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Higashino, Tokyo
Hidehiro Higashino, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090199896 | Dye-sensitized solar cell - According to the present invention, a dye-sensitized solar cell includes a conductive substrate, which is transparent; and a photovoltaic (photoelectric exchange) layer formed on the conductive substrate. The photovoltaic layer comprises a lighter (brighter) region and a darker region therein. | 08-13-2009 |
Jiro Higashino, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100148309 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion. | 06-17-2010 |
| 20100155740 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer. | 06-24-2010 |
| 20110175105 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides. | 07-21-2011 |
Satoru Higashino, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090179707 | SIGNAL PROCESSING CIRCUIT, SIGNAL PROCESSING METHOD, AND PLAYBACK APPARATUS - A signal processing circuit includes a feedback control loop that includes a loop filter and that detects the difference between a target value and a control value to control the difference so that the difference has a predetermined value. A closed loop formed in the feedback control loop is expressed by the delay of the entire closed loop serving as the feedback control loop, the loop filter, and simple integration of a final stage. The signal processing circuit includes a moving average calculating unit configured to calculate a moving average of outputs from the loop filter; a multiplying unit configured to multiply a value calculated in the loop filter by a certain gain; and an integrating unit provided upstream of the loop filter so that calculation results by the moving average calculating unit and the multiplication unit are concurrently fed back to an input into the loop filter. | 07-16-2009 |
| 20100231195 | MEASUREMENT APPARATUS, REPRODUCTION APPARATUS, AND MEASUREMENT METHOD - A measurement apparatus includes a moving average calculation section and a convergence judgment section. The moving average calculation section calculates a moving average by inputting a phase error between a phase of an input signal and a target phase, that is detected by a phase-locked loop circuit. The convergence judgment section judges that the phase-locked loop circuit is not converged when an absolute value of the moving average is equal to or larger than a first threshold value and judges that the phase-locked loop circuit is converged when the absolute value of the moving average is smaller than the first threshold value. | 09-16-2010 |
Takaya Higashino, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110208470 | Operation verifying apparatus, operation verifying method and operation verifying system - An operation verifying apparatus of a first embodiment acquires a log indicating the content of a sequence of operations performed on a predetermined device, identifies corresponding functions from the log, and automatically generates a program based on the identified functions. Input data, which is to serve as an argument of each of these functions, is set. Execution sets as well as test scenarios are each structured by combining a program and input data. Then each execution set is continuously executed. As a result, an operation test using a test program is executed. | 08-25-2011 |
Tomoko Higashino, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090121337 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-14-2009 |
| 20090191667 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 07-30-2009 |
| 20100213594 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 08-26-2010 |
| 20110124180 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD COMPRISING A METAL PATTERN AND LASER MODIFIED REGIONS IN A CUTTING REGION - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-26-2011 |
Toshiyuki Higashino, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080315300 | Semiconductor device and method for manufacturing semiconductor device - A semiconductor device includes: a semiconductor substrate having a substrate surface; a spiral body constituted by a linear semiconductor layer on which a body region including a channel region, a first source/drain region disposed on the body region, and a second source/drain region disposed under the body region or in the semiconductor substrate around the linear semiconductor layer are formed, the linear semiconductor layer being formed on the substrate surface substantially in a spiral form viewed from the substrate surface in a plan view, formed substantially in a protrudent form in a cross-sectional view, and having a pair of sidewall portions; a gate insulating film formed on at least the pair of sidewall portions constituting the linear semiconductor layer; and a gate electrode that is adjacent to the pair of sidewall portions via the gate insulating film. | 12-25-2008 |
| 20090032849 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a cylindrical main pillar that is formed on a substrate and of which a central axis is perpendicular to the surface of the substrate, source and drain diffused layers that are formed in a concentric shape centered on the central axis at upper and lower portions of the main pillar and made from a first-conduction-type material, a body layer that is formed at an intermediate portion of the main pillar sandwiched between the source and drain diffused layers and made from the first-conduction-type material, and a front gate electrode that is formed on a lateral face of the main pillar while placing a gate insulating film therebetween. Moreover, a back gate electrode made from a second-conduction-type material is formed in a pillar shape penetrating from an upper portion to a lower portion on an inner side of the main pillar. | 02-05-2009 |
Yoshiyuki Higashino, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100164275 | MULTI-PIECE RIM AND ITS ATTACHING/REMOVING METHOD - It is an object of the present invention to provide a multi-piece rim which does not need much labor for supporting, and does not increase the number of components to be managed and the number of needed tasks. | 07-01-2010 |