| Patent application number | Description | Published |
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| 20090184724 | CHEMICAL IMPEDANCE DETECTORS FOR FLUID ANALYZERS - A chemical impedance detector having several electrodes situated on or across a dielectric layer of a substrate. The electrodes may be across or covered with a thin film polymer. Each electrode may have a set of finger-like electrodes. Each set of finger-like electrodes may be intermeshed, but not in contact, with another set of finger-like electrodes. The thin-film polymer may have a low dielectric constant and a high porous surface area. The chemical impedance detector may be incorporated in a micro fluid analyzer system. | 07-23-2009 |
| 20090212386 | MEMS DEVICE AND METHOD OF MAKING SAME - A MEMS device includes a P-N device formed on a silicon pin, which is connected to a silicon sub-assembly, and where the P-N device is formed on a silicon substrate that is used to make the silicon pin before it is embedded into a first glass wafer. In one embodiment, forming the P-N device includes selectively diffusing an impurity into the silicon pin and configuring the P-N device to operate as a temperature sensor. | 08-27-2009 |
| 20090237320 | TRANSDUCER FOR HIGH-FREQUENCY ANTENNA COUPLING AND RELATED APPARATUS AND METHOD - An apparatus includes an antenna having multiple conductive portions. The apparatus also includes a transducer electrically coupling the conductive portions of the antenna. The transducer includes a first conductive path electrically coupled to one of the conductive portions and a second conductive path electrically coupled to the first conductive path and to another of the conductive portions. The first and second conductive paths at least partially overlap along at least a substantial portion of their lengths, where the overlap occurs in a direction perpendicular to a plane of the antenna portions. | 09-24-2009 |
| 20100045159 | MICRO DISCHARGE DEVICE CAPABLE OF LOW VOLTAGE DISCHARGES IN A VARIETY OF CARRIER GASES FOR DETECTION AND/OR IONIZATION - A micro discharge device (MDD) capable of low voltage discharges in a variety of carrier gases for detection and/or ionization includes a sample introduction capillary having a first open end connected to a gas system and a second open end connected to a cylinder comprising a high dielectric constant material. A high voltage electrode can be placed in close proximity to the outer diameter of the cylinder and at a close linear distance to the second open end of the sample introduction capillary. A region can be formed inside the cylinder between the second end of the sample introduction capillary and the high voltage electrode wherein discharge can be located. An optical emission collector can be located through the flow manifold to a receiving location near the high voltage electrode within a region from inside the cylinder between the high voltage electrode and the manifold. | 02-25-2010 |
| 20100108891 | HIGH REFLECTANCE TERAHERTZ MIRROR AND RELATED METHOD - A method includes forming a plurality of mirror periods, stacking the mirror periods, and bonding the mirror periods together to form a high reflectance mirror. At least one of the mirror periods is formed by bonding a first semiconductor layer to a first side of a film layer (where the film layer is formed on a second semiconductor layer), forming an opening through the second semiconductor layer to expose the film layer, and cutting through the first semiconductor layer, the film layer, and the second semiconductor layer. The first semiconductor layer could include a high resistivity silicon wafer, the film layer could include an oxide film, and the second semiconductor layer could include a silicon wafer. The high resistivity silicon wafer could be approximately 110 μm thick, and the silicon wafer could be approximately 125 μm thick. The opening through the second semiconductor layer could be 1.25 cm to 1.75 cm in width. | 05-06-2010 |
| 20100239436 | A THERMAL PUMP - A thermal pump for moving a sample fluid to and through an analyzer. The pump may have a lack of moving mechanical parts when pumping except for check valves. The thermal pump may have in lieu of each mechanical check valve a thermal or fluid mechanism that effectively operates as a valve without mechanical parts. The present thermal pump may be fabricated with MEMS technology. The pump may be integrated into a concentrator and/or separator of a fluid analyzer chip. | 09-23-2010 |
| Patent application number | Description | Published |
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| 20090044620 | Shell flow sensor - A flow sensor system and a method for fabricating the same. A substrate is provided, comprising a detector wafer upon which a flow sensor is formed. One or more shells can then be configured upon the substrate whose walls form a flow channel. The flow channel is fabricated directly upon the substrate in a manner that allows the flow channel to couple heat transfer directly to the flow sensor in order to eliminate the need for two or more different types of sacrificial layers during the fabrication of the flow sensor upon the substrate and in which the shell(s) is coupled with fluidic measurement to provide for the flow sensor. | 02-19-2009 |
| 20090279172 | MICROELECTROMECHANICAL LAMELLAR GRATING - An optical instrument includes a grating. The grating includes a plurality of plates that form a single first plane. The instrument further includes a mirror surface positioned adjacent to the grating. The mirror surface is positioned in a second plane. In an embodiment, the mirror surface is made of a substrate, a silicon wafer positioned on the substrate, and a mirror etch pit surface on the silicon wafer. | 11-12-2009 |
| 20090283759 | MOS LOW POWER SENSOR WITH SACRIFICAL MEMBRANE - A metal oxide semiconductor (MOS) device includes a substrate, a lower sacrificial membrane adjacent to the substrate, an upper thin film structure adjacent to the lower membrane, and a MOS material deposited on the upper thin film structure. | 11-19-2009 |
| 20100140670 | INTEGRATION OF MEMS AND CMOS DEVICES ON A CHIP - A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer. | 06-10-2010 |
| 20110070401 | INTEGRAL TOPSIDE VACUUM PACKAGE - An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers. | 03-24-2011 |
