| Patent application number | Description | Published |
|---|
| 20090230391 | Resistance Storage Element and Method for Manufacturing the Same - A method for manufacturing a resistance storage element includes forming a lower electrode layer over a semiconductor substrate, forming a transition metal film over the lower electrode layer, forming an upper electrode layer over the transition metal film, and supplying oxygen contained in the lower electrode layer or the upper electrode layer to oxidize the transition metal film. | 09-17-2009 |
| 20090236581 | RESISTANCE MEMORY ELEMENT, METHOD OF MANUFACTURING RESISTANCE MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE - A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer. | 09-24-2009 |
| 20090257271 | RESISTANCE CHANGE ELEMENT AND METHOD OF MANUFACTURING THE SAME - In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a lower electrode (ground-side electrode) of the resistance change element is formed of a transition metal such as Ni, and an upper electrode (positive polarity-side electrode) is configured of a noble metal such as Pt. In addition, a transition metal oxide film between the lower electrode and the upper electrode is formed of an oxide film (NiOx film) of a transition metal that is of the same kind as the transition metal constituting the lower electrode, for example. | 10-15-2009 |
| 20100083487 | METHOD OF MANUFACTURING RESISTANCE CHANGE ELEMENT - In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film. | 04-08-2010 |
| 20100230655 | VARIABLE RESISTANCE DEVICE, METHOD FOR MANUFACTURING VARIABLE RESISTANCE DEVICE, AND SEMICONDUCTOR STORAGE DEVICE USING VARIABLE RESISTANCE DEVICE - A variable resistance device includes a first electrode including a transition metal nitride film, a second electrode including a precious metal or a precious metal oxide, and a transition metal oxide film interposed between the first and second electrodes. | 09-16-2010 |
| 20100252796 | RESISTANCE CHANGE ELEMENT AND METHOD OF MANUFACTURING THE SAME - In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element, the resistance change element is configured of a lower electrode made of a noble metal such as Pt, a transition metal film made of a transition metal such as Ni, a transition metal oxide film made of a transition metal oxide such as NiOx, and a lower electrode made of a noble metal such as Pt. | 10-07-2010 |
| 20110280064 | COMPOSITE RESISTANCE VARIABLE ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A composite resistance variable element includes a first resistance variable element in which a resistance value varies corresponding to a direction of inner magnetization, and a second resistance variable element connected in series to the first resistance variable element. A resistance value of the second resistance variable element varies corresponding to a magnitude of at least one of a voltage applied to the second resistance variable element and a current flowing through the second resistance variable element, irrespective of whether the voltage and the current are positive or negative. | 11-17-2011 |
