed by metal sulfide, which is usable as a material having a high theoretical capacity and excellent electrical conductivity when used as a positive-electrode material for a lithium secondary battery. | 02-17-2011 |
20110070486 | IONIC LIQUID - An object of the invention is to provide an ionic liquid having a low viscosity and low melting point, and having a high electrical conductivity and thermal stability. The ionic liquid comprises fluorosulfonyl(trifluoromethylsulfonylamide) (FTA) as an anion and a cation selected from N1111, N1112, N1113, N1122, N1133, N2221, N1224, DEME, N2222, N3333, N4444, N5555, AS44, DMI, PMI, BMI, Py11, Py12, Py14, PP11, PP12, PP13, PP14, P2222, and PS44. | 03-24-2011 |
20110171537 | LITHIUM SULFIDE-CARBON COMPLEX, PROCESS FOR PRODUCING THE COMPLEX, AND LITHIUM ION SECONDARY BATTERY UTILIZING THE COMPLEX - The present invention provides a process for producing a lithium sulfide-carbon composite, the process comprising placing a mixture of lithium sulfide and a carbon material having a specific surface area of 60 m | 07-14-2011 |
20110223481 | PROCESS FOR PRODUCING METAL SULFIDE - The present invention provides a production process of a metal sulfide, which includes placing a metal component and sulfur in a conductive container, and applying a pulsed direct current to the container in a non-oxidizing atmosphere to cause the metal component to react with sulfur, and also provides a metal sulfide obtained by the process and represented by a composition formula: MS | 09-15-2011 |
Hikari Shimizu, Suwa JP
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20080239460 | METHOD OF DRIVING ORGANIC TRANSISTOR AND ELECTROPHORETIC DISPLAY DEVICE - Provided is a method of driving an organic transistor formed on a substrate, wherein the substrate is sealed by a sealing material, and a bias voltage for compensating for threshold voltage of the organic transistor is supplied to the organic transistor at least at the time of an operation of the organic transistor. | 10-02-2008 |
Hikari Tajima, Koganei Tokyo JP
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20150255514 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment includes a semiconductor substrate, a first semiconductor member and a second semiconductor member provided on the semiconductor substrate, a first electrode disposed between the first semiconductor member and the second semiconductor member, and a second electrode disposed between the semiconductor substrate and the first electrode. The first semiconductor member and the second semiconductor member extend in a first direction perpendicular to an upper surface of the semiconductor substrate. The first semiconductor member and the second semiconductor member are separated in a second direction orthogonal to the first direction. The first electrode extends in a third direction intersecting both the first direction and the second direction. The second electrode extends in the third direction. | 09-10-2015 |
20150255515 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment, includes a semiconductor member, a first electrode and a second electrode. The semiconductor member includes a first portion of a first conductivity type, a second portion of a second conductivity type, and a third portion of the first conductivity type disposed in this order along a first direction. The first electrode is disposed on a second direction side as viewed from the semiconductor member. The second electrode is disposed on an opposite side of the second direction as viewed from the semiconductor member. An end portion of the second electrode on a first direction side is located in the first direction side rather than that of the first electrode. An end portion of the second electrode on an opposite side of the first direction is located in the first direction side rather than that of the first electrode. | 09-10-2015 |
20160064452 | MEMORY DEVICE - A memory device according to an embodiment includes a memory element; and a transistor including a semiconductor layer and a plurality of gates, wherein the plurality of gates include: a first set of gates, the gates being disposed in a manner to sandwich the semiconductor layer, and a second set of gates, the gates being disposed in a manner to sandwich the semiconductor layer, the gates included in the first set is disposed in a manner to separate from the gates included in the second set in a direction along a side surface of the semiconductor layer. | 03-03-2016 |
Hikari Tajima, Koganei JP
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20150270312 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes at least two control electrodes, a plurality of semiconductor layers and an insulating film. Each control electrode extends in a first direction. The semiconductor layers are provided between the control electrodes, and arranged in the first direction. Each semiconductor layer extends in a second direction orthogonal to the first direction. The insulating film covers side surfaces of the semiconductor layers, and is disposed between the control electrodes. Each semiconductor layer has a side surface that includes at least one curved surface swelling in a direction from a center of the semiconductor layer to the insulating film. | 09-24-2015 |
20150340605 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment includes two electrodes and two semiconductor layers. The two electrodes extend in a first direction. The two semiconductor layers are placed between the two electrodes, are spaced from each other in the first direction, and extend in a second direction orthogonal to the first direction. The two electrodes include extending parts extending out so as to come close to each other. In a cross section orthogonal to the second direction, the extending parts extend into a region interposed between a pair of tangent lines. The pair of tangent lines tangent to both the two semiconductor layers and do not cross each other. | 11-26-2015 |
20150349252 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment includes an electrode extending in a first direction, two semiconductor members spaced from each other in the first direction and extending in a second direction crossing the first direction, an insulating film placed between each of the two semiconductor members and the electrode and made of a first insulating material, and a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material. | 12-03-2015 |
20150357379 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes two electrodes extending in a first direction, a semiconductor layer provided between the two electrodes, an insulating film disposed between the two electrodes. The two electrodes are arranged in a second direction intersecting the first direction. The semiconductor layer extends in a third direction orthogonal to the first direction and the second direction. The insulating film covers a side surface of the semiconductor layer opposite to one of the two electrodes. The semiconductor layer has a shape in a cross section perpendicular to the third direction such that a width in the first direction at a center of the cross section is narrower than a width, in the first direction, of the side surface. | 12-10-2015 |
Hikari Tochishita, Nagaokakyo-Shi JP
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20130342285 | VARIABLE CAPACITANCE ELEMENT AND TUNABLE FILTER - A variable capacitance element includes a piezoelectric substrate, a buffer layer located on the piezoelectric substrate with an orientation, a dielectric layer located on the buffer layer and having a relative dielectric constant that varies in accordance with an applied voltage, and a first electrode and a second electrode arranged to apply an electric field to the dielectric layer. | 12-26-2013 |